ON Semiconductor Amplifier Transistor P2N2907A PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Operating and Storage Junction Temperature Range 1 2 CASE 29–11, STYLE 17 TO–92 (TO–226AA) COLLECTOR 1 THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –60 — Vdc Collector–Base Breakdown Voltage (IC = –10 Adc, IE = 0) V(BR)CBO –60 — Vdc Emitter–Base Breakdown Voltage (IE = –10 Adc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) ICBO — — –0.01 –10 Emitter Cutoff Current (VEB = –3.0 Vdc) IEBO — –10 nAdc Collector Cutoff Current (VCE = –10 V) ICEO — –10 nAdc Base Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBEX — –50 nAdc OFF CHARACTERISTICS µAdc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 1 1 Publication Order Number: P2N2907A/D P2N2907A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max 75 100 100 100 50 — — — 300 — — — –0.4 –1.6 — — –1.3 –2.6 fT 200 — MHz Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF Input Capacitance (VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo — 30 pF ton — 50 ns td — 10 ns tr — 40 ns toff — 110 ns ts — 80 ns tf — 30 ns Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –10 Vdc) (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –150 mAdc, VCE = –10 Vdc)(1) (IC = –500 mAdc, VCE = –10 Vdc)(1) hFE — Collector–Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) Base–Emitter Saturation Voltage(1) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) Vdc Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(1), (2) (IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn–On Time Delay Time (VCC = –30 30 Vdc, Vd IC = –150 150 mAdc, Ad IB1 = –15 mAdc) (Figures 1 and 5) Rise Time Turn–Off Time Storage Time (VCC = –6.0 6 0 Vdc, Vd IC = –150 150 mAdc, Ad IB1 = IB2 = –15 mAdc) (Figure 2) Fall Time 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 50 -16 V INPUT Zo = 50 Ω PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns +15 V -6.0 V 1.0 k 1.0 k 0 -30 V 50 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 2 P2N2907A TYPICAL CHARACTERISTICS hFE , NORMALIZED CURRENT GAIN 3.0 VCE = -1.0 V VCE = -10 V 2.0 TJ = 125°C 25°C 1.0 -55°C 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25°C 200 t, TIME (ns) t, TIME (ns) 300 200 30 20 10 td @ VBE(off) = 0 V 7.0 5.0 3.0 -5.0 -7.0 -10 tf 100 70 50 30 t′s = ts - 1/8 tf 20 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C -200 -300 -500 Figure 5. Turn–On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn–Off Time http://onsemi.com 3 P2N2907A TYPICAL SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 Ω -500 µA, Rs = 560 Ω -50 µA, Rs = 2.7 kΩ -100 µA, Rs = 1.6 kΩ 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k f, FREQUENCY (kHz) Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects 20 C, CAPACITANCE (pF) IC = -50 µA -100 µA -500 µA -1.0 mA 4.0 0 100 30 Ceb 10 7.0 5.0 Ccb 3.0 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25°C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product +0.5 -1.0 V, VOLTAGE (VOLTS) -0.6 0 VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) TJ = 25°C -0.8 VBE(on) @ VCE = -10 V -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -0.5 -1.0 -1.5 RVB for VBE -2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 RVC for VCE(sat) -50 -100 -200 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://onsemi.com 4 P2N2907A PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 5 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- P2N2907A Notes http://onsemi.com 6 P2N2907A Notes http://onsemi.com 7 P2N2907A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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