ONSEMI NTMFS4709NT1G

NTMFS4709N
Power MOSFET
30 V, 94 A, Single N-Channel, SOIC-8 FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These are Pb-Free Devices
http://onsemi.com
V(BR)DSS
Applications
RDS(on) Typ
2.85 mW @ 10 V
30 V
•VCORE Applications
•DC-DC Converters
•Low Side Switching
94 A
4.0 mW @ 4.5 V
N-Channel
D
MAXIMUM RATINGS (TJ=25°C unless otherwise stated)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
±20
V
ID
18
A
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
Continuous Drain
Current RqJA
(Note 2)
TA = 25°C
Power Dissipation
RqJA (Note 2)
ID Max
TA = 85°C
Steady
State
G
S
13
PD
ID
TA = 85°C
2.35
W
11
MARKING DIAGRAM &
PIN ASSIGNMENT
A
D
8.0
TA = 25°C
PD
0.91
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
94
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
TC = 85°C
S
S
S
G
1
SOIC-8 FLAT LEAD
CASE 488AA
STYLE 1
D
4709N
AYWWG
G
D
D
68
PD
62.5
W
4709N
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb-Free Package
Pulsed Drain Cur‐
rent
TA = 25°C,
tp = 10 ms
IDM
140
A
Current limited by
package
TA = 25°C
IDmaxPkg
140
A
TJ,
TSTG
-55 to
+150
°C
IS
62.5
A
dV/dt
10
V/ns
Single Pulse Drain-to-Source Avalanche
Energy TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 30 Apk, L = 1.0 mH, RG = 25 W
EAS
450
mJ
NTMFS4709NT3G SOIC-8 FL 5000/T
ape & Reel
(Pb-Free)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Operating Junction and
Storage Temperature
Source Current (Body Diode)
Drain to Source
July, 2007 - Rev. 3
ORDERING INFORMATION
Device
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2007
(Note: Microdot may be in either location)
1
Package
Shipping†
NTMFS4709NT1G SOIC-8 FL 1500/T
ape & Reel
(Pb-Free)
Publication Order Number:
NTMFS4709N/D
NTMFS4709N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction-to-Case (Drain)
Rating
RqJC
2.0
°C/W
Junction-to-Ambient – Steady State (Note 3)
RqJA
53.2
Junction-to-Ambient – Steady State (Note 4)
RqJA
137.8
3. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/T
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
V
5.6
mV/°C
J
IDSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.0
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
1.0
5.6
VGS = 11.5 V
mV/°C
ID = 30 A
2.8
ID = 15 A
2.8
VGS = 10 V
ID = 30 A
2.85
3.6
VGS = 4.5 V
ID = 30 A
4.0
5.5
ID = 15 A
4.0
gFS
VDS = 15 V, ID = 15 A
41
mW
S
CHARGES AND CAPACITANCES
Input Capacitance
CISS
2370
VGS = 0 V, f = 1 MHz,
VDS = 12 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
305
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS = 4.5 V, VDS = 15 V;
ID = 30 A
1240
pF
2.4
4.5
nC
11
Total Gate Charge
QG(TOT)
48
Threshold Gate Charge
QG(TH)
4.0
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
10.6
td(ON)
16
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
6.5
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 30 A, RG = 3.0 W
tf
173
20
105
5. Pulse Test: pulse width "300 ms, duty cycle "2%
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
ns
NTMFS4709N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON)
tr
td(OFF)
8.5
VGS = 11.5 V, VDS = 15 V,
ID = 30 A, RG = 3.0 W
tf
87
ns
31.5
8.5
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.75
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.85
VGS = 0 V,
IS = 20 A
TJ = 125°C
0.7
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.0
V
48
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 25 A
QRR
23
ns
25
55
nC
0.65
W
Package Parasitic Values
Gate Resistance
RG
TA = 25°C
5. Pulse Test: pulse width "300 ms, duty cycle "2%
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTMFS4709N
60
VDS ≥ 10 V
TJ = 25°C
3.5 V
ID, DRAIN CURRENT (A)
4.5 V
50
ID, DRAIN CURRENT (A)
60
10 V
VGS = 3 V
40
30
20
2.6 V
10
50
40
30
TJ = 125°C
20
TJ = 25°C
10
2.2 V
0
2
4
6
8
0
10
2
3
4
5
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.006
VGS = 11.5 V
T = 150°C
0.005
T = 125°C
0.004
0.003
T = 25°C
0.002
T = -55°C
0.001
0
0
1
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
0
0.005
TJ = 25°C
VGS = 4.5 V
0.004
0.003
VGS = 11.5 V
0.002
0.001
0
0
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 3. On-Resistance versus Drain Current
and Temperature
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
100000
2
ID = 30 A
VGS = 10 V
VGS = 0 V
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
TJ = -55°C
0
1
0.5
0
-50
10000
TJ = 150°C
1000
TJ = 125°C
100
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
TJ, TEMPERATURE (°C)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
http://onsemi.com
4
30
NTMFS4709N
VGS, GATE-TO-SOURCE VOLTAGE (V)
4000
TJ = 25°C
C, CAPACITANCE (pF)
CISS
3000
CISS
2000
CRSS
COSS
1000
0
10
VGS = 0 V
VDS = 0 V
5
0
VGS
CRSS
5
10
15
20
12
QT
10
8
6
Qgs
4
2
ID = 30 A
TJ = 25°C
0
0
25
10
20
30
40
50
Qg, TOTAL GATE CHARGE (nC)
VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
Figure 7. Capacitance Variation
30
1000
VGS = 0 V
TJ = 25°C
IS, SOURCE CURRENT (A)
VDD = 15 V
ID = 30 A
VGS = 11.5 V
tr
td(off)
100
tf
10
td(on)
1
20
10
0
1
10
100
0
0.2
0.4
0.6
0.8
RG, GATE RESISTANCE (W)
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
EAS, SINGLE PULSE DRAIN-TO-SOURCE
AVALANCHE ENERGY (mJ)
t, TIME (ns)
Qgd
700
ID = 36 A
600
500
400
300
200
100
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
1
NTMFS4709N
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P (SO8 FL)
CASE 488AA-01
ISSUE C
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
6
2X
0.20 C
5
4X
E1
q
E
2
c
1
2
3
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
--0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
--4.22
6.15 BSC
5.50
5.80
6.10
3.45
--4.30
1.27 BSC
0.51
0.61
0.71
0.51
----0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
--12 _
0.10 C
SOLDERING FOOTPRINT*
SIDE VIEW
8X
DETAIL A
b
0.10
C A B
0.05
c
3X
4X
1.270
0.750
4X
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
e/2
L
1
4
K
1.000
0.965
1.330
2X
0.905
2X
0.495
E2
L1
6
G
M
4.530
3.200
0.475
5
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P
.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81-3-5773-3850
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTMFS4709N/D