SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE PARTMARKING DETAIL ts 60 40 0.2 200 tr 0 0.01 0.1 1 10 E FZT649 FZT749 C B ABSOLUTE MAXIMUM RATINGS. td 20 IC/IB=10 0.001 C tf 80 600 0.4 0 VCE=-10V 160 1.4 Switching time - (Volts) 1.6 0.01 0.1 IC - Collector Current (Amps) 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -8 A IC -3 A Ptot 2 W -55 to +150 °C Continuous Collector Current Power Dissipation 1.2 at Tamb=25°C Tj:Tstg Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 - (Volts) VCE=2V 160 120 IC/IB=10 0.8 0.6 h - Gain 200 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -35 V IC=-100µA V(BR)CEO -25 V IC=-10mA* V(BR)EBO -5 V IE=-100µA -0.1 -10 µA µA VCB=-30V VCB=-30V,Tamb=100°C IC/IB=100 V 80 40 0.001 0.01 0.1 1 0.4 0.001 10 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1 10 I - Collector Current (Amps) - (Volts) VCE=2V 0.8 V 0.6 0.4 0.001 0.01 0.1 1 1.0 -0.1 µA VEB=4V Saturation Voltages VCE(sat) -0.12 -0.40 -0.3 -0.6 V V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 70 100 75 15 200 200 150 50 Transition Frequency fT 100 160 1s 100ms 10ms 1.0ms IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* 300 MHz µs 100 10 0.01 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 233 ICBO D.C. 0.1 MAX. Collector Cut-Off Currents Single Pulse Test at Tamb=25°C 10 TYP. IEBO 1.2 1.0 FZT749 ISSUE 4 - NOVEMBER 1995 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). 100 Output Capacitance Cobo 55 Switching Times ton 40 100 pF VCB=-10V f=1MHz ns IC=-500mA, VCC=-10V IB1=IB2=-50mA toff 450 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 232 IC=-100mA, VCE=-5V f=100MHz SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE PARTMARKING DETAIL ts 60 40 0.2 200 tr 0 0.01 0.1 1 10 E FZT649 FZT749 C B ABSOLUTE MAXIMUM RATINGS. td 20 IC/IB=10 0.001 C tf 80 600 0.4 0 VCE=-10V 160 1.4 Switching time - (Volts) 1.6 0.01 0.1 IC - Collector Current (Amps) 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -8 A IC -3 A Ptot 2 W -55 to +150 °C Continuous Collector Current Power Dissipation 1.2 at Tamb=25°C Tj:Tstg Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). 1.0 - (Volts) VCE=2V 160 120 IC/IB=10 0.8 0.6 h - Gain 200 PARAMETER SYMBOL MIN. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -35 V IC=-100µA V(BR)CEO -25 V IC=-10mA* V(BR)EBO -5 V IE=-100µA -0.1 -10 µA µA VCB=-30V VCB=-30V,Tamb=100°C IC/IB=100 V 80 40 0.001 0.01 0.1 1 0.4 0.001 10 0.01 0.1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 1 10 I - Collector Current (Amps) - (Volts) VCE=2V 0.8 V 0.6 0.4 0.001 0.01 0.1 1 1.0 -0.1 µA VEB=4V Saturation Voltages VCE(sat) -0.12 -0.40 -0.3 -0.6 V V IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* VBE(sat) -0.9 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage VBE(on) -0.8 -1.0 V IC=-1A, VCE=-2V* Static Forward Current Transfer Ratio hFE 70 100 75 15 200 200 150 50 Transition Frequency fT 100 160 1s 100ms 10ms 1.0ms IC=-50mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* 300 MHz µs 100 10 0.01 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 233 ICBO D.C. 0.1 MAX. Collector Cut-Off Currents Single Pulse Test at Tamb=25°C 10 TYP. IEBO 1.2 1.0 FZT749 ISSUE 4 - NOVEMBER 1995 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed). 100 Output Capacitance Cobo 55 Switching Times ton 40 100 pF VCB=-10V f=1MHz ns IC=-500mA, VCC=-10V IB1=IB2=-50mA toff 450 ns *Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 232 IC=-100mA, VCE=-5V f=100MHz