Order this document by BU323Z/D SEMICONDUCTOR TECHNICAL DATA High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features: • Integrated High–Voltage Active Clamp • Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the – 40°C to +125°C Temperature Range • Clamping Energy Capability 100% Tested in a Live Ignition Circuit • High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range • Design Guarantees Operation in SOA at All Times • Offered in Plastic SOT–93/TO–218 Type or TO–220 Packages AUTOPROTECTED DARLINGTON 10 AMPERES 360 – 450 VOLTS CLAMP 150 WATTS 360 V CLAMP ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ CASE 340D–02 SOT–93/TO–218 TYPE MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 350 Vdc Collector–Emitter Voltage VEBO 6.0 Vdc Collector Current — Continuous — Peak IC ICM 10 20 Adc Base Current — Continuous — Peak IB IBM 3.0 6.0 Adc PD 150 1.0 Watts W/_C TJ, Tstg – 65 to + 175 _C Symbol Max Unit RθJC 1.0 _C/W TL 260 _C (TC = 25_C) Total Power Dissipation Derate above 25_C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 8 Motorola, Inc. 1996 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ BU323Z ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCLAMP 350 — 450 Vdc Collector–Emitter Cutoff Current (VCE = 200 V, IB = 0) ICEO — — 100 µAdc Emitter–Base Leakage Current (VEB = 6.0 Vdc, IC = 0) IEBO — — 50 mAdc — — — — 2.2 2.5 — — — — — — — — — — 1.6 1.8 1.8 2.1 1.7 1.1 1.3 — — 2.1 2.3 — — 2.5 150 500 — — — 3400 fT — — 2.0 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — — 200 pF Input Capacitance (VEB = 6.0 V) Cib — — 550 pF WCLAMP 200 — — mJ tfi — 625 — ns tsi — 10 30 µs tc — 1.7 — µs OFF CHARACTERISTICS (1) Collector–Emitter Clamping Voltage (IC = 7.0 A) (TC = – 40°C to +125°C) ON CHARACTERISTICS (1) Base–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 100 mAdc) (IC = 10 Adc, IB = 0.25 Adc) VBE(sat) Collector–Emitter Saturation Voltage (IC = 7.0 Adc, IB = 70 mAdc) VCE(sat) (TC = 125°C) (IC = 8.0 Adc, IB = 0.1 Adc) (TC = 125°C) (IC = 10 Adc, IB = 0.25 Adc) Base–Emitter On Voltage (IC = 5.0 Adc, VCE = 2.0 Vdc) (IC = 8.0 Adc, VCE = 2.0 Vdc) Vdc Vdc VBE(on) (TC = – 40°C to +125°C) Diode Forward Voltage Drop (IF = 10 Adc) VF DC Current Gain (IC = 6.5 Adc, VCE = 1.5 Vdc) (IC = 5.0 Adc, VCE = 4.6 Vdc) Vdc hFE (TC = – 40°C to +125°C) Vdc — DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) CLAMPING ENERGY (see notes) Repetitive Non–Destructive Energy Dissipated at turn–off: (IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4) SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) Fall Time Storage Time Cross–over Time (IC = 6.5 A, IB1 = 45 mA, VBE(off) ( ) = 0, RBE(off) ( ) = 0, VCC = 14 V, V VZ = 300 V) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%. 2 Motorola Bipolar Power Transistor Device Data BU323Z By design, the BU323Z has a built–in avalanche diode and a special high voltage driving circuit. During an auto–protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built–in zener and associated network, the I C = f(V CE ) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1. IC INOM = 6.5 A Output transistor turns on: IC = 40 mA High Voltage Circuit turns on: IC = 20 mA Avalanche diode turns on: IC = 100 µA 250 V 300 V 340 V Icer Leakage Current VCE VCLAMP NOMINAL = 400 V Figure 1. IC = f(VCE) Curve Shape MERCURY CONTACTS WETTED RELAY IC CURRENT SOURCE VCE MONITOR (VGATE) RBE = 100 Ω IB CURRENT SOURCE The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4. L INDUCTANCE (8 mH) 0.1 Ω NON INDUCTIVE IC MONITOR VBEoff IB2 SOURCE Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA, RBE = 100 Ω, Vgate = 280 V, L = 8.0 mH Figure 2. Basic Energy Test Circuit IC, COLLECTOR CURRENT (AMPS) 10 1 300 µs 1 ms TC = 25°C 10 ms 250 ms 0.1 THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.01 0.001 10 100 340 V VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1000 Figure 3. Forward Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 BU323Z IC The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/ RBE), without an external clamp; see the test schematic diagram, Figure 2. ICPEAK IC HIGH The transistor PASSES the Energy test if, for the inductive load and ICPEAK/IB/VBE(off) biases, the VCE remains outside the shaded area and greater than the VGATE minimum limit, Figure 4a. IC LOW VCE Figure 4a. VGATE MIN IC ICPEAK IC HIGH IC LOW VCE Figure 4b. VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if the VCE is less than the VGATE (minimum limit) at any point along the VCE/IC curve as shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the die, and the transistor is not damaged, thus enabling the sustained energy level required. IC LOW VCE Figure 4c. VGATE MIN IC ICPEAK IC HIGH The transistor FAILS if its Collector/Emitter breakdown voltage is less than the VGATE value, Figure 4d. IC LOW VCE Figure 4d. VGATE MIN Figure 4. Energy Test Criteria for BU323Z 4 Motorola Bipolar Power Transistor Device Data BU323Z 10000 10000 TJ = 125°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN TYPICAL 1000 –40°C 25°C 100 1000 TYP – 6Σ TYP + 6Σ 100 VCE = 5 V, TJ = 25°C VCE = 1.5 V 10 100 1000 IC, COLLECTOR CURRENT (MILLIAMPS) 10 100 10000 5.0 4.5 TJ = 25°C IC = 3 A 4.0 3.5 5A 3.0 8A 10 A 2.5 2.0 7A 1.5 1.0 0.5 0 1 10 IB, BASE CURRENT (MILLIAMPS) 100 2.4 VBE(on), BASE–EMITTER VOLTAGE (VOLTS) VBE, BASE–EMITTER VOLTAGE (VOLTS) IC/IB = 150 1.8 TJ = 25°C 1.4 125°C 1.0 0.8 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. Base–Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data TJ = 125°C 2.0 1.8 1.6 1.4 1.2 1.0 25°C 0.8 0.6 0.4 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 8. Collector–Emitter Saturation Voltage 2.0 1.2 IC/IB = 150 2.2 Figure 7. Collector Saturation Region 1.6 100000 Figure 6. DC Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 5. DC Current Gain 1000 10000 IC, COLLECTOR CURRENT (MILLIAMPS) 10 2.0 1.8 VCE = 2 VOLTS 1.6 1.4 TJ = 25°C 1.2 1.0 125°C 0.8 0.6 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 10. Base–Emitter “ON” Voltages 5 BU323Z PACKAGE DIMENSIONS C Q B U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. E 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H MILLIMETERS MIN MAX ––– 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF ––– 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF INCHES MIN MAX ––– 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF ––– 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 V STYLE 1: PIN 1. 2. 3. 4. G BASE COLLECTOR EMITTER COLLECTOR CASE 340D–02 SOT–93/TO–218 TYPE ISSUE B Motorola reserves the right to make changes without further notice to any products herein. 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How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 MFAX: [email protected] – TOUCHTONE 602–244–6609 INTERNET: http://Design–NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *BU323Z/D* Motorola Bipolar Power Transistor Device BU323Z/D Data