ONSEMI NCS2530DTB

NCS2530
Triple 1.1 mA 200 MHz
Current Feedback Op Amp
with Enable Feature
NCS2530 is a triple 1.1 mA 200 MHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
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MARKING
DIAGRAM
Features
•
•
•
•
•
•
•
•
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 200 MHz Typ
Slew Rate 450 V/ms
Supply Current 1.1 mA per amplifier
Input Referred Voltage Noise 4.0 nV/ ǸHz
THD −55 dB (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 100 mA
Enable Pin Available
These devices are manufactured with a Pb−Free external lead
finish only.**
16
NCS
2530
ALYW
TSSOP−16
DT SUFFIX
CASE 948F
1
2530
A
L
Y
W
= NCS2530
= Assembly Location
= Wafer Lot
= Year
= Work Week
Applications
•
•
•
•
•
Portable Video
Line Drivers
Radar/Communication Receivers
Set Top Box
NTSC/PAL/HDTV
3
NORMAILIZED GAIN(dB)
2
1
VS = ±5V
VOUT = 0.5V
Gain = +2
RF = 1.2kW
RL = 100W
0
TSSOP−16 PINOUT
VS = ±5V
VOUT = 0.7V
−2
−6
0.01
0.1
10
1
FREQUENCY (MHz)
+IN1
2
+
15 OUT1
VEE
3
−IN2
4
−
13 EN2
+IN2
5
+
12 OUT2
VEE
6
+IN3
7
+
8
−
Device
VS = ±2.5V
VOUT = 0.5V
−5
16 EN1
14 VCC
11
VCC
10 OUT3
9
EN3
ORDERING INFORMATION
VS = ±2.5V
VOUT = 0.7V
−4
−
(Top View)
VS = ±5V
VOUT = 2.0V
−3
1
−IN3
VS = ±2.5V
VOUT = 2.0V
−1
−IN1
100
1000
Package
Shipping†
NCS2530DTB
TSSOP−16*
96 Units/Rail
NCS2530DTBR2
TSSOP−16* 2500 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Figure 1. Frequency Response:
Gain (dB) vs. Frequency Av = +2.0, RL = 100 W
*This package is inherently Pb−Free.
** For additional information on our Pb−Free
strategy and soldering details, please download
the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
Publication Order Number:
NCS2530/D
NCS2530
PIN FUNCTION DESCRIPTION
Pin
Symbol
Function
10, 12, 15
OUTx
Output
Equivalent Circuit
VCC
ESD
OUT
VEE
3, 6
VEE
Negative Power Supply
2, 5, 7
+INx
Non−inverted Input
VCC
ESD
ESD
+IN
−IN
VEE
1, 4, 8
−INx
Inverted Input
See Above
11, 14
VCC
Positive Power Supply
9, 13, 16
EN
Enable
VCC
EN
ESD
VEE
ENABLE PIN TRUTH TABLE
Enable
High*
Low
Enabled
Disabled
*Default open state
VCC
+IN
OUT
−IN
CC
VEE
Figure 2. Simplified Device Schematic
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2
NCS2530
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
VDC
Input Voltage Range
VI
vVS
VDC
Input Differential Voltage Range
VID
vVS
VDC
Output Current
IO
100
mA
Maximum Junction Temperature (Note 3)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
RqJA
178
°C/W
Thermal Resistance, Junction−to−Air
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
1400
Maximum Power Dissapation (mW)
The maximum power that can be safely dissipated is limited
by the associated rise in junction temperature. For the plastic
packages, the maximum safe junction temperature is 150°C.
If the maximum is exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated’’ condition for
an extended period can result in device damage.
1200
1000
800
600
400
200
0
−50
−25
0
50
75
25
100
Ambient Temperature (°C)
125
Figure 3. Power Dissipation vs. Temperature
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3
150
NCS2530
AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
200
140
AV = +2.0
30
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.1
°
Slew Rate
AV = +2.0, Vstep = 2.0 V
450
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 2.0 V
AV = +2.0, Vstep = 2.0 V
35
18
(10%−90%) AV = +2.0, Vstep = 2.0 V
5
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
900
ns
tOFF
Turn−off Time
500
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p, RL = 150 W
−55
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−67
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−57
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 2.0 Vp−p
35
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 2.0 Vp−p
58
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
4
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
15
15
pAń ǸHz
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4
NCS2530
DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−4.0
"0.7
+4.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage
Temperature Coefficient
Input Bias Current
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 4)
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 4)
VIL
Input Low Voltage (Enable)
(Note 4)
mV/°C
6.0
−5.0
−5.0
"2.0
"0.4
+5.0
+5.0
"40
"10
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
mA
nA/°C
VCC−1.5V
V
VCC−3.5V
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 4)
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
(See Graph)
"3.0
"4.0
50
55
+Input (Non−Inverting)
−Input (Inverting)
V
65
dB
4.0
350
MW
W
1.0
pF
0.02
W
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Swing
"3.0
"3.5
V
IO
Output Current
"60
"100
mA
POWER SUPPLY
VS
Operating Voltage Supply
10
V
IS,ON
Power Supply Current −
Enabled (per amplifier)
VO = 0 V
0.6
1.1
2.0
mA
IS,OFF
Power Supply Current −
Disabled (per amplifier)
VO = 0 V
0.2
0.35
0.5
mA
Crosstalk
PSRR
Power Supply Rejection
Ratio
Channel to Channel, f = 5.0 MHz
(See Graph)
4. Guaranteed by design and/or characterization.
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5
60
50
60
dB
80
dB
NCS2530
AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 1.0 Vp−p
180
130
AV = +2.0
15
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.02
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.1
°
Slew Rate
AV = +2.0, Vstep = 1.0 V
350
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 1.0 V
AV = +2.0, Vstep = 1.0 V
40
18
(10%−90%) AV = +2.0, Vstep = 1.0 V
8.0
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
900
ns
tOFF
Turn−off Time
500
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p, RL = 150 W
−55
dBc
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−67
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−57
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 1.0 Vp−p
35
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 1.0 Vp−p
58
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
4.0
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
15
15
pAń ǸHz
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6
NCS2530
DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−4.0
"0.5
+4.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage
Temperature Coefficient
Input Bias Current
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 5)
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 5)
VIL
Input Low Voltage (Enable)
(Note 5)
mV/°C
6.0
−5.0
−5.0
"2.0
"0.4
+5.0
+5.0
"40
"10
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
mA
nA/°C
VCC−1.5V
V
VCC−3.5V
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 5)
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
(See Graph)
"1.3
"1.5
50
55
+Input (Non−Inverting)
−Input (Inverting)
V
65
dB
4.0
350
MW
W
1.0
pF
0.02
W
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Swing
"1.0
"1.4
V
IO
Output Current
"40
"80
mA
POWER SUPPLY
VS
Operating Voltage Supply
5.0
V
IS,ON
Power Supply Current −
Enabled (per amplifier)
VO = 0 V
0.5
0.9
1.9
mA
IS,OFF
Power Supply Current −
Disabled (per amplifier)
VO = 0 V
0.05
0.15
0.35
mA
Crosstalk
PSRR
Channel to Channel, f = 5.0 MHz
Power Supply Rejection
Ratio
(See Graph)
60
50
5. Guaranteed by design and/or characterization.
+
−
VIN
VOUT
RL
RF
RF
Figure 4. Typical Test Setup
(AV = +2.0, RF = 1.8 kW or 1.2 kW or 1.0 kW, RL = 100 W)
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7
60
mA
80
dB
NCS2530
3
6
NORMAILIZED GAIN(dB)
2
1
0
VS = ±2.5V
VOUT = 0.5V
VS = ±5V
VOUT = 0.5V
NORMALIZED GAIN (dB)
Gain = +2
RF = 1.2kW
RL = 100W
VS = ±2.5V
VOUT = 2.0V
−1
−2
VS = ±5V
VOUT = 2.0V
−3
VS = ±2.5V
VOUT = 0.7V
VS = ±2.5V
VOUT = 0.7V
−4
−5
−6
0.01
0.1
1
10
FREQUENCY (MHz)
Gain = +1
RF = 1.2kW
RL = 100W
3
−3
VS = ±5V
VOUT = 0.7V
−6
VS = ±2.5V
VOUT = 0.7V
−12
0.01
1000
Figure 5. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
0.10
1
10
FREQUENCY (MHz)
6
VS = ±5V
AV = +4
NORMAILIZED GAIN(dB)
NORMALIZED GAIN (dB)
VS = ±5V
VOUT = 1.0V
VS = ±2.5V
VOUT = 1.0V
0
VS = ±2.5V
AV = +2
−3
VS = ±5V
AV = +2
−6
VOUT = 2.0V
RL = 100W
−9
−12
0.01
0.10
VS = ±2.5V
AV = +4
1
10
FREQUENCY (MHz)
100
1000
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
Av = +1.0
6
3
VS = ±2.5V
VOUT = 0.5V
0
−9
100
VS = ±5V
VOUT = 0.5V
VS = ±5V
AV = +4
3
VS = ±2.5V
AV = +1
−3
VS = ±2.5V
AV = +4
−6
VOUT = 0.5V
RL = 100W
−12
0.01
1000
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5V
AV = +1
0
−9
100
VS = ±5V
AV = +2
0.10
VS = ±2.5V
AV = +4
10
1
FREQUENCY (MHz)
100
1000
Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
VS = ±5V
VS = ±5V
Figure 10. Large Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
Figure 9. Small Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
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8
NCS2530
−40
−40
VS = ±5V
VOUT = 2VPP
RL = 150W
−50
−55
THD
−60
HD3
−65
HD2
−70
VS = ±5V
f = 5MHz
RL = 150W
−45
DISTORTION (dB)
DISTORTION (dB)
−45
−50
THD
−55
HD3
−60
−65
HD2
−75
−70
−80
10
100
FREQUENCY (MHz)
0.5
1000
7
−20
6
−25
3
4
3.5
±2.5V
VS = ±5V
−30
5
4
±5.0V
3
−35
−40
−45
−50
2
−55
1
−60
0
−65
10k
1
10
100
FREQUENCY (kHz)
1000
Figure 13. Input Referred Noise vs. Frequency
0.06
−10
0.04
DIFFERENTIAL GAIN (%)
0
+5.0V
−30
−40
+2.5
−2.5V
1M
FREQUENCY (Hz)
10M
100M
0.02
VS = ±5V
RL = 150W
4.43MHz
3.58MHz
0
−0.02
−50
−5.0V
10MHz
−0.04
−60
−70
0.01
100k
Figure 14. CMRR vs. Frequency
−20
PSRR(dB)
2
2.5
VOUT (VPP)
Figure 12. THD, HD2, HD3 vs. Output Voltage
CMRR (dB)
VOLTAGE NOISE (nV/pHz)
Figure 11. THD, HD2, HD3 vs. Frequency
1.5
1
20MHz
0.1
1
FREQUENCY (MHz)
10
−0.06
−0.8
100
Figure 15. PSRR vs. Frequency
−0.6
0.2
0.4
−0.4 −0.2
0
OFFSET VOLTAGE (V)
Figure 16. Differential Gain
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9
0.6
0.8
NCS2530
0.06
1.4
10MHz
1.2
0.02
0
4.43MHz
−0.02
3.58MHz
VS = ±5V
RL = 150W
−0.6
25°C
1.1
1
0.9
−40°C
0.8
−0.04
−0.06
−0.8
85°C
1.3
CURRENT (mA)
DIFFERENTIAL PHASE (°)
20MHz
0.04
0.2
−0.4 −0.2
0
0.4
OFFSET VOLTAGE (V)
0.7
0.6
0.6
0.8
5
4
Figure 17. Differential Phase
6
8
7
9
POWER SUPPLY VOLTAGE (V)
10
11
Figure 18. Supply Current vs. Power Supply
vs. Temperature (Enabled)
.14
8
85°C
25°C
−40°C
.1
.08
.06
.04
7
OUTPUT VOLTAGE (VPP)
CURRENT (mA)
.12
85°C
5
−40°C
4
3
.02
0
2
4
5
7
9
6
8
POWER SUPPLY VOLTAGE (V)
10
11
5
4
6
8
7
9
SUPPLY VOLTAGE (V)
10
11
Figure 19. Supply Current vs. Power Supply
vs. Temperature (Disabled)
Figure 20. Output Voltage Swing vs. Supply Voltage
9
100
8
VS = ±5V
OUTPUT RESISTANCE (W)
OUTPUT VOLTAGE (VPP)
25°C
6
7
6
5
VS = ±2.5V
4
3
2
AV = +2
f = 1MHz
1
10
100
1000
LOAD RESISTANCE (W)
10
1
0.1
0.01
0.01
0
1
VS = ±5V
10k
Figure 21. Output Voltage Swing vs. Load
Resistance
0.1
1
10
FREQUENCY (MHz)
Figure 22. Output Impedance vs. Frequency
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10
100
NCS2530
10M
12
1M
TRANSIMPEDANCE (W)
18
GAIN (dB)
6
VS = ±5V
100k
0
100pF
−6
−12
47pF
VS = ±5V
RF = 1.2kW
RL = 100W
Gain= +2
−18
−24
1k
100
10pF
10
1
0.01
−30
1
10k
10
100
FREQUENCY (MHz)
1000
Figure 23. Frequency Response vs. CL
0.1
1
100
10
FREQUENCY (MHz)
1000
Figure 24. Transimpedance (ROL) vs. Frequency
VS = ±5V
EN
VS = ±5V
EN
OUT
OUT
Figure 25. Turn ON Time Delay
Vertical: 10 mV/Div, Horizontal: 4 ns/Div
(Output Signal: Square Wave, 10 MHz, 2 Vpp)
Figure 26. Turn OFF Time Delay
Vertical: 10 mV/Div, Horizontal: 4 ns/Div
(Output Signal: Square Wave, 10 MHz, 2 Vpp)
0
2
Gain = +2
VS = ±5V
1
NORMAILIZED GAIN(dB)
CROSSTALK (dB)
−10
−20
−30
Channel 1
−40
−50
Channel 3
−60
−70
10
10k
1000
3
0
1
−1
−2
−3
−4
−5
100
FREQUENCY (MHz)
2
−6
0.01
Gain = +2
VS = ±5V
0.1
1
10
FREQUENCY (MHz)
100
Figure 28. Channel Matching Gain (dB)
vs. Frequency
Figure 27. Crosstalk (dBc) vs. Frequency
(Crosstalk measured on Channel 2 with input signal
on Channel 1 and 3)
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11
1000
NCS2530
General Design Considerations
Printed Circuit Board Layout Techniques
The current feedback amplifier is optimized for use in high
performance video and data acquisition systems. For current
feedback architecture, its closed−loop bandwidth depends on
the value of the feedback resistor. The closed−loop bandwidth
is not a strong function of gain, as is for a voltage feedback
amplifier, as shown in Figure 29.
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances at
the output and inverting input nodes as it can effect peaking
and bandwidth. A space (3/16″ is plenty) should be left around
the signal lines to minimize coupling. Also, signal lines
connecting the feedback and gain resistors should be short
enough so that their associated inductance does not cause high
frequency gain errors. Line lengths less than 1/4″ are
recommended.
10
GAIN (dB)
5
RF = 1 kW
Video Performance
0
RF = 1.2 kW
−5
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and effectively
masks transmission line and other parasitic capacitances from
the amplifier output stage.
RF = 1.8 kW
−10
−15
AV = +2
VCC = +5 V
VEE = −5 V
−20
0.01
0.1
1.0
10
100
1000
ESD Protection
10000
All device pins have limited ESD protection using internal
diodes to power supplies as specified in the attributes table
(See Figure 30). These diodes provide moderate protection to
input overdrive voltages above the supplies. The ESD diodes
can support high input currents with current limiting series
resistors. Keep these resistor values as low as possible since
high values degrade both noise performance and frequency
response. Under closed−loop operation, the ESD diodes have
no effect on circuit performance. However, under certain
conditions the ESD diodes will be evident. If the device is
driven into a slewing condition, the ESD diodes will clamp
large differential voltages until the feedback loop restores
closed−loop operation. Also, if the device is powered down
and a large input signal is applied, the ESD diodes will
conduct.
Note: Human Body Model for +IN and –IN pins are rated
at 0.8 kV while all other pins are rated at 2.0 kV.
FREQUENCY (MHz)
Figure 29. Frequency Response vs. RF
The −3.0 dB bandwidth is, to some extent, dependent on the
power supply voltages. By using lower power supplies, the
bandwidth is reduced, because the internal capacitance
increases. Smaller values of feedback resistor can be used at
lower supply voltages, to compensate for this affect.
Feedback and Gain Resistor Selection for Optimum
Frequency Response
A current feedback operational amplifier’s key advantage
is the ability to maintain optimum frequency response
independent of gain by using appropriate values for the
feedback resistor. To obtain a very flat gain response, the
feedback resistor tolerance should be considered as well.
Resistor tolerance of 1% should be used for optimum flatness.
Normally, lowering RF resistor from its recommended value
will peak the frequency response and extend the bandwidth
while increasing the value of RF resistor will cause the
frequency response to roll off faster. Reducing the value of RF
resistor too far below its recommended value will cause
overshoot, ringing, and eventually oscillation.
Since each application is slightly different, it is worth some
experimentation to find the optimal RF for a given circuit. A
value of the feedback resistor that produces X0.1 dB of
peaking is the best compromise between stability and
maximal bandwidth. It is not recommended to use a current
feedback amplifier with the output shorted directly to the
inverting input.
VCC
External
Pin
Internal
Circuitry
VEE
Figure 30. Internal ESD Protection
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12
NCS2530
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE A
16X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
K
ÇÇÇ
ÉÉ
ÇÇÇ
ÉÉ
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
D
DETAIL E
G
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13
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0_
8_
NCS2530
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NCS2530/D