Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage VCEO –45 –25 Vdc Collector – Base Voltage VCBO –50 –30 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to +150 °C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Ambient Characteristic RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC307,B,C BC308C V(BR)CEO –45 –25 — — — — Vdc Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) BC307,B,C BC308C V(BR)EBO –5.0 –5.0 — — — — Vdc Collector–Emitter Leakage Current (VCES = –50 V, VBE = 0) (VCES = –30 V, VBE = 0) (VCES = –50 V, VBE = 0) TA = 125°C (VCES = –30 V, VBE = 0) TA = 125°C BC307,B,C BC308C BC307,B,C BC308C — — — — –0.2 –0.2 –0.2 –0.2 –15 –15 –4.0 –4.0 nAdc ICES µA REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Typ Max BC307B BC307C/308C — — 150 270 — — (IC = –2.0 mAdc, VCE = –5.0 Vdc) BC307 BC307B/308B BC307C/308C 120 200 420 — 290 500 800 460 800 (IC = –100 mAdc, VCE = –5.0 Vdc) BC307B BC307C/308C — — 180 300 — — — — — –0.10 –0.30 –0.25 –0.3 –0.6 — — — –0.7 –1.0 — — –0.55 –0.62 –0.7 — — 280 320 — — — — 6.0 Characteristic Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) — Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT BC307,B,C BC308C Common Base Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz) (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) Ccbo MHz NF pF dB BC307,B,C — 2.0 10 BC308C — 2.0 10 1. IC = –10 mAdc on the constant base current characteristic, which yields the point IC = –11 mAdc, VCE = –1.0 V. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data TYPICAL CHARACTERISTICS –1.0 VCE = –10 V TA = 25°C 1.5 –0.9 1.0 0.7 0.5 –0.7 VBE(on) @ VCE = –10 V –0.6 –0.5 –0.4 –0.3 VCE(sat) @ IC/IB = 10 –0.1 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 Figure 2. “Saturation” and “On” Voltages 10 400 300 Cib 7.0 200 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 –0.2 0.3 0.2 –0.2 VCE = –10 V TA = 25°C 150 100 80 60 5.0 TA = 25°C 3.0 Cob 2.0 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 IC, COLLECTOR CURRENT (mAdc) 1.0 –0.4 –0.6 –50 Figure 3. Current–Gain — Bandwidth Product 0.5 0.3 VCE = –10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 –0.1 –0.2 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –1.0 –2.0 –4.0 –6.0 –10 VR, REVERSE VOLTAGE (VOLTS) –20 –30 –40 Figure 4. Capacitances r b′, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 –10 Figure 5. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data 150 140 130 VCE = –10 V f = 1.0 kHz TA = 25°C 120 110 100 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –10 Figure 6. Base Spreading Resistance 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. 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