MOTOROLA BF224

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by BF224/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
3
BASE
2
EMITTER
MAXIMUM RATINGS
1
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
30
Vdc
Collector – Base Voltage
VCBO
45
Vdc
Emitter – Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
°C/W
Operating and Storage Junction
Temperature Range
2
3
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
30
—
—
45
—
—
4.0
—
—
—
—
100
—
—
100
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
Vdc
Vdc
Vdc
nAdc
nAdc
1
BF224
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
30
—
—
—
0.77
0.9
—
—
0.15
300
—
600
850
—
—
—
0.28
—
—
—
2.5
3.5
—
—
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 7.0 mAdc, VCE = 10 Vdc)
hFE
Base–Emitter On Voltage
(IC = 7.0 mAdc, VCE = 10 Vdc)
VBE(on)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
—
mVdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 1.5 mAdc, VCE = 10 Vdc, f = 100 MHz)
(IC = 7.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
Common Emitter Feedback Capacitance
(VCE = 10 Vdc, IE = 0, f = 1.0 MHz)
Noise Figure
(IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 100 MHz)
(IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 200 MHz)
2
fT
MHz
Cre
pF
Nf
dB
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1000
700
500
10
BF224
VCE = 10 V
TA = 25°C
300
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
BF224
200
100
2
Cib
1
0.7
0.5
0.4
0.3
20
Cob
Cre @ IE = 0
0.2
10
0.2 0.3 0.5 0.7 1
3 5
10
20
IC, COLLECTOR CURRENT (mA)
100
0.1
0.2
0.5
1
3 5
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Current–Gain — Bandwidth Product
Figure 2. Capacitances
100
VCE = 10 V
50
100 MHz
20
200
100
70
50
BF224
mmhos
hFE, DC CURRENT GAIN
VCE = 10 V
TA = 25°C
10
5
45 MHz
30
10.7 MHz
2
20
10
0.1
1
0.2 0.3 0.5 0.7 1
2 3 5 7 10
20
IC, COLLECTOR CURRENT (mA)
2
3
Figure 3. DC Current Gain
–100
b11e 470 kHz < 0.2 mmhos
4
5
6
7
8
IC, COLLECTOR CURRENT (mA)
Figure 4. b11e
2000
100 MHz
VCE = 10 V
–50
100 MHz
1000
–10
10.7 MHz
45 MHz
200
100
–5
10.7 MHz
50
–2
–1
500
45 MHz
–20
µmhos
mmhos
VCE = 10 V
2
3
b21e, at 470 kHz < 0.5 mmhos
4
5
6
7
8
IC, COLLECTOR CURRENT (mA)
Figure 5. b21e
Motorola Small–Signal Transistors, FETs and Diodes Device Data
20
470 kHz
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
Figure 6. b22e (boe)
3
BF224
10
VCE = 10 V
200
100 MHz
5
45 MHz
10.7 MHz
470 kHz
f = 0.47 to 45 MHz
50
mmhos
mmhos
2
1
20
10
0.5
5
0.2
0.1
VCE = 10 V
100
2
3
4
5
6
IC, COLLECTOR CURRENT (mA)
7
8
2
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
Figure 7. g11e (gie)
6
Figure 8. g21e (Yfe)
200
VCE = 10 V
100 MHz
100
50
45 MHz
µmhos
10.7 MHz
470 kHz
20
10
5
2
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
Figure 9. g22e (goe)
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
BF224
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
5
BF224
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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6
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*BF224/D*
BF224/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data