ONSEMI 74HC595DR2G

74HC595
8−Bit Serial−Input/Serial or
Parallel−Output Shift
Register with Latched
3−State Outputs
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High−Performance Silicon−Gate CMOS
The 74HC595 consists of an 8−bit shift register and an 8−bit D−type
latch with three−state parallel outputs. The shift register accepts serial
data and provides a serial output. The shift register also provides
parallel data to the 8−bit latch. The shift register and latch have
independent clock inputs. This device also has an asynchronous reset
for the shift register.
The HC595 directly interfaces with the SPI serial data port on
CMOS MPUs and MCUs.
MARKING
DIAGRAMS
16
SOIC−16
D SUFFIX
CASE 751B
16
1
HC595G
AWLYWW
1
16
Features
•
•
•
•
•
•
•
•
•
•
Output Drive Capability: 15 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 mA
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC
Standard No. 7A
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 328 FETs or 82 Equivalent Gates
Improvements over HC595
− Improved Propagation Delays
− 50% Lower Quiescent Power
− Improved Input Noise and Latchup Immunity
These are Pb−Free Devices
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 1
1
16
1
TSSOP−16
DT SUFFIX
CASE 948F
1
HC
595
ALYW HC595 = Device Code
A
= Assembly Location
L, WL
= Wafer Lot
Y, YY
= Year
W, WW = Work Week
G or = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
74HC595/D
74HC595
LOGIC DIAGRAM
PIN ASSIGNMENT
SERIAL
DATA
INPUT
A
14
15
1
2
QB
1
16
VCC
3
QC
2
15
QA
4
QD
3
14
A
QE
4
13
OUTPUT ENABLE
QF
5
12
LATCH CLOCK
QG
6
11
SHIFT CLOCK
QH
7
10
RESET
GND
8
9
SQH
SHIFT
REGISTER
LATCH
5
6
7
SHIFT 11
CLOCK
10
RESET
LATCH 12
CLOCK
OUTPUT 13
ENABLE
9
QA
QB
QC
QD
QE
QF
PARALLEL
DATA
OUTPUTS
QG
QH
SQH
SERIAL
DATA
OUTPUT
VCC = PIN 16
GND = PIN 8
ORDERING INFORMATION
Device
74HC595DR2G
74HC595DTR2G
Package
Shipping †
SOIC−16
(Pb−Free)
2500 Tape & Reel
TSSOP−16*
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
74HC595
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
– 0.5 to + 7.0
V
V
VCC
DC Supply Voltage (Referenced to GND)
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
±20
mA
Iout
DC Output Current, per Pin
±35
mA
ICC
DC Supply Current, VCC and GND Pins
±75
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(SOIC or TSSOP Package)
SOIC Package†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
C
260
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/C from 65 to 125C
TSSOP Package: − 6.1 mW/C from 65 to 125C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
C
0
0
0
1000
500
400
ns
DC Input Voltage, Output Voltage
(Referenced to GND)
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
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3
74HC595
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
VCC
(V)
Guaranteed Limit
– 55 to 25C
v 85C
v 125C
Unit
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum High−Level Output
Voltage, QA − QH
Vin = VIH or VIL
|Iout| v 20 mA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
3.0
4.5
6.0
2.98
3.98
5.48
2.34
3.84
5.34
2.2
3.7
5.2
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.4
0.4
0.4
Symbol
Parameter
Test Conditions
Vin = VIH or VIL
VOL
Maximum Low−Level Output
Voltage, QA − QH
Vin = VIH or VIL
|Iout| v 20 mA
Vin = VIH or VIL
VOH
Minimum High−Level Output
Voltage, SQH
Maximum Low−Level Output
Voltage, SQH
|Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
Vin = VIH or VIL
IIoutI v 20 mA
Vin = VIH or VIL
VOL
|Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
|Iout| v 2.4 mA
IIoutI v 4.0 mA
IIoutIv 5.2 mA
Vin = VIH or VIL
IIoutI v 20 mA
Vin = VIH or VIL
|Iout| v 2.4 mA
IIoutI v 4.0 mA
IIoutIv 5.2 mA
V
V
V
Iin
Maximum Input Leakage
Current
Vin = VCC or GND
6.0
±0.1
±1.0
±1.0
mA
IOZ
Maximum Three−State
Leakage
Current, QA − QH
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
±0.25
±2.5
±2.5
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
lout = 0 mA
6.0
4.0
40
40
mA
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book
(DL129/D).
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4
74HC595
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
VCC
(V)
Guaranteed Limit
– 55 to 25C
v 85C
v 125C
Unit
fmax
Maximum Clock Frequency (50% Duty Cycle)
(Figures 1 and 7)
2.0
3.0
4.5
6.0
6.0
15
30
35
4.8
10
24
28
4.0
8.0
20
24
MHz
tPLH,
tPHL
Maximum Propagation Delay, Shift Clock to SQH
(Figures 1 and 7)
2.0
3.0
4.5
6.0
140
100
28
24
175
125
35
30
210
150
42
36
ns
tPHL
Maximum Propagation Delay, Reset to SQH
(Figures 2 and 7)
2.0
3.0
4.5
6.0
145
100
29
25
180
125
36
31
220
150
44
38
ns
tPLH,
tPHL
Maximum Propagation Delay, Latch Clock to QA − QH
(Figures 3 and 7)
2.0
3.0
4.5
6.0
140
100
28
24
175
125
35
30
210
150
42
36
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to QA − QH
(Figures 4 and 8)
2.0
3.0
4.5
6.0
150
100
30
26
190
125
38
33
225
150
45
38
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to QA − QH
(Figures 4 and 8)
2.0
3.0
4.5
6.0
135
90
27
23
170
110
34
29
205
130
41
35
ns
tTLH,
tTHL
Maximum Output Transition Time, QA − QH
(Figures 3 and 7)
2.0
3.0
4.5
6.0
60
23
12
10
75
27
15
13
90
31
18
15
ns
tTLH,
tTHL
Maximum Output Transition Time, SQH
(Figures 1 and 7)
2.0
3.0
4.5
6.0
75
27
15
13
95
32
19
16
110
36
22
19
ns
Symbol
Parameter
Cin
Maximum Input Capacitance
−
10
10
10
pF
Cout
Maximum Three−State Output Capacitance (Output in
High−Impedance State), QA − QH
−
15
15
15
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
300
Power Dissipation Capacitance (Per Package)*
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2 f + ICC VCC . For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
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5
74HC595
TIMING REQUIREMENTS (Input tr = tf = 6.0 ns)
Symbol
Parameter
Guaranteed Limit
VCC
(V)
25C to –55C
v 85C
v 125C
Unit
tsu
Minimum Setup Time, Serial Data Input A to Shift Clock
(Figure 5)
2.0
3.0
4.5
6.0
50
40
10
9.0
65
50
13
11
75
60
15
13
ns
tsu
Minimum Setup Time, Shift Clock to Latch Clock
(Figure 6)
2.0
3.0
4.5
6.0
75
60
15
13
95
70
19
16
110
80
22
19
ns
th
Minimum Hold Time, Shift Clock to Serial Data Input A
(Figure 5)
2.0
3.0
4.5
6.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
ns
trec
Minimum Recovery Time, Reset Inactive to Shift Clock
(Figure 2)
2.0
3.0
4.5
6.0
50
40
10
9.0
65
50
13
11
75
60
15
13
ns
tw
Minimum Pulse Width, Reset
(Figure 2)
2.0
3.0
4.5
6.0
60
45
12
10
75
60
15
13
90
70
18
15
ns
tw
Minimum Pulse Width, Shift Clock
(Figure 1)
2.0
3.0
4.5
6.0
50
40
10
9.0
65
50
13
11
75
60
15
13
ns
tw
Minimum Pulse Width, Latch Clock
(Figure 6)
2.0
3.0
4.5
6.0
50
40
10
9.0
65
50
13
11
75
60
15
13
ns
tr, tf
Maximum Input Rise and Fall Times
(Figure 1)
2.0
3.0
4.5
6.0
1000
800
500
400
1000
800
500
400
1000
800
500
400
ns
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6
74HC595
FUNCTION TABLE
Inputs
Resulting Function
Reset
Serial
Input
A
Reset shift register
L
X
X
L, H, ↓
L
L
U
L
U
Shift data into shift
register
H
D
↑
L, H, ↓
L
D→SRA;
SRN→SRN+1
U
SRG→SRH
U
Shift register remains
unchanged
H
X
L, H, ↓
L, H, ↓
L
U
U
U
U
Transfer shift register
contents to latch
register
H
X
L, H, ↓
↑
L
U
SRN→LRN
U
SRN
Latch register remains
unchanged
X
X
X
L, H, ↓
L
*
U
*
U
Enable parallel outputs
X
X
X
X
L
*
**
*
Enabled
Force outputs into high
impedance state
X
X
X
X
H
*
**
*
Z
Operation
SR = shift register contents
LR = latch register contents
Shift
Clock
Latch
Clock
D = data (L, H) logic level
U = remains unchanged
Output
Enable
Shift
Register
Contents
Latch
Register
Contents
Serial
Output
SQH
Parallel
Outputs
QA − QH
↑ = Low−to−High
↓ = High−to−Low
* = depends on Reset and Shift Clock inputs
** = depends on Latch Clock input
PIN DESCRIPTIONS
INPUTS
A (Pin 14)
Output Enable (Pin 13)
Active−low Output Enable. A low on this input allows the
data from the latches to be presented at the outputs. A high
on this input forces the outputs (QA−QH) into the
high−impedance state. The serial output is not affected by
this control unit.
Serial Data Input. The data on this pin is shifted into the
8−bit serial shift register.
CONTROL INPUTS
Shift Clock (Pin 11)
Shift Register Clock Input. A low− to−high transition on
this input causes the data at the Serial Input pin to be shifted
into the 8−bit shift register.
OUTPUTS
QA − QH (Pins 15, 1, 2, 3, 4, 5, 6, 7)
Reset (Pin 10)
SQH (Pin 9)
Noninverted, 3−state, latch outputs.
Active−low, Asynchronous, Shift Register Reset Input. A
low on this pin resets the shift register portion of this device
only. The 8−bit latch is not affected.
Noninverted, Serial Data Output. This is the output of the
eighth stage of the 8−bit shift register. This output does not
have three−state capability.
Latch Clock (Pin 12)
Storage Latch Clock Input. A low−to−high transition on
this input latches the shift register data.
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7
74HC595
SWITCHING WAVEFORMS
tr
SHIFT
CLOCK
tw
tf
VCC
90%
50%
10%
tw
GND
OUTPUT
SQH
50%
OUTPUT
SQH
tPHL
90%
50%
10%
tTLH
GND
tPHL
1/fmax
tPLH
trec
SHIFT
CLOCK
tTHL
50%
OUTPUT
ENABLE
GND
tPHL
OUTPUT Q
VCC
50%
tPZL
OUTPUT Q
tTHL
50%
SHIFT
CLOCK
VCC
50%
SWITCH
CLOCK
HIGH
IMPEDANCE
10%
VOL
90%
VOH
HIGH
IMPEDANCE
Figure 4.
VALID
tsu
tPHZ
50%
Figure 3.
SERIAL
INPUT A
GND
tPLZ
tPZH
90%
QA−QH 50%
OUTPUTS 10%
tTLH
GND
Figure 2.
VCC
tPLH
VCC
50%
Figure 1.
LATCH
CLOCK
VCC
50%
RESET
LATCH
CLOCK
VCC
50%
GND
tsu
GND
th
VCC
50%
VCC
50%
GND
tw
GND
Figure 6.
Figure 5.
TEST CIRCUITS
TEST POINT
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
C L*
*Includes all probe and jig capacitance
1 kW
C L*
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
*Includes all probe and jig capacitance
Figure 7.
Figure 8.
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8
74HC595
EXPANDED LOGIC DIAGRAM
OUTPUT
ENABLE
13
LATCH
CLOCK
12
SERIAL
DATA
INPUT A
14
D
Q
D
SRA
Q
15
QA
LRA
R
Q
D
D
SRB
Q
1
QB
LRB
R
Q
D
D
SRC
Q
2
QC
LRC
R
Q
D
D
SRD
Q
3
QD
LRD
PARALLEL
DATA
OUTPUTS
R
Q
D
D
SRE
Q
4
QE
LRE
R
Q
D
D
SRF
Q
5
QF
LRF
R
Q
D
D
SRG
Q
6
QG
LRG
R
SHIFT
CLOCK
11
Q
D
D
SRH
Q
7
QH
LRH
R
RESET
10
9
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9
SERIAL
DATA
OUTPUT SQH
74HC595
TIMING DIAGRAM
SHIFT
CLOCK
SERIAL DATA
INPUT A
RESET
LATCH
CLOCK
OUTPUT
ENABLE
QA
QB
QC
QD
QE
QF
QG
QH
SERIAL DATA
OUTPUT SQH
NOTE:
implies that the output is in a high−impedance
state.
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10
74HC595
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
−A−
16
9
1
8
−B−
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
8 PL
0.25 (0.010)
B
M
S
G
R
K
F
X 45 C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
SOLDERING FOOTPRINT*
8X
6.40
16X
1
1.12
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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11
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0
7
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0
7
0.229
0.244
0.010
0.019
74HC595
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F−01
ISSUE B
16X K REF
0.10 (0.004)
0.15 (0.006) T U
T U
M
S
V
S
K
ÇÇÇ
ÉÉÉ
ÇÇÇ
ÉÉÉ
ÇÇÇ
S
K1
2X
L/2
16
9
J1
B
−U−
L
SECTION N−N
J
PIN 1
IDENT.
N
8
1
0.25 (0.010)
M
0.15 (0.006) T U
S
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
D
H
G
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
16X
0.36
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
12
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0
8
INCHES
MIN
MAX
0.193 0.200
0.169 0.177
−−− 0.047
0.002 0.006
0.020 0.030
0.026 BSC
0.007
0.011
0.004 0.008
0.004 0.006
0.007 0.012
0.007 0.010
0.252 BSC
0
8
74HC595
ON Semiconductor and
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13
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74HC595/D