SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A • Ultra Low Gate Charge ( Typ.Qg =115nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant D G G D S TO-247 S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current Ratings 600 Units V ±30 V -Continuous (TC = 25oC) 47 -Continuous (TC = 100oC) 29.7 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 15.7 A EAR Repetitive Avalanche Energy 3.7 mJ 100 V/ns 20 V/ns dv/dt - Pulsed A 141 A (Note 2) 3068 mJ MOSFET dv/dt Ruggedness Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) 368 W - Derate above 25oC 2.94 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 0.34 RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient ©2010 Fairchild Semiconductor Corporation FCH47N60N Rev. C1 Units o C/W 40 1 www.fairchildsemi.com FCH47N60N 600V N-Channel MOSFET December 2011 Device Marking FCH47N60N Device FCH47N60N Package TO-247 Reel Size - Tape Width - Quantity 30 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.78 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 1mA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 VDS = 480V, VGS = 0V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 2 ID = 1mA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA - 4 V Static Drain to Source On Resistance VGS = 10V, ID = 23.5A 51.5 62.0 mΩ gFS Forward Transconductance VDS = 40V, ID = 23.5A 56 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz Cosseff. Effective Output Capacitance VDS = 0V to 380V, VGS = 0V Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, ID = 23.5A, VGS = 10V (Note 4) Drain Open - 5037 6700 pF - 200 270 pF - 2.5 4.0 pF - 108 - 511 - 115 - 21 nC - 34 nC - 0.9 Ω - 11 32 ns - 9 28 ns - 135 280 ns - 22 54 ns pF pF 151 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 23.5A RGEN = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 47 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 141 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 23.5A - - 1.2 V trr Reverse Recovery Time - 495 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 23.5A dIF/dt = 100A/μs - 12 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 15.7A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 47A, di/dt ≤ 200A/μs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCH47N60N Rev. C1 2 www.fairchildsemi.com FCH47N60N 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 500 VGS = 15V 10V 8V 6V 5V 100 ID, Drain Current[A] ID, Drain Current[A] 100 10 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 1 0.1 1 10 VDS, Drain-Source Voltage[V] 1 30 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 6 VGS, Gate-Source Voltage[V] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 400 140 120 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 2 100 VGS = 10V 80 VGS = 20V 60 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 1 0.4 40 0 40 80 120 ID, Drain Current [A] 160 Figure 5. Capacitance Characteristics 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 1.4 Figure 6. Gate Charge Characteristics 5 10 10 VGS, Gate-Source Voltage [V] Coss 4 Capacitances [pF] 10 Ciss 3 10 Crss 2 10 *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 FCH47N60N Rev. C1 1 10 100 VDS, Drain-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 23.5A 0 600 3 0 30 60 90 Qg, Total Gate Charge [nC] 120 www.fairchildsemi.com FCH47N60N 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 23.5A 0.5 0.0 -100 200 Figure 9. Maximum Safe Operating Area -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 50 1000 100 40 10μs ID, Drain Current [A] ID, Drain Current [A] 2.5 100μs 10 1ms 10ms DC Operation in This Area is Limited by RDS(on) 1 *Notes: o 20 10 1. TC = 25 C 0.1 30 o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.05 0.01 t1 t2 0.02 *Notes: 0.01 Single pulse 0.001 -5 10 FCH47N60N Rev. C1 PDM 0.1 o 1. ZθJC(t) = 0.24 C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FCH47N60N 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCH47N60N 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCH47N60N Rev. C1 5 www.fairchildsemi.com FCH47N60N 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FCH47N60N Rev. C1 6 www.fairchildsemi.com FCH47N60N 600V N-Channel MOSFET Mechanical Dimensions TO-247 FCH47N60N Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FCH47N60N Rev. C1 8 www.fairchildsemi.com FCH47N60N 600V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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