CJD112 NPN CJD117 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJC ΘJA ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEO VCE=50V ICEV VCE=80V, VBE(off)=1.5V ICEV VCE=80V, VBE(off)=1.5V, TC=125°C ICBO VCB=80V ICBO VCB=100V IEBO VEB=5.0V BVCEO IC=30mA VCE(SAT) IC=2.0A, IB=8.0mA VCE(SAT) IC=4.0A, IB=40mA VBE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=2.0A hFE VCE=3.0V, IC=0.5A 500 hFE VCE=3.0V, IC=2.0A 1000 hFE VCE=3.0V, IC=4.0A 200 fT VCE=10V, IC=750mA, f=1.0MHz 25 Cob VCB=10V, IE=0, f=0.1MHz (CJD112) Cob VCB=10V, IE=0, f=0.1MHz (CJD117) 100 100 5.0 2.0 4.0 50 20 1.75 -65 to +150 6.25 71.4 UNITS V V V A A mA W W °C °C/W °C/W MAX 20 10 500 10 20 2.0 100 2.0 3.0 4.0 2.8 UNITS µA µA µA µA µA mA V V V V V 12000 100 200 MHz pF pF R2 (4-January 2010) CJD112 NPN CJD117 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m