CJD41C NPN CJD42C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD41C, CJD42C types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a surface mount package designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER DPAK TRANSISTOR CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TA=25°C) Operating and Storage Junction Temperature SYMBOL UNITS VCBO VCEO 100 V 100 V VEBO IC 5.0 V 6.0 A ICM IB 10 A PD PD 2.0 A 20 W 1.75 W -65 to +150 °C Thermal Resistance TJ, Tstg ΘJC 6.25 °C/W Thermal Resistance ΘJA 71.4 °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICEO VCE=60V 50 µA ICES VCE=100V 10 µA IEBO VEB=5.0V 500 µA BVCEO IC=30mA IC=6.0A, IB=600mA VCE(SAT) VBE(ON) hFE hFE VCE=4.0V, IC=6.0A VCE=4.0V, IC=300mA 100 V 1.5 V 2.0 V 30 fT VCE=4.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz 15 3.0 hfe VCE=10V, IC=500mA, f=1.0kHz 20 75 MHz R2 (4-January 2010) CJD41C NPN CJD42C PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) w w w. c e n t r a l s e m i . c o m