FAIRCHILD FDPF15N65YDTU

FDPF15N65
N-Channel UniFETTM MOSFET
650 V, 15 A, 440 m
Features
Description
• RDS(on) = 440 m (Max.) @ VGS = 10 V, ID = 7.5 A
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• Low Gate Charge (Typ. 48.5 nC)
• Low Crss (Typ. 23.6 pF)
• 100% Avalanche Tested
Applications
• LCD/LED/PDP TV and Monitor
• Uninterruptible Power Supply
D
G
G
D
TO-220F
S
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
(Note 1)
FDPF15N65
Unit
650
V
15*
9.5*
A
A
60*
A
 30
V
637
mJ
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
15
A
EAR
Repetitive Avalanche Energy
(Note 1)
25.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(TC = 25C)
- Derate above 25C
4.5
V/ns
38.5
0.3
W
W/C
-55 to +150
C
300
C
* Drain current limited by maximum junction termperature.

Thermal Characteristics
Symbol
Parameter
FDPF15N65
RJC
Thermal Resistance, Junction-to-Case, Max.
3.3
RJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
1
Unit
C/W
www.fairchildsemi.com
FDPF15N65 N-Channel UniFETTM MOSFET
March 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF15N65
FDPF15N65
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A, TJ = 25C
650
--
--
V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
ID = 250A, Referenced to 25C
--
0.65
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
VDS = 520V, TC = 125C
---
---
1
10
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 7.5A
--
0.36
0.44

gFS
Forward Transconductance
VDS = 40V, ID = 7.5A
--
19.2
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
2380
3095
pF
--
295
385
pF
--
23.6
35.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 325V, ID = 15A
RG = 21.7
(Note 4)
VDS = 520V, ID = 15A
VGS = 10V
(Note 4)
--
65
140
ns
--
125
260
ns
--
105
220
ns
--
65
140
ns
--
48.5
63.0
nC
--
14.0
--
nC
--
21.2
--
nC
--
--
15
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
60
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 15A
--
--
1.4
V
trr
Reverse Recovery Time
496
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 15A
dIF/dt =100A/s
--
Qrr
--
5.69
--
C
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.23mH, IAS = 15A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD  15A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
2
www.fairchildsemi.com
FDPF15N65 N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
ID, Drain Current [A]
1
10
ID, Drain Current [A]
Top :
0
10
1
10
o
150 C
o
25 C
o
-55 C
* Notes :
1. VDS = 40V
* Notes :
1. 250s Pulse Test
o
2. 250s Pulse Test
2. TC = 25 C
0
10
-1
10
-1
0
10
2
1
10
10
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
IDR, Reverse Drain Current [A]
RDS(ON) [],
Drain-Source On-Resistance
1.0
0.8
0.6
VGS = 10V
0.4
VGS = 20V
0.2
o
1
10
o
150 C
o
25 C
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25 C
0.0
0
0
10
20
30
40
10
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
5000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Ciss
3000
2000
1000
VDS = 130V
10
Crss = Cgd
Coss
VGS, Gate-Source Voltage [V]
Capacitances [pF]
4000
* Note ;
1. VGS = 0 V
Crss
2. f = 1 MHz
VDS = 325V
VDS = 520V
8
6
4
2
* Note : ID = 15A
0
-1
10
0
10
0
1
10
VDS, Drain-Source Voltage [V]
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FDPF15N65 N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
3.0
RDS(ON), (Normalized)
RDS(ON), (Normalized)
Drain-Source
On-Resistance
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 A
0.8
-100
-50
0
50
100
150
2.5
2.5
2.0
2.0
1.5
1.5
1.0
1.0
* Notes :
* Notes
1. VGS: = 10 V
1.2.VIGS==5.5
10 V
A
D
2. ID = 7.5 A
0.5
0.5
0.0
0.0
-100
-100
200
-50
-50
00
o
TJ, Junction Temperature [ C]
50
50
100
100
150
150
200
200
o
JunctionTemperature
Temperature [[oC]
C]
TTJJ,,Junction
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
18
2
10
15
100 s
1
10
ID, Drain Current [A]
ID, Drain Current [A]
10 s
1 ms
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
0
10
DC
-1
* Notes :
o
1. TC = 25 C
10
12
9
6
3
o
2. TJ = 150 C
3. Single Pulse
0
25
-2
10
0
10
1
2
10
3
10
10
50
75
100
125
150
o
TC, Case Temperature [ C]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
0
0 .2
0 .1
0 .0 5
10
-1
PDM
t1
0 .0 2
0 .0 1
* N o te s :
t2
1 . Z  J C ( t) = 3 .3
JC
(t), Thermal Response
D = 0 .5
10
o
C /W M a x .
Z
2 . D u ty F a c to r , D = t 1 /t 2
10
-2
10
3 . T J M - T C = P D M * Z  J C ( t)
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
4
www.fairchildsemi.com
FDPF15N65 N-Channel UniFETTM MOSFET
Typical Performance Characteristics (Continued)
FDPF15N65 N-Channel UniFETTM MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
5
www.fairchildsemi.com
FDPF15N65 N-Channel UniFETTM MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
6
www.fairchildsemi.com
FDPF15N65 N-Channel UniFETTM MOSFET
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2006 Fairchild Semiconductor Corporation
FDPF15N65 Rev. C0
8
www.fairchildsemi.com
FDPF15N65 N-Channel UniFETTM MOSFET
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