FAIRCHILD FDS2070N3

FDS2070N3
150V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V
Applications
• High power and current handling capability
• Synchronous rectifier
• Fast switching, low gate charge (38nC typical)
RDS(ON) = 88 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
5
Absolute Maximum Ratings
Symbol
Bottom-side
Drain Contact
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
150
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
4.1
A
– Continuous
(Note 1a)
– Pulsed
30
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
3.0
(Note 1b)
1.8
W
–55 to +150
°C
(Note 1a)
40
°C/W
(Note 1)
0.5
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS2070N3
FDS2070N3
13’’
12mm
2500 units
2002 Fairchild Semiconductor International
FDS2070N3 Rev B1(W)
FDS2070N3
May 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD = 75 V, ID= 4.1 A
370
mJ
4.1
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
ID = 250 µA
150
ID = 250 µA, Referenced to 25°C
V
154
mV/°C
Zero Gate Voltage Drain Current
VDS = 120 V, VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, VDS = 0 V
–100
nA
On Characteristics
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
2
VGS = 10 V, ID = 4.1 A
VGS = 6.0V, ID = 3.8 A
VGS = 10 V, ID = 4.1 A,TJ = 125°C
VDS = 10 V, ID = 4.1 A
2.6
–7
58
61
112
24
4
V
mV/°C
78
88
160
mΩ
S
Dynamic Characteristics
VDS = 75 V, V GS = 0 V,
f = 1.0 MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
1884
pF
102
pF
35
pF
VGS = 15 mV, f = 1.0 MHz
1.6
Ω
VDD = 75 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
10
20
ns
ns
(Note 2)
Turn–On Delay Time
tr
Turn–On Rise Time
6
12
td(off)
Turn–Off Delay Time
40
64
ns
tf
Turn–Off Fall Time
20
36
ns
38
53
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 75 V, ID = 4.1 A,
VGS = 10 V
nC
8
nC
11
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.5 A
Voltage
Diode Reverse Recovery Time
IF = 4.1A
Diode Reverse Recovery Charge diF/dt = 100 A/µs
0.75
(Note 2)
(Note 2)
2.5
1.2
A
V
75
nS
404
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2070N3 Rev B1(W)
FDS2070N3
Electrical Characteristics
FDS2070N3
Dimensional Outline and Pad Layout
FDS2070N3 Rev B1(W)
FDS2070N3
Typical Characteristics
1.6
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
6.0V
30
4.5V
20
4.0V
10
VGS = 4.0V
1.4
4.5V
1.2
6.0V
10V
1
0.8
0
0
2
4
6
8
0
10
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
30
ID = 2.1A
1.8
1.4
1
0.6
0.14
TA = 125oC
0.12
0.1
0.08
0.06
TA = 25oC
0.2
0.04
-50
-25
0
25
50
75
100
125
2
150
4
o
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
100
TA = -55oC
25oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 20V
ID, DRAIN CURRENT (A)
25
0.16
ID = 4.1 A
VGS = 10V
2.2
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.6
15
ID, DRAIN CURRENT (A)
40
125oC
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2070N3 Rev B1(W)
FDS2070N3
Typical Characteristics
2500
50V
CISS
2000
8
75V
6
4
1500
1000
2
500
0
COSS
CRSS
0
0
10
20
30
0
40
30
Figure 7. Gate Charge Characteristics.
90
120
150
Figure 8. Capacitance Characteristics.
100
50
10
P(pk), PEAK TRANSIENT POWER (W)
R DS(ON) LIMIT
ID, DRAIN CURRENT (A)
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100µs
1ms
10ms
1
100ms
1s
DC
0.1
V GS = 10V
SINGLE PULSE
R θJA = 85 oC/W
0.01
T A = 25 o C
0.1
1
10
100
SINGLE PULSE
R θJA = 85°C/W
T A = 25°C
40
30
20
10
0.001
0
0.01
1000
0.1
1
V DS , DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t 1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
f = 1MHz
VGS = 0 V
VDS = 25V
ID = 4.1A
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
Figure 10. Single Pulse Maximum
Power Dissipation.
1
R θJA (t) = r(t) * R θJA
R θJA = 85 °C/W
D = 0.5
0.2
0.1
P(pk)
0.1
t1
0.05
t2
0.02
T J - T A = P * R θJA (t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.01
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS2070N3 Rev B1(W)
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As used herein:
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be reasonably expected to cause the failure of the life
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2