FUJITSU MB3790PFT

FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-27502-3E
ASSP For Power Supply Applications
Bi-CMOS
Battery Backup IC
MB3790
■ DESCRIPTION
The MB3790 is designed to control power supplies to SRAM, logic IC, or other circuit devices and protects them
against momentary power failures by using backup batteries. In addition to its function to supply the power to
these devices, it has a function to switch the source of power to the primary or secondary backup battery when
the power supply voltage drops below a predetermined level. Also, it outputs a reset signal when the power supply
turns on or off or when a fault occurs in the power supply.
Ideally designed as a single-chip IC for power supply control, the MB3790 consumes only a minimal current and
comes in a thin-type package. Therefore, it is best suited for power supply control in memory cards and similar
other devices.
■ FEATURES
•
•
•
•
•
•
Input circuit current consumption when non-loaded: 50 µA [typ]
Output drive current: 200 mA [max]
Resistance between input and output: 0.5 ohms [typ]
Input power-down detection level: 4.2 V ± 2.5 %
On-chip power-on reset circuit
Primary battery voltage-down detection levels: 2.65 V, 2.37 V
(Continued)
■ PACKAGES
Plastic SOP, 16 pin
Plastic SSOP*, 20 pin
(FPT-16P-M06)
(FPT-20P-M04)
* : Since the SSOP is an extremely thin package, use a partial heating method when mounting the device.
MB3790
(Continued)
• On-chip secondary battery recharging function
• Output current during battery backup: VBAT1: 500 µA [max], VBAT2: 50 µA [max]
• Leakage current: 0.5 µA [max]
■ PIN ASSIGNMENTS
(TOP VIEW)
(TOP VIEW)
N.C.
1
16
CONTROL
N.C.
1
20
CONTROL
V BAT1
2
15
N.C.
V BAT1
2
19
N.C.
V OUT
3
14
V IN
V OUT
3
18
V IN
V OUT
4
13
V IN
V OUT
4
17
V IN
V BAT2
5
12
V SENSE
V BAT2
5
16
V SENSE
ALARM1
6
11
CT
N.C.
6
15
N.C.
ALARM2
7
10
RESET
N.C.
7
14
N.C.
GND
8
9
RESET
ALARM1
8
13
CT
ALARM2
9
12
RESET
10
11
RESET
(FPT-16P-M06)
GND
(FPT-20P-M04)
2
MB3790
■ BLOCK DIAGRAM
R ON =0.5Ω
V IN
V OUT
100Ω
CONTROL
SBD
590KΩ
2.65V
Reference
voltage power
1.24V supply circuit
-
ALARM1
-
500Ω
V IN
+
V SENSE
V IN
+
S
Q
3 µA
2.37V
+
ALARM2
R
V OUT
RESET
Vth:3V
240KΩ
V OUT
RESET
Vth:1.5V
GND
CT
V BAT2
V BAT1
3
MB3790
■ PIN DESCRIPTION
Pin number
4
Symbol
I/O
1
N.C.
—
2
2
VBATI
I
This pin connects to the primary battery.
3, 4
3, 4
VOUT
O
These pins supply the output voltage. (Range of output current value
IOUT ≤ 200 mA)
5
5
VBAT2
I/O
This pin connects to the secondary battery. When the power supply
voltage is greater than or equal to the detection level (i.e., VINH), the
secondary battery is recharged using the constant-voltage method of
charging.
—
6, 7
N.C.
—
Non connection
6
8
ALARM1
O
This is an open-collector output pin for a primary battery alarm
signal. When the power supply voltage is greater than or equal to
VINH, it monitors the primary battery voltage. If the power supply
voltage is less than VINL, it does not monitor the primary battery
voltage. If VBAT1 is less than or equal to 2.65 V, its output voltage is
forced to a Low level.
7
9
ALARM2
O
This is an open-collector output pin for a primary battery alarm
signal. When the power supply voltage is greater than or equal to
VINH, it monitors the primary battery voltage. If the power supply
voltage is less than VINL, it does not monitor the primary battery
voltage. If VBAT1 is less than or equal to 2.37 V, its output voltage is
forced to a Low level.
8
10
GND
—
This pin connects to the ground (0 V).
9
11
RESET
O
This pin outputs a reset signal. When the power supply voltage is
less than or equal to VINL, it outputs a High level.
If the power supply voltage of SRAM is less than the designated
range, it directly controls the CE or CS of SRAM to disable writes and
thereby protect the data in memory.
10
12
RESET
O
This pin outputs an inverted signal of RESET.
11
13
CT
—
This pin is used to set the reset pulse width.
Insert a capacitor between this pin and GND to set the pulse width.
—
14, 15
N.C.
—
Non connection
12
16
VSENSE
I
This pin accepts comparator input for detecting the power supply
voltage level. For details, refer to APPLICATION in this data sheet.
13, 14
17, 18
VIN
I
These pins accept the input voltage for the device.
15
19
N.C.
—
16
20
CONTROL
I
16P
20P
1
Name and function
Non connection
Non connection
This pin is used for output control. For details, refer to APPLICATION
in this data sheet.
MB3790
■ FUNCTIONAL DESCRIPTION
1. Battery Backup Function
• When the power supply voltage exceeds the voltage detection level (i.e., VINH), the device outputs a current of
up to 200 mA from the VIN power supply to the load circuit via the VOUT pin.
• When the power supply voltage is less than or equal to VINL, the device switches the source of power for VOUT
from VIN to the primary or secondary battery for backup purposes.
2. Power Supply Voltage Level Detect Function
When the power supply voltage drops below VINL, the voltage level detection comparator is actuated to perform the
following (note that the detection voltage level has the hysteresis characteristics listed in ELECTRICAL CHARACTERISTICS in this data sheet):
• The comparator first outputs the RESET signal (High level).
• It switches the source of power for the load circuit to the primary or secondary battery.
The power supply voltage detection level can be adjusted by fitting an external resistor to the VSENSE pin. When
adjusting the detection level, be sure to set it to 4.0 V or higher by considering the power supply voltage for the
internal circuit operation.
In addition, the detection set time can be extended by connecting a capacitator. For this method of adjustment, refer
to APPLICATION in this data sheet.
3. Reference Voltage Circuit
This is a temperature-compensated reference voltage circuit of a band gap type so that it outputs a trimmingadjusted exact reference voltage.
The reference voltage power supply is used to set the reference voltage/constant current values of the detection
circuit, as well as the secondary battery recharging voltage.
4. Power-on Reset Function
By charging the capacitator connected to the CT pin with constant current (approx. 3 µA), this function determines
the reset pulse width. The calculation formula for this is given below:
Reset pulse width tPO (sec) ≅ CT (F) × 106
(When CT = 1000 pF, tPO ≅ 1 ms [typ])
5. Primary Battery Voltage Detection Function
If the primary battery voltage drops below the detection level when the power supply voltage is greater than or equal
to VINL, the device outputs an alarm signal (Low level) from the CMOS output pin, ALARM1 or ALARM2.
Note that the voltage level detection comparator has the hysteresis characteristics listed in ELECTRICAL CHARACTERISTICS in this data sheet.
• When the primary battery voltage is 2.65 V [typ] or less:
The ALARM1 output pin is forced to a Low level to issue an alarm indicating that it’s time to replace the primary
battery.
• When the primary battery voltage is 2.37 V [typ] or less:
The ALARM2 output pin is forced to a low level to issue an alarm indicating that the primary battery voltage
is less than the voltage necessary to retain the SRAM data (approx. 2.0 V)
6. Secondary Battery Recharging Function
When the power supply voltage is greater than or equal to VINL, the device recharges the secondary battery using
the constant-voltage method of charging. Note that the typical value of the device's internal recharging resistor is
500 ohms.
5
MB3790
■ DESCRIPTION OF OPERATION
1. Operation When the Input Voltage Goes On or Off
DV IN
V IN
V INH
V INL
(1)
(2)
(3)
(4)
(2)
(3)
(4)
V IN-DV1
V OUT
V BAT1-DVB1
t PO
t PO
V IN-DV1
RESET
V BAT1-DVB1
High level
Low level
High level
Low level
High level
RESET
V IN-DV1
Low level
High level
Low level
High level
Low level
(1) Power-on
While the power supply voltage is less than VINH (4.3 V typ), the protected devices such as SRAM or a microprocessor
are in the standby mode with the power supplied by the battery.
When the power supply voltage rises to a level greater than or equal to VINH, the PMOS transistor between the input/
output pins turns on and the power for such devices is supplied from the VIN pin. At the same time, the primary
battery voltage detection and the secondary battery recharging operations are actuated.
(2) Standby mode
When the power supply voltage rises to a level greater than or equal to VINH, the RESET pin outputs a High level
for the set duration of time and the devices such as SRAM or a microprocessor are held in the standby mode. Note
that the set duration of time can be adjusted by changing the capacitance of the CT pin.
The RESET pin outputs an inverted signal of the RESET pin.
(3) Active mode
The reset signal is cleared and the devices such as SRAM or a microprocessor are placed in the operating mode.
6
MB3790
(4) Momentary power failure or voltage dip
When the power supply voltage drops less than or equal to VINL. (4.2 V typ) as the power supply goes down or its
voltage dips momentarily, the RESET pin outputs a High level and the RESET pin outputs a low level. The devices
such as SRAM or a microprocessor are thereby placed in the standby mode and powered from the battery. When
in this mode, the primary battery voltage detection and the secondary battery recharging operations are stopped.
Note: To guarantee backup operation in case of momentary power failure, make sure the 5 V-to-0 V fall time on VIN
is 50 µs or more by using, for example, a capacitator.
2. Alarm Operation
DV BAT2
DV BAT1
V BATH1
V BATL1
V BAT1
V BATH2
V BATL2
ALARM1
(1)
(1)
ALARM2
(2)
(2)
If the primary battery voltage decreases while the power supply voltage (VIN) is greater than or equal to VINH (4.3 V
typ), alarm signals are output as described below. At this time, if the VBAT1 pin is released open, the output from the
alarm pin becomes indeterminate.
(1) Primary battery replacement alarm (alarm-1 output)
If the primary battery voltage drops to VBAT1 (2.65 V typ), the ALARM1 pin is forced to a Low level to issue an alarm
indicating that it’s time to replace the primary battery.
(2) Primary battery minimum voltage alarm (alarm-2 output)
If the primary battery voltage further drops to VBAT2 (2.37 V typ), the ALARM2 pin is forced to a Low level to issue
an alarm indicating that the primary battery power has dropped below the voltage necessary to retain the SRAM
data (approx. 2.0 V).
7
MB3790
■ ABSOLUTE MAXIMUM RATINGS
(Ta = +25°C)
Parameter
Symbol
Conditions
Rating
Unit
Input voltage
VIN
–0.3 to 6
V
Battery voltage
VBAT
–0.3 to 6
V
Reset output Voltage
VRESET
– 0.3 to VOUT + 0.3 (≤ 6)
V
Alarm output Voltage
VALARM
– 0.3 to VIN + 0.3 (≤ 6)
V
Output current
IOUT
250
mA
Output high current
IOH
Source current
6
mA
Output low current
IOL
Sink current
6
mA
SSOP
PD
450*
mW
Power dissipation
SOP
540*
mW
–55 to +125
°C
Storage temperature
Tstg
—
Ta ≤ +25°C
—
* : When mounted on a 4 cm-square double-side epoxy board.
WARNING: Permanent device damage may occur if the above ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to the conditions as detailed in the operational sections of
this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Input voltage
VIN
Battery voltage
VBAT
Output current
IOUT
Output current during
battery backup
Operating temperature
8
Symbol
Conditions
—
Value
Typ.
Max.
—
5.0
5.5
V
—
3.0
3.3
V
0
—
200
mA
IO(BAT1)
Supply from the
primary battery
—
—
500
IO(BAT2)
Supply from the
secondary battery
—
—
50
—
–30
—
+70
Top
Unit
Min.
µA
°C
MB3790
■ ELECTRICAL CHARACTERISTICS
• DC characteristics
(Recommended operating conditions unless otherwise noted.)
(VIN = +5 V, Ta = +25°C)
Parameter
Symbol
Conditions
Value
Min.
Typ.
Max.
Unit
All sections
Input current
IIN1
IOUT = 0 mA
—
50
100
µA
Backup
Power
Supply
Section
Input/output voltage
difference
DV1
IOUT = 1 mA
—
0.5
10
mV
DV2
IOUT = 200 mA
—
100
300
mV
Output delay time
tro
CO = 0.01 µF, CT = 0
—
2.0
10
µs
VIN
4.10
4.20
4.30
V
Ta = – 30°C to + 70°C
4.05
4.20
4.35
V
VIN
4.20
4.30
4.40
V
Ta = – 30°C to + 70°C
4.15
4.30
4.45
V
VINH – VINL
50
100
150
mV
VOHR
IOHR = 1 mA
4.5
4.8
—
V
VOLR
IOLR = 5 mA
—
0.2
0.4
V
IOHR = 0.2 mA
2.2
2.6
—
V
IOLR = 3 mA
—
0.2
0.4
V
0.5
1.0
2.0
ms
5.0
—
—
µs
VINL
Input low voltage detection
VINH
Input low voltage hysteresis
DVIN
width
Power
Supply
Monitoring
Section
Reset output voltage
Reset output voltage
VOHR
during backup V IN = 0 V
VBAT1 = 3 V VOLR
Reset pulse width
tPO
Input pulse width
tPI
Reset output rise time
trR
Reset output fall time
Reset output delay time
CT = 1000 pF
—
2.0
3.0
µs
tfR
CT = 1000 pF
CL = 100 pF
—
0.2
1.0
µs
tpdR
VIN slew rate < 0.1 V/µs
—
2.0
10
µs
(Continued)
9
MB3790
(Continued)
(VIN = +5 V, Ta = +25°C)
Parameter
Symbol
VBATL1
Low voltage detection 1
VBATH1
Low voltage detection-1
hysteresis width
DVBAT1
VBATL2
Low voltage detection 2
VBATH2
Battery-1
Monitoring
Section
Unit
Min.
Typ.
Max.
VBAT
2.55
2.65
2.75
V
Ta = – 30°C to +70°C
2.52
2.65
2.78
V
VBAT
2.59
2.69
2.79
V
Ta = – 30°C to +70°C
2.56
2.69
2.82
V
20
40
60
mV
VBAT
2.27
2.37
2.47
V
Ta = – 30°C to +70°C
2.24
2.37
2.50
V
VBAT
2.31
2.41
2.51
V
Ta = – 30°C to +70°C
2.28
2.41
2.54
V
VBATH1 – VBATL1
DVBAT2
VBATH2 – VBATL2
20
40
60
mV
Low voltage detection
difference
DVBAT
VBATL1 – VBATL2
0.26
0.28
0.30
V
IBATA
VBAT = 3 V, VIN = 0 V
–100
—
500
nA
IBATB
VBAT = 3 V, VIN = 5 V
–100
—
500
nA
IBAT1 = 100 µA
—
0.30
0.35
V
IBAT1 = 10 µA
—
0.10
0.15
V
VOHA
IOHA = 4 mA
4.5
4.8
—
V
VOLA
IOLA = 5 mA
—
0.2
0.4
V
—
2.0
3.0
µs
—
0.2
1.0
µs
—
2.0
10
µs
Battery-1 output voltage
difference
during backup, CTL = GND
Alarm output voltage
10
Value
Low voltage detection-2
hysteresis width
Battery-1 input current
Battery-2
Monitoring
Section
Conditions
DVB1
Alarm output rise time
trA
Alarm output fall time
tfA
Alarm output delay time
tpdA
50 mV overdrive
Battery-2 recharging
voltage
VCHG
ICHG = –10 µA
2.80
3.00
3.20
V
Battery-2 recharging current ICHG
VCHG = 2.0 V
1.0
2.0
—
mA
Battery-2 output voltage
difference
during backup
IBAT2 = 10 µA
—
0.10
0.15
V
DVB2
CL = 100 pF
MB3790
■ TIMING CHART
1. Rise/Fall Times on Reset and Alarm Pins: tr/tf
90%
RESET
90%
RESET
ALARM1
ALARM2
10%
10%
tr
tf
2. Reset Pulse Width: tPO; Input Pulse Width: tPI; Reset Output Delay Time: tpdR
t PI
5V
V IN
V INH
V INL
4V
t PO
t pdR
t pdR
V IH-DV1
RESET
V BAT1-DVB2
11
MB3790
3. Alarm Output delay time: tpdA
50mV
V BATL1, V BATL2
V BAT1
50mV
t pdA
ALARM1
ALARM2
4. VOUT Output Delay Time: tro
5V
V IN
98%
V OUT
t ro
12
MB3790
■ TYPICAL CHARACTERISTIC CURVES
1. VOH characteristics of RESET pin
2. VOL characteristics of RESET pin
0.5
V IN = OPEN
V BAT1 =+3V
2.8
Output voltage VOL (V)
Output voltage VOH (V)
3.0
2.6
2.4
2.2
2.0
0.0
-0.2
-0.4
-0.6
-0.8
0.3
0.2
0.1
0
0.0
-1.0
V IN =+5V
V BAT1 =+3V
0.4
1.0
Current I (mA)
Output voltage VOL (V)
Output voltage VOH (V)
5.0
0.5
4.8
4.6
4.4
V IN =+5V
V BAT1 =+3V
4.2
-0.4
-0.8
-1.2
-1.6
0.3
0.2
0.1
0
0.0
-2.0
V IN = OPEN
V BAT1 =+3V
0.4
1.0
Current I (mA)
2.0
3.0
4.0
5.0
Current I (mA)
5. VOH characteristics of ALM pin
6. VOL characteristics of ALM pin
5.0
0.5
Output voltage VOL (V)
Output voltage VOH (V)
4.0
4. VOL characteristics of RESET pin
5.0
4.8
4.6
4.4
V IN =+5V
V BAT1 =+3V
4.2
4.0
0.0
3.0
Current I (mA)
3. VOH characteristics of RESET pin
4.0
0.0
2.0
-1.0
-2.0
-3.0
Current I (mA)
-4.0
-5.0
V IN =+5V
V BAT1 =+2V
0.4
0.3
0.2
0.1
0
0.0
1.0
2.0
3.0
4.0
5.0
Current I (mA)
(Continued)
13
MB3790
(Continued)
7. Temperature characteristics of input current
8. Temperature characteristics of battery power
detection voltage
70
2.9
60
2.8
50
2.7
V BATH1
2.6
V BATL1
Battery voltage V BAT (V)
Input current I IN (µA)
V IN =+5V
40
30
20
10
V BATL2
2.2
-40
-20
0
20
40
60
80
Ambient temperature Ta (°C)
7. Temperature characteristics of power-down
detection voltage
4.6
4.5
Power-down detection voltage V IN (V)
V BATH2
2.4
2.3
0
4.4
V INH
4.3
V INL
4.2
4.1
4.0
3.9
-40
-20
0
20
40
60
80
Ambient temperature Ta (°C)
14
2.5
-40
-20
0
20
40
60
80
Ambient temperature Ta (°C)
MB3790
■ APPLICATION
1. Method of Using the CONTROL Pin
It is possible to control the operation of analog switch 1 by entering a High or Low level to the CONTROL pin while
being powered by the battery. The Table below shows how the analog switch operates when its operation is controlled
from the CONTROL pin.
When using the primary and the secondary batteries in combination as in the case of memory cards, be sure to
set the CONTROL pin High to prevent the primary battery from being recharged by the secondary battery current
flowing from analog switch 1.
• Control Conditions of CONTROL Pin
Operating state
Control conditions
ON/OFF State of analog switch*2
Input voltage (VIN)
CONTROL pin*1
Analog switch 1
Analog switch 2
VIN > VINL
High/Low
OFF
OFF
VINL > VIN
High (= VOUT)
OFF
ON
VINL > VIN
Low (= GND)
ON
ON
Standby/active state
Backup state
*1: If the CONTROL pin is released open, the logic state of the CMOS circuit may become instable letting current
flow into the circuit. Therefore, the CONTROL pin must always have a High or Low level input.
*2: The ON-resistance of the analog switch is approximately 10 K ohms.
Analog Switch connection Diagram
V OUT
SBD
Analog Switch 2
Analog Switch 1
V BAT1
Connection to the
primary battery
V BAT2
Connection to the
secondary battery
15
MB3790
3. Outputting Reset Signal Forcibly
The reset signal can be output forcibly by bringing the VSENSE pin of the MB3790 to a Low level (< 1.24). The reset
signal is held on until the capacitator CT is charged up after the VSENSE pin is released open.
Forced Reset Method 1
V IN
V IN
CT
47KΩ
VSENSE
CT
SW
GND
SW: Turned on (VRESET = High)
Forced Reset Method 2
V IN
V IN
CT
47KΩ
VSENSE
Control signal
input pin
CT
10KΩ
Q1
GND
10KΩ
When the voltage enough to turn on Q1 (≥ approx. 1.2 V) gives to the Control signal input pin,
VRESET is equal to High level.
[Reset Pulse Width Calculation Formula]
Reset Pulse Width tPO (sec) = CT (F) ×106 (where CT = capacitance)
Example: When CT = 1000 pF, tPO = 1 ms (Typ)
16
MB3790
4. Adjusting the Supply Voltage Detection Level Set time
The MB3790 outputs a reset signal when the power supply momentarily goes down or its voltage sags for 5 µs or
more. The set time before this reset signal is output can be extended by connecting a capacitor to the VSENSE pin.
Adjusting the Supply Voltage Detection Level Set Time
V IN
V IN
5V
VSENSE
4V
t PI
C
GND
5. Compatibility with JEIDA Memory Card Guideline Ver. 4
The MB3790 has its ALM1 and ALM2 pin specifications matched to the BVD2 and BVD1 pin specifications of the
JEIDA Memory Card Guideline Ver. 4. Therefore, the ALM1 and ALM2 pins can be connected directly to the BVD2
and BVD1 pins.
• Alarm Pin Detection Voltage Levels
Pin Name
VBAT1 ≤ 2.37 V
2.37 V < VBAT1 ≤ 2.65V
2.65 V ≤ VBAT1
Connected Pin
ALM1
Low level
Low level
High level
BVD2
ALM2
Low level
High level
High level
BVD1
VBAT1: Primary battery voltage
17
MB3790
■ STANDARD DEVICE CONFIGURATION
V IN
*2
*1
C1
V BAT1
CONTROL
V OUT
V OUT
V IN
V IN
*2
V BAT2
*1
Primary
battery
ALARM2
Secondary
battery
ALARM1
ALARM1
CT
ALARM2
RESET
GND
RESET
C2
L
O
G
I
C
CT
GND
*1 For C1 and C2, use capacitors of 0.022 µF or more.
*2 For VIN and VOUT, connect these two pins to the mating pins, respectively.
■ ORDERING INFORMATION
Part number
MB3790PF
MB3790PFT
18
Package
16 pin, Plastic SOP
(FPT-16P-M06)
20 pin, Plastic SSOP
(FPT-20P-M04)
Remarks
S
R
A
M
MB3790
■ PACKAGE DIMENSIONS
16-pin, Plastic SOP
(FPT-16P-M06)
2.25(.089)MAX
10.15
+0.25
–0.20
.400
+.010
–.008
0.05(.002)MIN
(STAND OFF)
INDEX
5.30±0.30
(.209±.012)
+0.40
6.80 –0.20
+.016
.268 –.008
7.80±0.40
(.307±.016)
"B"
1.27(.050)
TYP
0.45±0.10
(.018±.004)
+0.05
Ø0.13(.005)
0.15 –0.02
+.002
.006 –.001
M
Details of "A" part
Details of "B" part
0.40(.016)
0.15(.006)
0.20(.008)
"A"
0.10(.004)
8.89(.350)REF
C
0.50±0.20
(.020±.008)
1994 FUJITSU LIMITED F16015S-2C-4
0.20(.008)
0.18(.007)MAX
0.18(.007)MAX
0.68(.027)MAX
0.68(.027)MAX
Dimensions in mm (inches)
(Continued)
19
MB3790
(Continued)
20-pin, Plastic SSOP
(CASE No.: FPT-20P-M04)
* 6.50±0.10
1.10±0.10
(.043±.004)
(.256±.004)
0.10(.004)
* 4.40±0.10
6.40±0.20
(.173±.004) (.252±.008)
INDEX
5.40(.213)NOM
"A"
0.22
.009
0.65±0.12
(.0256±.0047)
+0.10
–0.05
+.004
–.002
+0.05
0.15 –0.02
+.002
.006 –.001
Details of "A" part
0.10±0.10
(STAND OFF)
(.004±.004)
0.50±0.20
(.020±.008)
5.85(.230)REF
0°~10°
C
1994 FUJITSU LIMITED F20014S-1C-4
Dimensions in mm (inches)
Since the SSOP (FPT-20P-M04) is built in an extremely thin structure, use a partial heating method when mounting
the device.
20
FUJITSU LIMITED
For further information please contact:
Japan
FUJITSU LIMITED
Corporate Global Business Support Division
Electronic Devices
KAWASAKI PLANT, 4-1-1, Kamikodanaka
Nakahara-ku, Kawasaki-shi
Kanagawa 211-88, Japan
Tel: (044) 754-3763
Fax: (044) 754-3329
North and South America
FUJITSU MICROELECTRONICS, INC.
Semiconductor Division
3545 North First Street
San Jose, CA 95134-1804, U.S.A.
Tel: (408) 922-9000
Fax: (408) 432-9044/9045
Europe
FUJITSU MIKROELEKTRONIK GmbH
Am Siebenstein 6-10
63303 Dreieich-Buchschlag
Germany
Tel: (06103) 690-0
Fax: (06103) 690-122
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE. LIMITED
#05-08, 151 Lorong Chuan
New Tech Park
Singapore 556741
Tel: (65) 281-0770
Fax: (65) 281-0220
All Rights Reserved.
The contents of this document are subject to change without
notice. Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document presented
as examples of semiconductor device applications, and are not
intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the
use of this information or circuit diagrams.
FUJITSU semiconductor devices are intended for use in
standard applications (computers, office automation and other
office equipment, industrial, communications, and measurement
equipment, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special
applications where failure or abnormal operation may directly
affect human lives or cause physical injury or property damage,
or where extremely high levels of reliability are demanded (such
as aerospace systems, atomic energy controls, sea floor
repeaters, vehicle operating controls, medical devices for life
support, etc.) are requested to consult with FUJITSU sales
representatives before such use. The company will not be
responsible for damages arising from such use without prior
approval.
Any semiconductor devices have inherently a certain rate of
failure. You must protect against injury, damage or loss from
such failures by incorporating safety design measures into your
facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating
conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Control Law of Japan, the
prior authorization by Japanese government should be required
for export of those products from Japan.
F9703
 FUJITSU LIMITED Printed in Japan
24