KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier • Complement to KSC2690/KSC2690A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Symbol VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO IC TC=25°C unless otherwise noted Parameter : KSA1220 : KSA1220A Ratings - 120 - 160 Units V V - 120 - 160 V V Emitter-Base Voltage -5 V Collector Current (DC) - 1.2 A ICP *Collector Current (Pulse) - 2.5 A IB Base Current - 0.3 A PC Collector Dissipation (Ta=25°C) 1.2 W : KSA1220 : KSA1220A PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB = - 120V, IE = 0 Min. Typ. Max. -1 Units µA 35 60 150 140 -1 µA 320 IEBO Emitter Cut-off Current VEB = - 3V, IC = 0 hFE1 hFE2 * DC Current Gain VCE = - 5V, IC = - 5mA VCE = - 5V, IC = - 0.3A VCE(sat) * Collector-Emitter Saturation Voltage IC = - 1A, IB = - 0.2A - 0.4 - 0.7 V VBE(sat) * Base-Emitter Saturation Voltage IC = - 1A, IB = - 0.2A -1 - 1.3 V fT Current Gain Bandwidth Product VCE = - 5V, IC = - 0.2A 175 MHz Cob Output Capacitance VCB = - 10, IE = 0 f = 1MHz 26 pF * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification R O Y hFE2 60 ~ 120 100 ~ 200 160 ~ 320 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA1220/1220A Typical Characteristics -0.8 -9 m A -8 m A = = IB = -6mA IB IB 1000 IB = -7mA VCE = -5V Pulse Test IB = -5mA IB = IB = -4mA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -10 mA -1.0 -0.6 IB = -3mA -0.4 IB = -2mA IB = -1mA -0.2 100 10 IB = 0A -0.0 -0 -10 -20 -30 -40 -50 1 -1E-3 -60 VCE[V], COLLECTOR-EMITTER VOLTAGE -1 1000 -10 f=1.0MHz IE=0 IC = 5 IB Pulse Test -1 V BE(sat) -0.1 VCE(sat) -0.01 -1E-3 -10 Figure 2. DC current Gain Cob(PF), CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -0.1 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic 100 10 1 -0.01 -0.1 -1 -10 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 1000 -10 VCE = -5V Pulse Test =1 ㎲ 00 s Limited 1m Dissipation D C s) 0m =5 W ed ( P im it L b S/ 10 IC MAX. (DC) -1 PW 100 s IC[A], COLLECTOR CURRENT IC MAX. (Pulse) m 10 fTMHz), CURRENT GAIN BANDWIDTH PRODUCT -0.01 -0.1 KSA1220 KSA1220A -0.01 1 -0.01 -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2001 Fairchild Semiconductor Corporation -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A1, June 2001 KSA1220/1220A Typical Characteristics (Continued) 20 160 18 PC[W], POWER DISSIPATION 140 dT(%),IcDERATING 120 100 S/b 80 Di ss 60 40 ip a Lim ited tio n Li m ite d 16 14 12 10 8 6 4 20 2 0 0 50 100 150 200 o Tc[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Areas ©2001 Fairchild Semiconductor Corporation 0 0 50 100 150 200 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A1, June 2001 KSA1220/1220A Package Demensions 8.00 ±0.30 11.00 ø3.20 ±0.10 ±0.20 3.25 ±0.20 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 16.10 ±0.30 13.06 0.75 ±0.10 ±0.20 1.75 ±0.20 1.60 ±0.10 +0.10 0.50 –0.05 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3