FAIRCHILD QED221

PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
PACKAGE DIMENSIONS
0.195 (4.95)
REFERENCE
SURFACE
0.305 (7.75)
0.040 (1.02)
NOM
0.800 (20.3)
MIN
0.050 (1.25)
CATHODE
0.100 (2.54)
NOM
SCHEMATIC
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)
ANODE
NOTES:
CATHODE
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The QED22X is an 880nm AlGaAs LED encapsulated in clear, purple tinted, plastic T-1 3/4 package.
FEATURES
• != 880 nm
• Chip material = AlGaAs
• Package type: T-1 3/4 (5mm lens diameter)
• Matched Photosensor: QSD122/123/124
• Medium Wide Emission Angle, 40°
• High Output Power
• Package material and color: Clear, purple tinted, plastic
 2001 Fairchild Semiconductor Corporation
DS300337
12/07/01
1 OF 4
www.fairchildsemi.com
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
ABSOLUTE MAXIMUM RATINGS
QED223
(TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-40 to +100
°C
Storage Temperature
TSTG
-40 to +100
°C
(2,3,4)
TSOL-I
240 for 5 sec
°C
(2,3)
TSOL-F
260 for 10 sec
°C
Continuous Forward Current
IF
100
mA
Reverse Voltage
VR
5
V
PD
200
mW
IF(Peak)
1.5
A
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Power Dissipation
(1)
Peak Forward Current
(5)
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
Peak Emission Wavelength
(TA =25°C)
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
IF = 100 mA
!PE
—
880
—
nm
Emission Angle
IF = 100 mA
"
—
±20
—
Deg.
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
—
—
1.7
V
Reverse Current
VR = 5 V
IR
—
—
10
µA
Radiant Intensity QED221
IF = 100 mA, tp = 20 ms
IE
10
—
20
mW/sr
Radiant Intensity QED222
IF = 100 mA, tp = 20 ms
IE
16
—
32
mW/sr
Radiant Intensity QED223
IF = 100 mA, tp = 20 ms
IE
25
—
—
mW/sr
tr
—
800
—
ns
tf
—
800
—
ns
Rise Time
Fall Time
IF = 100 mA
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5. Pulse conditions; tp = 100 µS, T = 10 ms.
www.fairchildsemi.com
2 OF 4
12/07/01
DS300337
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
Fig. 2 Coupling Characteristics of QED22X with QSD12X
NORMALIZED COLLECTOR CURRENT
NORMALIZED RADIANT INTENSITY
Fig. 1 Normalized Radiant Intensity vs. Input Current
10
Normalized to:
IF= 100 mA, TA = 25˚C
Pulse Width = 100 µs
1
0.1
0.01
0.001
1
10
100
1000
1
Normalized to:
Pulse Width = 100 µs
Duty Cycle = 0.1%
VCC = 5 V
RL = 100 Ω
TA = 25˚C
IF = 100 mA
0.8
0.6
IF = 20 mA
0.4
0.2
0
0
2
1
3
4
5
6
LENS TIP SEPERATION (INCHES)
IF - INPUT CURRENT (mA)
Fig. 4 Normalized Radiant Intensity vs. Wavelength
Fig. 3 Forward Voltage vs. Temperature
1.0
IF = 100 mA
IF = 50 mA
2
1.5
1
IF = 10 mA
0.5
IF = 20 mA
Pulse Width = 100 µs
Duty Cycle = 0.1%
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90 100
NORMALIZED RADIANT INTENSITY
VF - FORWARD VOLTAGE (V)
2.5
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
TA - TEMPERATURE (˚C)
775
800
825
850
875
900
925
950
λ (nm)
Fig. 5 Forward Current vs. Forward Voltage
Fig. 6 Radiation Pattern
1000
IF - FORWARD CURRENT (mA)
TA = 25˚C
20
10
0˚
-10
-20
30
100
-30
40
-40
50
-50
60
10
-60
-70
70
80
-80
1
-90
90
100
1
2
3
80
60
40
20
0
20
40
60
80
100
4
VF - FORWARD VOLTAGE (V)
DS300337
12/07/01
3 OF 4
www.fairchildsemi.com
PLASTIC INFRARED LIGHT
EMITTING DIODE
QED221
QED222
QED223
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
www.fairchildsemi.com
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
4 OF 4
12/07/01
DS300337