IGBT FMBL1G200US60 Molding Type Module General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • • • • • • UL Certified No. E209204 Short circuit rated 10us @ TC = 100°C, VGE = 15V High speed switching Low saturation voltage : VCE(sat) = 2.2 V @ IC = 200A High input impedance Fast & soft anti-parallel FWD Package Code : 7PM-BB E1/C2 Application E2 C1 • Boost (Step Up) Converter G2 E2 Internal Circuit Diagram Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M6 @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ AC 1minute FMBL1G200US60 600 ± 20 200 400 200 400 10 830 -40 to +150 -40 to +125 2500 2.0 2.5 Units V V A A A A us W °C °C V N.m N.m Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A FMBL1G200US60 July 2001 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA 5.0 -- 8.5 V IC = 200A, VGE = 15V -- 2.2 2.8 V VCE = 30V, VGE = 0V, f = 1MHz ---- 14600 2170 500 ---- pF pF pF --------------- 120 75 200 90 3.6 8.7 12.3 220 100 290 210 4.8 11.8 16.6 --250 200 ----------- ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 200A, VGE = 15V ---- 820 170 365 900 --- nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC= 200mA Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2001 Fairchild Semiconductor Corporation VCC = 300 V, IC = 200A, RG = 1.8Ω, VGE = 15V Inductive Load, TC = 25°C VCC = 300 V, IC = 200A, RG = 1.8Ω, VGE = 15V Inductive Load, TC = 125°C @ TC = FMBL1G200US60 Rev. A FMBL1G200US60 Electrical Characteristics of IGBT T C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 200A TC = 100°C IF = 200A di / dt = 400 A/us Min. -- Typ. 1.9 Max. 2.8 -- 1.8 -- TC = 25°C -- 90 130 TC = 100°C -- 130 -- TC = 25°C -- 19 25 TC = 100°C -- 25 -- TC = 25°C -- 855 1600 TC = 100°C -- 1625 -- Units V ns A nC Thermal Characteristics Symbol RθJC RθJC RθCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module ©2001 Fairchild Semiconductor Corporation Typ. --0.03 -- Max. 0.15 0.35 -270 Units °C/W °C/W °C/W g FMBL1G200US60 Rev. A FMBL1G200US60 Electrical Characteristics of DIODE T Collector Current, IC [A] 20V 15V Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 12V 350 Collector Current, I C [A] Common Emitter TC = 25℃ 350 300 V GE = 10V 250 200 150 300 250 200 150 100 100 50 50 0 0 0 2 4 6 8 0.3 Collector - Emitter Voltage, VCE [V] 10 20 Fig 2. Typical Saturation Voltage Characteristics 240 5 Common Emitter V GE = 15V V CC = 300V Load Current : peak of square wave 210 4 180 400A Load Current [A] Collector - Emitter Voltage, VCE [V] 1 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics 3 200A 2 150 120 90 IC = 100A 60 1 Duty cycle : 50% TC = 100℃ Power Dissipation = 250W 30 0 0 0 30 60 90 120 0.1 150 1 10 100 1000 Frequency [Khz] Case Temperature, TC [℃] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 125℃ Collector - Emitter Voltage, V CE [V] Common Emitter T C = 25℃ Collector - Emitter Voltage, VCE [V] FMBL1G200US60 400 400 16 12 8 400A 4 200A IC = 100A 0 16 12 8 400A 4 200A IC = 100A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2001 Fairchild Semiconductor Corporation 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FMBL1G200US60 Rev. A 35000 30000 Cies 25000 20000 Coes 15000 10000 Tr 100 Cres 5000 50 0 0.5 1 10 1 30 10 Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 3000 100000 Common Emitter V CC = 300V, V GE = ± 15V IC = 200A TC = 25℃ TC = 125℃ 1000 Common Emitter VCC = 300V, V GE = ± 15V IC = 200A TC = 25℃ TC = 125℃ Toff Switching Loss [uJ] Switching Time [ns] 50 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, VCE [V] Tf 10000 Eoff Eon Tf 100 1000 1 50 1 10 50 10 Gate Resistance, R G [Ω ] Fig 10. Switching Loss vs. Gate Resistance Common Emitter V CC = 300V, VGE = ± 15V RG = 1.8Ω T C = 25℃ T C = 125℃ Switching Time [ns] 1000 50 Gate Resistance, RG [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Switching Time [ns] Ton Switching Time [ns] Capacitance [pF] Common Emitter VCC = 300V, VGE = ± 15V IC = 200A TC = 25℃ TC = 125℃ Common Emitter VGE = 0V, f = 1MHz TC = 25℃ FMBL1G200US60 1000 40000 Ton 100 Tr 1000 Common Emitter V CC = 300V, V GE = ± 15V RG = 1.8Ω TC = 25℃ TC = 125℃ Toff Tf 100 50 10 30 40 60 80 100 120 140 160 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2001 Fairchild Semiconductor Corporation 180 200 30 40 60 80 100 120 140 160 180 200 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FMBL1G200US60 Rev. A Eoff Eon 1000 Common Emitter V CC = 300V, VGE = ± 15V RG = 1.8Ω T C = 25℃ T C = 125℃ 100 30 40 60 80 100 120 140 160 180 Gate - Emitter Voltage, V GE [ V ] 15 10000 Switching Loss [uJ] FMBL1G200US60 30000 Common Emitter R L = 1.5 Ω T C = 25℃ 12 300 V 9 200 V V CC = 100 V 6 3 0 200 0 100 200 Collector Current, IC [A] 300 400 500 600 700 800 900 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 1000 1000 IC MAX. (Pulsed) Collector Current, IC [A] Collector Current, IC [A] 50us IC MAX. (Continuous) 100us 100 1㎳ DC Operation 10 Single Nonrepetitive Pulse TC = 25℃ Curves must be derated linerarly with increase in temperature 1 0.3 1 100 10 Safe Operating Area o V GE = 20V, T C = 100 C 10 100 1 1000 1 10 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics 1 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 1000 Fig 16. Turn-Off SOA Characteristics 1000 100 10 1 100 Collector-Emitter Voltage, V CE [V] Single Nonrepetitive Pulse T J ≤ 125℃ V GE = 15V RG = 1.8 Ω 0 100 200 0.1 0.01 T C=25℃ IGBT : DIODE : 1E-3 300 400 500 600 700 10 Collector-Emitter Voltage, V CE [V] Fig 17. RBSOA Characteristics ©2001 Fairchild Semiconductor Corporation -5 10 -4 -3 10 -2 10 -1 10 10 0 1 10 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FMBL1G200US60 Rev. A Forward Current, I F [A] 400 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] Common Cathode V GE = 0V T C = 25℃ T C = 125℃ 300 200 100 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2001 Fairchild Semiconductor Corporation 3 4 Common Cathode di/dt = 400A/㎲ T C = 25℃ T C = 100℃ Irr T rr 10 5 0 40 80 120 160 200 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FMBL1G200US60 Rev. A FMBL1G200US60 50 500 FMBL1G200US60 Package Dimension 7PM-BB (FS PKG CODE BE) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation FMBL1G200US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3