IGBT SGP15N60RUF Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required. • • • • Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 15A High Input Impedance Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C G G C E TO-220 Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL E TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGP15N60RUF 600 ± 20 24 15 45 10 160 64 -55 to +150 -55 to +150 Units V V A A A us W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2000 Fairchild Semiconductor International Typ. --- Max. 0.77 62.5 Units °C/W °C/W SGP15N60RUF Rev. A SGP15N60RUF September 2000 Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 15mA, VCE = VGE IC = 15A, VGE = 15V IC = 24A, VGE = 15V 5.0 --- 6.0 2.2 2.5 8.5 2.8 -- V V V ---- 948 101 33 ---- pF pF pF --------------- 17 33 44 118 320 356 676 20 34 48 212 340 695 1035 --65 200 --950 --70 350 --1450 ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Le Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ©2000 Fairchild Semiconductor International VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 15A, RG = 13Ω, VGE = 15V, Inductive Load, TC = 125°C VCC = 300 V, VGE = 15V 100°C @ TC = VCE = 300 V, IC = 15A, VGE = 15V Measured 5mm from PKG 10 -- -- us ----- 42 7 17 7.5 60 10 24 -- nC nC nC nH SGP15N60RUF Rev. A SGP15N60RUF Electrical Characteristics of IGBT T 45 20V Common Emitter T C = 25℃ 45 15V 12V Collector Current, IC [A] Collector Current, IC [A] 35 30 VGE = 10V 25 Common Emitter VGE = 15V TC = 25℃ ━━ TC = 125℃ ------ 40 40 20 15 35 30 25 20 15 10 10 5 5 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, VCE [V] Fig 2. Typical Saturation Voltage Characteristics 24 4.0 V CC = 300V Load Current : peak of square wave Common Emitter V GE = 15V 3.5 20 30A Load Current [A] Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, V CE [V] Fig 1. Typical Output Characteristics 3.0 2.5 15A 2.0 16 12 8 IC = 8A 1.5 4 1.0 Duty cycle : 50% T C = 100℃ Power Dissipation = 25W 0 -50 0 50 100 150 0.1 1 Case Temperature, T C [℃] 10 100 1000 Frequency [KHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Collector - Emitter Voltage, V CE [V] Common Emitter TC = 25℃ Collector - Emitter Voltage, V CE [V] SGP15N60RUF 50 16 12 8 30A 4 15A Common Emitter T C = 125℃ 16 12 8 30A 4 15A IC = 7A IC = 7A 0 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE ©2000 Fairchild Semiconductor International 20 0 4 8 12 16 20 Gate - Emitter Voltage, V GE [V] Fig 6. Saturation Voltage vs. VGE SGP15N60RUF Rev. A Common Emitter VGE = 0V, f = 1MHz TC = 25℃ Common Emitter V CC = 300V, V GE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ ------ Cies Switching Time [ns] Capacitance [pF] 1500 1200 900 Coes 600 Ton 100 Tr Cres 300 10 0 1 1 10 10 Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics 1000 Common Emitter V CC = 300V, VGE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ ------ Common Emitter V CC = 300V, VGE = ± 15V IC = 15A T C = 25℃ ━━ T C = 125℃ -----Toff Toff Tf Switching Loss [uJ] Switching Time [ns] 100 Gate Resistance, R G [Ω ] Collector - Emitter Voltage, VCE [V] 1000 Eoff Eon Eoff Tf 100 100 1 10 1 100 10 100 Gate Resistance, RG [Ω ] Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter V GE = ± 15V, RG = 13Ω T C = 25℃ ━━ T C = 125℃ ------ Ton Switching Time [ns] Switching Time [ns] Common Emitter V GE = ± 15V, RG = 13 Ω T C = 25℃ ━━ T C = 125℃ -----100 Tr Toff Tf Toff 100 Tf 10 5 10 15 20 25 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2000 Fairchild Semiconductor International 30 5 10 15 20 25 30 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current SGP15N60RUF Rev. A SGP15N60RUF 1800 Gate - Emitter Voltage, VGE [ V ] Switching Loss [uJ] Eoff 1000 Eoff Eon SGP15N60RUF 15 Common Emitter V GE = ± 15V, RG = 13 Ω T C = 25℃ ━━ T C = 125℃ ------ Common Emitter R L = 20 Ω T C = 25℃ 12 300 V VCC = 100 V 200 V 9 6 3 0 100 5 10 15 20 25 30 0 10 Collector Current, IC [A] 20 30 40 50 Gate Charge, Q g [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 100 100 IC MAX. (Pulsed) Collector Current, IC [A] Collector Current, I C [A] 50us 100us IC MAX. (Continuous) 1㎳ 10 DC Operation 1 Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 10 Safe Operating Area VGE = 20V, TC = 100℃ 1 0.1 0.1 1 10 100 1 1000 10 1000 Fig 16. Turn-Off SOA Characteristics Fig 15. SOA Characteristics Thermal Response, Zthjc [℃/W] 100 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, V CE [V] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Pdm 0.01 t1 t2 single pulse Duty factor D = t1 / t2 Peak Tj = Pdm × Zthjc + TC 1E-3 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2000 Fairchild Semiconductor International SGP15N60RUF Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. F1