QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor Features Description ■ NPN Silicon Phototransistor with internal base-emitter resistance ■ Package Type: Sidelooker ■ Medium Reception Angle, 50° ■ Clear Plastic Package ■ Matching Emitter: QEE213 The QSE243 is a silicon phototransistor with low light level rejection, encapsulated in a medium angle, thin clear plastic sidelooker package. Package Dimensions 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN EMITTER Schematic 0.020 (0.51) SQ. (2X) Collector 0.100 (2.54) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ©2005 Fairchild Semiconductor Corporation QSE243 Rev. 1.0.0 Emitter 1 www.fairchildsemi.com QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor May 2005 Parameter Symbol Rating Unit Operating Temperature TOPR -40 to +100 °C Storage Temperature TSTG -40 to +100 °C (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Collector-Emitter Voltage VCE 30 V Emitter-Collector Voltage VEC 5 V PD 100 mW Soldering Temperature Power Dissipation(1) Electrical/Optical Characteristics (TA =25°C unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Units Peak Sensitivity λPS — 880 — nm Reception Angle Q — ±25 — Deg. Collector Emitter Dark Current VCE = 15 V, Ee = 0 Collector Emitter Breakdown IC = 100 µA mW/cm2, IC = 0.1 mA(5) ID — — 100 nA BVCEO 30 — — V VCE(SAT) — — 0.4 V tr — 15 — µs 15 — Saturation Voltage Ee = 1 Rise Time VCC = 5V, RL = 1000 V Fall Time IC = 1mA tf — Light Current Slope(6) VCE = 5 V, Ee1 = 1 mW/cm2(5) Ee2 = 0.5 mW/cm2(5) ILS 1.0 Knee Point(5,7) VCE = 5 V Eek µs mA/mW/cm2 0.125 mW/cm2 Notes: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. λ = 950 nm GaAs. 6. The slope is defined by (IC1–IC2) / (Ee1–Ee2) where IC1 is the collector current at Ee1 and IC2 the collector current at Ee2. 7. Knee point is defined as being required to increase IC to 50 µA. 2 QSE243 Rev. 1.0.0 www.fairchildsemi.com QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. Around the world.™ OPTOLOGIC OPTOPLANAR™ The Power Franchise PACMAN™ Programmable Active Droop™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 3 QSE243 Rev. 1.0.0 www.fairchildsemi.com QSE243 Low Light Rejection Plastic Silicon Infrared PhotoTransistor TRADEMARKS