MMBT5550 NPN General Purpose Amplifier • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking: 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 140 VCBO Collector-Base Voltage 160 V VEBO Emitter-Base Voltage 6.0 V IC Collector current 600 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 140 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100µA, IE = 0 160 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 6.0 V ICBO Collector Cutoff Current VCB = 100V, IE = 0 VCB = 100V, IE = 0, Ta = 100°C 100 100 nA µA IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA On Characteristics hFE DC Current Gain IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V 60 60 20 250 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 0.15 0.25 V V VBE(sat) Base-Emitter On Voltage IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA 1.0 1.2 V V ©2005 Fairchild Semiconductor Corporation MMBT5550 Rev. A 1 www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier August 2005 Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 10V, f = 100MHz 50 MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 6.0 pF Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 30 pF Thermal Characteristics T =25°C unless otherwise noted a Max. Units PD Symbol Total Device Dissipation Derate above 25°C Parameter 350 2.8 mW mW/°C RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06." Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 1F MMBT5550 SOT-23 7” -- 3,000 2 MMBT5550 Rev. A www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier Electrical Characteristics Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VCESAT - COLLECTOR EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current hFE - TYPICAL PULSED CURRENT GAIN 250 0.5 o 125 C 200 150 0.3 o 25 C 100 o 25 C 0.2 o -40 C 50 0 0.1 o 125 C 0.1 VCE = 5V o - 40 C 0.0 0.2 0.5 1 2 5 10 20 50 100 IC - COLLECTOR CURRENT (mA) Figure 3. Base-Emitter Saturation Voltage vs Collector Current 10 o - 40 C 1.0 0.8 o - 40 C 0.8 o 25 C 0.6 0.6 o 125 C 0.4 o 25 C o 125 C 0.4 0.2 0.2 0.0 1 10 100 VCE = 5V 0.0 0.1 200 1 10 100 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Input and Output Capacitance vs Reverse Voltaget 30 50 f = 1.0 MHz VCB = 100V 25 CAPACITANCE (pF) I CBO- COLLE CTOR CURRENT (nA) 100 IC - COLLECTOR CURRENT (mA) VBEON - BASE EMITTER ON VOLTAGE (V) β = 10 1 Figure 4. Base-Emitter On Voltage vs Collector Current 1.0 VBESAT - BASE EMITTER VOLTAGE (V) β = 10 0.4 10 20 15 C ib 10 5 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) 0 0.1 125 1 10 100 V CE - COLLECTOR VOLTAGE (V) 3 MMBT5550 Rev. A C cb www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier Typical Performance Characteristics MMBT5550 NPN General Purpose Amplifier Typical Performance Characteristics (Continued) Figure 7. Power Dissipation vs Ambient Temperature PD-POWER DISSPATION (mW) 500 400 300 200 100 0 0 25 50 75 100 125 150 0 TEMPERATURE( C) 4 MMBT5550 Rev. A www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier Mechanical Dimensions SOT-23 Dimensions in Millimeters 5 MMBT5550 Rev. A www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 6 MMBT5550 Rev. A www.fairchildsemi.com MMBT5550 NPN General Purpose Amplifier TRADEMARKS