SuperFET TM FCH20N60 / FCA20N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Typ. Rds(on)=0.15Ω • Ultra low gate charge (typ. Qg=55nC) • Low effective output capacitance (typ. Coss.eff=110pF) • 100% avalanche tested D G G D S TO-247 FCH Series TO-3P S FCA Series G DS Absolute Maximum Ratings Symbol Parameter FCH20N60 VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) (Note 1) FCA20N60 Unit 600 V 20 12.5 A A 60 A ± 30 V 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ (Note 3) dv/dt Peak Diode Recovery dv/dt PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 4.5 V/ns 208 1.67 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2006 Fairchild Semiconductor Corporation FCH20N60 / FCA20N60 Rev. A2 1 Typ. Max. Unit -- 0.6 °C/W 0.24 -- -- 41.7 °C/W www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET December 2006 Device Marking Device Package Reel Size Tape Width Quantity FCH20N60 FCH20N60 TO-247 - - 30 FCA20N60 FCA20N60 TO-3P - - 30 FCA20N60 FCA20N60_F109 TO-3PN - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 600 -- -- V VGS = 0V, ID = 250μA, TJ = 150°C -- 650 -- V ID = 250μA, Referenced to 25°C -- 0.6 -- V/°C ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient BVDS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.15 0.19 Ω -- 17 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2370 3080 pF -- 1280 1665 pF Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 95 -- pF -- 65 85 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF VDD = 300V, ID = 20A RG = 25Ω -- 62 135 ns -- 140 290 ns -- 230 470 ns -- 65 140 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 75 98 nC -- 13.5 18 nC -- 36 -- nC 20 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 20A dIF/dt =100A/μs (Note 4) -- 530 -- ns -- 10.5 -- μC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 2 10 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 o 150 C 1 10 o 25 C o -55 C 0 10 * Note 1. VDS = 40V * Notes : 1. 250μs Pulse Test o 2. 250μs Pulse Test 2. TC = 25 C -1 0 10 2 1 10 10 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 10 IDR , Reverse Drain Current [A] RDS(ON) [Ω], 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.4 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.3 VGS = 10V 0.2 VGS = 20V 0.1 1 10 o 150 C 0 10 o 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics 1.6 VDS = 100V Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Crss = Cgd 8000 7000 Capacitance [pF] 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 9000 Coss 6000 5000 * Notes : 1. VGS = 0 V Ciss 2. f = 1 MHz 3000 2000 1.2 Figure 6. Gate Charge Characteristics 10000 4000 1.0 VSD , Source-Drain Voltage [V] ID, Drain Current [A] Crss 1000 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 20A 0 -1 10 0 10 0 1 0 10 3 FCH20N60 / FCA20N60 Rev. A2 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 20 ID, Drain Current [A] ID, Drain Current [A] 100 us 1 ms 1 10 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 10 15 10 5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 10 * N o te s : 0 .2 -1 o 1 . Z θ J C (t) = 0 .6 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 0 .1 3 . T J M - T C = P D M * Z θ JC (t) 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 t2 -2 10 s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FCH20N60 / FCA20N60 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as D UT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V SD V DD B o d y D io d e F o r w a r d V o lta g e D r o p 6 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Mechanical Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters 7 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters 8 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters 9 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 10 FCH20N60 / FCA20N60 Rev. A2 www.fairchildsemi.com FCH20N60 / FCA20N60 600V N-Channel MOSFET TRADEMARKS