FRFET TM FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) D G G DS TO-220 TO-220F GD S FQPF Series FDP Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current FQP13N50CF 500 - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current FQPF13N50CF - Pulsed (Note 1) Unit V 13 13* A 8 8* A 52 52* A ± 30 V 530 mJ VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 13 A EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (TC = 25°C) 4.5 195 - Derate above 25°C 1.56 V/ns 48 W 0.39 W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FQP13N50CF FQPF13N50CF Unit RθJC Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W © 2006 Fairchild Semiconductor Corporation FQP13N50CF / FQPF13N50CF Rev. A1 1 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET May 2006 Device Marking Device Package Reel Size Tape Width Quantity FQP13N50CF FQP13N50CF TO-220 - - 50 FQPF13N50CF FQPF13N50CF TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 500 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V -- -- 10 µA VDS = 400V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 2.0 -- 4.0 V -- 0.43 0.54 Ω -- 15 -- S -- 1580 2055 pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 6.5A gFS Forward Transconductance VDS = 40V, ID = 6.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 180 235 pF -- 20 25 pF -- 25 60 ns -- 100 210 ns -- 130 270 ns -- 100 210 ns -- 43 56 nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 13A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 13A VGS = 10V (Note 4, 5) -- 7.5 -- nC -- 18.5 -- nC 13 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 52 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 13A -- -- 1.4 V trr Reverse Recovery Time 100 160 ns Reverse Recovery Charge VGS = 0V, IS = 13A dIF/dt =100A/µs -- Qrr -- 0.35 -- µC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.6mH, IAS = 13A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQP13N50CF / FQPF13N50CF Rev. A1 2 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Package Marking and Ordering Information FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o -55 C o 25 C 0 10 ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250µs Pulse Test -1 10 -1 10 -1 0 10 1 10 10 2 4 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] VGS = 10V 1.0 VGS = 20V 0.5 1 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 5 10 15 20 25 30 10 35 0.2 0.4 0.6 ID, Drain Current [A] 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS = 100V 10 VGS, Gate-Source Voltage [V] 2500 Capacitance [pF] Ciss 2000 Coss 1500 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 VDS = 250V VDS = 400V 8 6 4 2 ※ Note : ID = 13A 0 -1 10 0 0 10 1 10 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQP13N50CF / FQPF13N50CF Rev. A1 0 3 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 0.0 -100 200 Figure 9-1. Maximum Safe Operating Area for FQP13N50CF 50 100 150 200 Figure 9-2. Maximum Safe Operating Area for FQPF13N50CF 3 3 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) 2 2 10 10 µs 10 µs 100 µs 10 1 10 0 ID, Drain Current [A] ID, Drain Current [A] 0 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 10 -50 o o 10 ※ Notes : 1. VGS = 10 V 2. ID = 6.5 A 0.5 1ms 10ms 100ms DC * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C 3. Single Pulse 100 µs 1ms 10ms 1 10 100ms 0 10 DC * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 10 10 2 10 -2 10 3 0 10 VDS, Drain-SourceVoltage[V] 1 10 2 10 3 10 VDS, Drain-SourceVoltage[V] Figure 10. Maximum Drain Current vs. Case Temperature 14 ID, Drain Current [A] 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [℃] FQP13N50CF / FQPF13N50CF Rev. A1 4 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 11-1. Transient Thermal Response Curve for FQP13N50CF 10 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C (t) = 0 .6 4 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) -1 0 .1 0 .0 5 0 .0 2 0 .0 1 10 10 PDM t1 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Zθ JC(t), Thermal Response Figure 11-2. Transient Thermal Response Curve for FQPF13N50CF 10 D = 0 .5 0 0 .2 ※ N o te s : 1 . Z θ J C (t) = 2 .5 8 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 10 s in g le p u ls e -2 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQP13N50CF / FQPF13N50CF Rev. A1 5 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQP13N50CF / FQPF13N50CF Rev. A1 6 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQP13N50CF / FQPF13N50CF Rev. A1 7 www.fairchildsemi.com TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters FQP13N50CF / FQPF13N50CF Rev. A1 8 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Mechanical Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 0° (3 9.75 ±0.30 MAX1.47 ) #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FQP13N50CF / FQPF13N50CF Rev. A1 9 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Mechanical Dimensions The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 10 FQP13N50CF / FQPF13N50CF Rev. A1 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET TRADEMARKS