QFET FQA8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS(on) = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge (typical 53 nC) • Low Crss (typical 16 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies. • Fast switching • 100% avalanche tested • Improved dv/dt capability D ! " ! " G! " " TO-3P ! S FQA Series G DS Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current FQA8N100C Unit 1000 V 8 5 A A 32 A ±30 V (Note 2) 850 mJ (Note 1) 8 A (Note 1) EAR Repetitive Avalanche Energy (Note 1) 22.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns PD Power Dissipation 225 1.79 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2005 Fairchild Semiconductor Corporation FQA8N100C Rev. A 1 Min. Max. Unit -- 0.56 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FQA8N100C 1000V N-Channel MOSFET September 2005 ® Device Marking Device Package Reel Size Tape Width Quantity FQA8N100C FQA8N100C TO-3P -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 1000 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 1.4 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 1000V, VGS = 0V VDS = 800V, TC = 125°C --- --- 10 100 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 1.2 1.45 Ω -- 8.0 -- S -- 2475 3220 pF -- 195 255 pF -- 16 24 pF -- 50 110 ns -- 95 200 ns -- 122 254 ns -- 80 170 ns On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 4A gFS Forward Transconductance VDS = 50V, ID = 4A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 500V, ID = 8A RG = 25Ω (Note 4, 5) VDS = 800V, ID = 8A VGS = 10V (Note 4, 5) -- 53 70 nC -- 13 -- nC -- 23 -- nC 8 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 32 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 8A -- -- 1.4 V trr Reverse Recovery Time 620 -- ns Reverse Recovery Charge VGS = 0V, IS = 8A dIF/dt =100A/µs -- Qrr -- 5.2 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 25mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FQA8N100C Rev. A 2 www.fairchildsemi.com FQA8N100C 1000V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. 250µ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 VGS = 10V 2.0 1.5 VGS = 20V 1.0 1 10 0 10 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250µ s Pulse Test ※ Note : TJ = 25℃ 0.5 -1 0 5 10 15 20 10 25 0.2 0.4 Figure 5. Capacitance Characteristics 4000 Ciss Coss 1500 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 0 -1 10 1.4 VDS = 500V VDS = 800V 8 6 4 2 ※ Note : ID = 8A 0 10 0 1 10 0 10 20 30 40 50 60 70 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FQA8N100C Rev. A 1.2 VDS = 200V 10 2500 2000 1.0 12 VGS, Gate-Source Voltage [V] Capacitance [pF] 3000 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3500 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] 3 www.fairchildsemi.com FQA8N100C 1000V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µ A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 -50 o ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 200 6 4 2 -2 10 150 8 1 10 100 Figure 10. Maximum Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 2 50 TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area 10 0 o TJ, Junction Temperature [ C] 1 2 10 0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 11. Transient Thermal Response Curve Zθ JC(t), Thermal Response 10 0 D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ JC (t) = 0 .5 6 ℃ /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ JC (t) -1 0 .1 PDM 0 .0 5 t1 0 .0 2 0 .0 1 10 10 t2 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQA8N100C Rev. A 4 www.fairchildsemi.com FQA8N100C 1000V N-Channel MOSFET Typical Performance Characteristics (Continued) FQA8N100C 1000V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp FQA8N100C Rev. A VDS (t) VDD DUT 10V ID (t) tp 5 Time www.fairchildsemi.com FQA8N100C 1000V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQA8N100C Rev. A 6 www.fairchildsemi.com FQA8N100C 1000V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FQA8N100C Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 8 FQA8N100C Rev. A www.fairchildsemi.com FQA8N100C 1000V N-Channel MOSFET TRADEMARKS