AP2306N
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
D
▼ Surface mount package
BVDSS
20V
RDS(ON)
32mΩ
ID
5.3A
S
SOT-23
Description
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
± 12
V
3
5.3
A
3
4.3
A
10
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1,2
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200509032
AP2306N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.1
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A
-
-
27
mΩ
VGS=4.5V, ID=5.3A
-
-
32
mΩ
VGS=2.5V, ID=2.6A
-
-
50
mΩ
VGS=1.8V, ID=1.0A
-
-
90
mΩ
VDS=VGS, ID=250uA
0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=5V, ID=5.3A
-
13
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=55 C)
VDS=16V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS= ± 12V
-
-
±100
nA
ID=5.3A
-
8.7
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.6
-
nC
VDS=15V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=2Ω,VGS=10V
-
18.4
-
ns
tf
Fall Time
RD=15Ω
-
2.8
-
ns
Ciss
Input Capacitance
VGS=0V
-
603
-
pF
Coss
Output Capacitance
VDS=15V
-
144
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
111
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
16.8
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
AP2306N
50
80
5.0V
T A =25 o C
40
5.0V
V G =2.5V
40
20
ID , Drain Current (A)
60
ID , Drain Current (A)
T A =150 o C
4.5V
4.0V
4.5V
30
4.0V
20
V G =2.5V
10
0
0
0
1
2
3
4
5
6
7
0
V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
100
I D =5.3A
I D =5.3A
1.6
T A =25 o C
V G =4.5V
Normalized RDS(ON)
80
RDS(ON) (mΩ )
1
60
1.4
1.2
1.0
40
0.8
0.6
20
1
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
1.6
1.4
10
1.2
T j =25 o C
VGS(th)(V)
IS (A)
T j =150 o C
1
1
0.8
0.6
0.1
0.4
0.01
0.2
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP2306N
I D =5.3A
12
Ciss
V DS =16V
10
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
14
8
Coss
Crss
100
6
4
2
10
0
1
0
5
10
15
20
5
25
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
1
10
0.2
0.1
0.1
0.05
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270 ℃/W
0.001
0.01
0.1
DUTY=0.5
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
RD
VDS
TO THE
OSCILLOSCOPE
D
D
VDS
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
RG
G
0.75x RATED
V
G
S
+
10 V
VGS
+
S
VGS
-
1~ 3 mA
I
G
Fig 11. Switching Time Circuit
I
D
Fig 12. Gate Charge Circuit