MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2N4403 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation Pin Configuration Bottom View C B PNP General Purpose Amplifier E TO-92 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max Units A E OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µAdc, IE=0) Emitter-Base Breakdown Voltage (I E=10µAdc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=3.0Vdc) 40 Vdc 40 Vdc 5.0 Vdc 0.1 µAdc 0.1 µAdc B ON CHARACTERISTICS hFE VCE(sat) VBE(sat) C DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=2.0Vdc) (I C=500mAdc, VCE=2.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) 30 60 100 100 20 0.75 300 0.4 0.75 Vdc 0.95 1.30 Vdc D SMALL-SIGNAL CHARACTERISTICS fT Ccb Ceb Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE=0, f=140kHz) Input Capacitance (VEB=0.5Vdc, IC=0, f=140kHz) 200 MHz 8.5 pF DIMENSIONS 30.0 pF SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width Delay Time (VCC=3.0Vdc, VBE=2.0Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=3.0Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% G 15 20 225 30 ns ns ns ns DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC 2N4403 Base-Emitter ON Voltage vs Collector Current DC Current Gain vs Collector Current 300 1.2 VCE = 10V 250 VCE = 5.0V 1.0 200 0.8 hFE VBE(ON) - (V) TA = 25°C 150 0.6 100 0.4 T = 100°C A 50 0.2 0.1 10 1 0 0.1 100 1.0 10 100 IC - (mA) IC (mA) Pulsed Base Saturation Volatge vs Collector Current Pulsed Collector Saturation Voltage vs Collector Current -1.5 -.5 IC/IB = 10 IC/IB = 10 -1.3 -1.1 VBE(SAT) - (V) -.1 VCE(SAT) - (V) -0.9 -0.7 -.05 -0.5 0 -1.0 -100 -10 -.02 -1.0 -1000 -10 -100 -1000 IC - (mA) IC - (mA) Input and Output Capacitances vs Reverse Bias Voltage 20 TA = 25°C Collector Reverse Current vs Reverse Bias Voltage 100 0 16 CIBO TA = 25°C 100 pF ICES - (µA) 12 8 COBO 10 4 1.0 0 -10 -20 -30 VCE - (V) -40 -50 -60 0 -0.1 -1.0 Volts - (V) www.mccsemi.com -10 MCC 2N4403 Turn On and Turn Off Times vs Collector Current Maximum Power Dissipation vs Ambient Temperature 800 1000 600 toff TO-92 100 PD(MAX) - (mW) T - (ns) 400 ton 10 200 SOT-23 IB1 = IB2 = IC/10 VCC(OFF) = 15V 1.0 10 0 0 50 100 150 200 100 TA - (°C) 1000 IC - (mA) Switching Times vs Collector Current Contours of Constant Gain Bandwidth Product (fT) 1000 IB1 = IB2 = IC/10 -10 -8 100 VCE - (V) -4 T - (ns) -1.0 -.8 ts 10 tf tr -.4 0 -0.1 td 1.0 -1.0 -10 IC - (mA) *25MHz increments from 50 to 200MHz -100 10 www.mccsemi.com 100 IC - (mA) 1000