MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT4401 Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 2X B E SOT-23 A Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max D Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage* (I C=1.0mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10mAdc, IE=0) Emitter-Base Breakdown Voltage (I E=0.1mAdc, IC=0) Base Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) Collector Cutoff Current (VCE=35Vdc, VBE=0.4Vdc) 40 Vdc 60 Vdc 6.0 Vdc 0.1 µAdc 0.1 µAdc C F E H G VCE(sat) VBE(sat) DIMENSIONS DC Current Gain* (I C=0.1mAdc, VCE=1.0Vdc) (I C=1.0mAdc, VCE=1.0Vdc) (I C=10mAdc, VCE=1.0Vdc) (I C=150mAdc, VCE=1.0Vdc) (I C=500mAdc, VCE=1.0Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) 20 40 80 100 40 0.75 300 0.4 0.75 Vdc 0.95 1.2 Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 Ccb Ceb Current Gain-Bandwidth Product (I C=20mAdc, VCE=10Vdc, f=100MHz) Collector-Base Capacitance (VCB=5.0Vdc, IE=0, f=1.0MHz) Emitter-Base Capacitance (VBE=0.5Vdc, IC=0, f=1.0MHz) 250 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 Delay Time (VCC=30Vdc, VBE=0.2Vdc Rise Time IC=150mAdc, IB1=15mAdc) Storage Time (VCC=30Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE .031 .800 MHz 6.5 pF 30.0 pF 15 20 225 30 ns ns ns ns .035 .900 .079 2.000 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Suggested Solder Pad Layout SMALL-SIGNAL CHARACTERISTICS fT J K ON CHARACTERISTICS hFE B .037 .950 www.mccsemi.com .037 .950 inches mm MCC MMBT4401 Base-Emitter ON Voltage vs Collector Current DC Current Gain vs Collector Current 360 1.2 VCE = 10V 300 VCE = 10V 1.0 240 0.8 hFE VBE(ON) - (V) TA = 25°C 180 0.6 120 0.4 TA = 125°C 60 0.2 1 100 10 0 1000 10 1 IC (mA) Collector-Emitter Saturation Volatge vs Collector Current IC/IB = 10 TA = 25°C .20 1000 Base-Emitter Saturation Voltage vs Collector Current 1.1 .24 IC/IB = 10 TA = 25°C 1.0 .16 VCE(SAT) - (V) 100 IC - (mA) 0.9 VBE(SAT) - (V) .12 0.8 .08 0.7 .04 0.6 0 1.0 100 10 0.5 1.0 1000 10 100 1000 IC - (mA) IC - (mA) Input Capacitance vs Reverse Bias Voltage Collector-Base Diode Reverse Current vs Temperature 100 40 f = 1MHz 32 VCB = 20V 10 pF ICBO - (mA) 24 16 Ceb 1.0 8 0.1 0 25 50 75 TJ - (°C) 100 125 150 0 0.1 1.0 Volts - (V) www.mccsemi.com 10 MCC MMBT4401 Maximum Power Dissipation vs Ambient Temperature Output Capacitance vs Reverse Bias Voltage 800 10 f = 1MHz 8 600 TO-92 PD(MAX) - (mW) pF 400 6 4 Ccb 200 SOT-23 2 0 0 50 100 150 200 0 0.1 1.0 TA - (°C) Volts - (V) www.mccsemi.com 10