MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MMBT2907A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation PNP General Purpose Amplifier C Pin Configuration Top View 2F B E SOT-23 Electrical Characteristics @ 25°C Unless Otherwise Specified Symbol Parameter Min Max A Units D OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX ICBO Collector-Emitter Breakdown Voltage* (I C=10mAdc, IB=0) Collector-Base Breakdown Voltage (I C=10µAdc, IE=0) Emitter-Base Breakdown Voltage (I E=10µAdc, IC=0) Base Cutoff Current (VCE=30Vdc, VBE=0.5Vdc) Collector Cutoff Current (VCE=30Vdc, VBE=0.5Vdc) Collector Cutoff Current (VCB=50Vdc, IE=0) (VCB=50Vdc, IE=0, TA=150°C) 60 Vdc 60 Vdc 5.0 Vdc C 50 nAdc 50 nAdc 0.1 10.0 µAdc F VCE(sat) VBE(sat) DC Current Gain* (I C=0.1mAdc, VCE=10Vdc) (I C=1.0mAdc, VCE=10Vdc) (I C=10mAdc, VCE=10Vdc) (I C=150mAdc, VCE=10Vdc) (I C=500mAdc, VCE=10Vdc) Collector-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) Base-Emitter Saturation Voltage (I C=150mAdc, IB=15mAdc) (I C=500mAdc, IB=50mAdc) 75 100 100 100 50 E H G DIMENSIONS 300 0.4 1.6 Vdc 1.3 2.6 Vdc DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 Ccbo Cibo Current Gain-Bandwidth Product (I C=50mAdc, VCE=20Vdc, f=100MHz) Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) Input Capacitance (VEB=2.0Vdc, IC=0, f=1.0MHz) MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 Delay Time (VCC=3.0Vdc, IC=150mAdc, Rise Time IB1=15mAdc) Storage Time (VCC=3.0Vdc, IC=150mAdc Fall Time IB1=IB2=15mAdc) ≤ 300µs, Duty Cycle ≤ 2.0% MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE .031 .800 200 MHz 8.0 pF 30.0 pF 10 40 80 30 ns ns ns ns .035 .900 .079 2.000 SWITCHING CHARACTERISTICS td tr ts tf *Pulse Width MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 Suggested Solder Pad Layout SMALL-SIGNAL CHARACTERISTICS fT J K ON CHARACTERISTICS hFE B .037 .950 www.mccsemi.com .037 .950 inches mm MCC MMBT2907A Base-Emitter ON Voltage vs Collector Current DC Current Gain vs Collector Current 300 1.2 VCE = 10V 250 VCE = 5.0V 1.0 200 0.8 hFE VBE(ON) - (V) TA = 25°C 150 0.6 100 0.4 T = 100°C A 50 0.2 0.1 10 1 0 0.1 100 1.0 10 100 IC - (mA) IC (mA) Pulsed Base Saturation Volatge vs Collector Current Pulsed Collector Saturation Voltage vs Collector Current -1.5 -.5 IC/IB = 10 IC/IB = 10 -1.3 -1.1 VBE(SAT) - (V) -.1 VCE(SAT) - (V) -0.9 -0.7 -.05 -0.5 0 -1.0 -100 -10 -.02 -1.0 -1000 -10 -100 -1000 IC - (mA) IC - (mA) Input and Output Capacitances vs Reverse Bias Voltage 20 TA = 25°C Collector Reverse Current vs Reverse Bias Voltage 100 0 16 CIBO TA = 25°C 100 pF ICES - (µA) 12 8 COBO 10 4 1.0 0 -10 -20 -30 VCE - (V) -40 -50 -60 0 -0.1 -1.0 Volts - (V) www.mccsemi.com -10 MCC MMBT2907A Turn On and Turn Off Times vs Collector Current Maximum Power Dissipation vs Ambient Temperature 800 1000 600 toff TO-92 100 PD(MAX) - (mW) T - (ns) 400 ton 10 200 SOT-23 IB1 = IB2 = IC/10 VCC(OFF) = 15V 1.0 10 0 0 50 100 150 200 100 TA - (°C) 1000 IC - (mA) Switching Times vs Collector Current Contours of Constant Gain Bandwidth Product (fT) 1000 IB1 = IB2 = IC/10 -10 -8 100 VCE - (V) -4 T - (ns) -1.0 -.8 ts 10 tf tr -.4 0 -0.1 td 1.0 -1.0 -10 IC - (mA) *25MHz increments from 50 to 200MHz -100 10 www.mccsemi.com 100 IC - (mA) 1000