MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR3PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME φ3.2±0.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ........................................................................ 3A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ......................... 30mA (10mA) ✽5 Viso ........................................................................ 1500V UL Recognized: File No. E80276 123 0.5 4.5 • • • • • 2.54 2.6 ∗ Measurement point of case temperature 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Contactless AC switches, light dimmer, electric blankets, control of household equipment such as electric fan, solenoid drivers, small motor control, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage ✽1 400 600 V VDSM Non-repetitive peak off-state voltage ✽1 500 720 V Symbol Conditions Parameter IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=107°C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM for fusing Ratings Unit 3.0 A 30 A 3.7 A2s 3 W 0.3 W Peak gate voltage 6 V IGM Peak gate current 0.5 Tj Junction temperature Storage temperature Tstg — Viso Weight Typical value Isolation voltage Ta=25°C, AC 1 minute, T 1 · T2 · G terminal to case A –40 ~ +125 °C –40 ~ +125 °C 2.0 g 1500 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=4.5A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V 1.5 ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — IFGT ! ! — — 30 ✽5 mA — — 30 ✽5 mA — — 30 ✽5 mA 0.2 — — V — — 4.5 °C/ W ✽3 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case ✽4 (dv/dt) c Critical-rate of rise of off-state commutating voltage V ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. ✽4. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. ✽5. High sensitivity (I GT≤10mA) is also available. Voltage class VDRM (V) 8 400 (dv/dt) c Min. SUPPLY VOLTAGE 1. Junction temperature Tj=125°C 5 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit 600 V/µs TIME 2. Rate of decay of on-state commutating current (di/dt)c=–1.5A/ms MAIN CURRENT 3. Peak off-state voltage VD=400V MAIN VOLTAGE (di/dt)c TIME TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 40 TC = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 102 7 5 3 2 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 PGM = 3W PG(AV) = 0.3W 101 7 5 3 2 IGM = 0.5A VGT 100 7 5 3 2 IRGT I IFGT I, IRGT III VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 5.0 130 4.5 120 4.0 360° 3.5 CONDUCTION 3.0 RESISTIVE, INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE IRGT III 102 IFGT I, IRGT I 7 5 4 3 2 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE 110 100 CURVES APPLY REGARDLESS 90 OF CONDUCTION ANGLE 80 70 60 360° CONDUCTION 50 RESISTIVE, 40 INDUCTIVE LOADS 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE 80 60 40 20 0 1 2 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 101 7 5 3 2 60 RMS ON-STATE CURRENT (A) 104 7 5 3 2 102 7 5 3 2 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE DISTRIBUTION T2+, G– TYPICAL EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, T2 , G TYPICAL T2– , G– EXAMPLE + + 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) LACHING CURRENT (mA) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 100 (%) 0 NATURAL CONVECTION CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 8 3 4 5 6 7 AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED 140 ALUMINUM AND GREASED 120 120 t2.3 120 100 100 t2.3 100 60 60 t2.3 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) AMBIENT TEMPERATURE (°C) INSULATED TYPE, PLANAR PASSIVATION TYPE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3PM LOW POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 100 80 60 40 III QUADRANT 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 COMMUTATION CHARACTERISTICS 102 VOLTAGE WAVEFORM TYPICAL 7 t EXAMPLE 5 (dv/dt)C VD Tj = 125°C 4 IT = 4A 3 CURRENT WAVEFORM (di/dt)C τ = 500µs IT 2 VD = 200V τ t f = 3Hz 101 7 I QUADRANT 5 4 III QUADRANT 3 MINIMUM 2 CHARAC- CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) INSULATED TYPE, PLANAR PASSIVATION TYPE TERISTICS VALUE 100 0 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω TYPICAL EXAMPLE IRGT III IRGT I A 6V V IFGT I TEST PROCEDURE 1 102 7 5 4 3 2 A 6V RG V RG TEST PROCEDURE 2 6Ω A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Feb.1999