MITSUBISHI BCR1AM-12

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR1AM-12
Dimensions
in mm
φ5.0 MAX
5.0 MAX
4.4
VOLTAGE
CLASS
TYPE
NAME
2
3
12.5 MIN
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
•
•
•
•
3.9 MAX
1.3
1.25 1.25
1 3 2
IT (RMS) ........................................................................ 1A
VDRM ....................................................................... 600V
IFGT !, IRGT !, IRGT # ............................................. 5mA
IFGT # ..................................................................... 10mA
JEDEC : TO-92
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan, vending machines,
trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
Unit
12
VDRM
Repetitive peak off-state voltage ✽1
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
720
V
Conditions
Parameter
Symbol
IT (RMS)
RMS on-state current
Commercial frequency, sine full wave 360° conduction, Tc=56°C ✽4
ITSM
Surge on-state current
60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Ratings
Unit
1.0
A
10
A
0.41
A2s
1
W
0.1
W
Peak gate voltage
6
V
IGM
Peak gate current
1
Tj
Junction temperature
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
0.23
g
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied
—
—
1.0
mA
VTM
On-state voltage
Tc=25°C, ITM=1.5A, Instantaneous measurement
—
—
1.6
V
VFGT !
!
—
—
2.0
V
VRGT !
@
—
—
2.0
V
—
—
2.0
V
VRGT #
Gate trigger voltage ✽2
#
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
VFGT #
$
—
—
2.0
IFGT !
!
—
—
5
mA
—
—
5
mA
—
—
5
mA
—
—
10
mA
0.1
—
—
V
—
—
50
°C/ W
✽3
—
—
V/µs
IRGT !
IRGT #
@
Gate trigger current ✽2
#
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
$
IFGT #
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
R th (j-c)
Thermal resistance
Junction to case ✽4
(dv/dt) c
Critical-rate of rise of off-state
commutating voltage
V
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
Voltage
class
VDRM
(V)
(dv/dt) c
Min.
Commutating voltage and current waveforms
(inductive load)
Test conditions
Unit
SUPPLY
VOLTAGE
1. Junction temperature
Tj =125°C
12
2
600
V/µs
2. Rate of decay of on-state commutating current
(di/dt)c=–0.5A/ms
TIME
MAIN CURRENT
(di/dt)c
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD =400V
TIME
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
7
5
3
2
10
TC = 25°C
101
7
5
3
2
100
7
5
3
2
10–1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
102
8
6
4
2
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
PGM =
1W
PG(AV)
= 0.1W
VGM = 6V
100
7
5
IFGT I
3 IRGT I
2 IRGT III
10–1
7
5
3
2
IGM = 1A
IFGT III
VGD = 0.1V
10–2
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
100 (%)
101
7
5
3
2
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
GATE VOLTAGE (V)
GATE CHARACTERISTICS
103
7
5
4
3
2
TYPICAL EXAMPLE
IFGT I, IRGT I
102
7
5
4
3
2
IRGT III, IFGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TYPICAL EXAMPLE
VFGT I, VRGT I
102
7
5
4
3
2
VRGT III, VFGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
103
7
5
4
3
2
102
7
5
3
2
JUNCTION TO CASE
101
7
5
3
2
100
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
2.0
160
1.6
1.2
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
0.8
0.4
0
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
103
7
5
3
2
JUNCTION TO AMBIENT
JUNCTION TEMPERATURE (°C)
0
0.4
0.8
1.2
1.6
RMS ON-STATE CURRENT (A)
2.0
CASE TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
140
120
100
360°
CONDUCTION
80
60
40
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-12
LOW POWER USE
100
60
40
20
100 (%)
0
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
RESISTIVE,
INDUCTIVE
LOADS
80
103
7
5
4
3
2
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
T2+, G–
TYPICAL
EXAMPLE
 T2+, G+
 – – TYPICAL
 T2 , G
 T2– , G+ EXAMPLE

100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
TYPICAL EXAMPLE
100 (%)
JUNCTION TEMPERATURE (°C)
140
160
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
100 (%)
104
7
5
3
2
JUNCTION TEMPERATURE (°C)
101
–60 –40 –20 0 20 40 60 80 100 120 140
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
105
7 TYPICAL EXAMPLE
5
3
2
RMS ON-STATE CURRENT (A)
102
7
5
4
3
2
160
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
NATURAL CONVECTION
120 NO FINS
LACHING CURRENT (mA)
AMBIENT TEMPERATURE (°C)
GLASS PASSIVATION TYPE
TYPICAL EXAMPLE
Tj = 125°C
120
I QUADRANT
100
80
60
III QUADRANT
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-12
LOW POWER USE
GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10–1 –1
10
2 3 4 5 7 100
2 3 4 5 7 101
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
100 (%)
101
TC = 125°C
7 TYPICAL EXAMPLE
IT = 1A
5
τ = 500µs
4
VD = 200V
3
2
III QUADRANT
MINIMUM
CHARAC100
TERISTICS
7
VALUE
5
4
I QUADRANT
3
2
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
COMMUTATION CHARACTERISTICS
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
IFGT I
IFGT III
IRGT III
IRGT I
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω
6Ω
A
6V
A
6V
RG
V
TEST PROCEDURE 1
6Ω
RG
V
TEST PROCEDURE 2
6Ω
A
6V
V
RG
TEST PROCEDURE 3
A
6V
V
RG
TEST PROCEDURE 4
Feb.1999