MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING BCR20A, BCR20B, BCR20C, BCR20E Dimensions in mm 1 φ2.0 MIN 3 φ11 MAX 24 MAX 3 MAX φ8.7 MAX 9 MAX 2 17.5 MAX 1 3 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL • IT (RMS) ...................................................................... 20A • VDRM ..............................................................400V/500V • IFGT !, IRGT !, IRGT # ........................................... 30mA BCR20A APPLICATION Contactless AC switches, light dimmer, on/off control of traffic signals, on/off control of copier lamps, microwave ovens, solid state relay MAXIMUM RATINGS Symbol Parameter Voltage class 8 12 Unit VDRM Repetitive peak off-state voltage ✽1 400 500 V VDSM Non-repetitive peak off-state voltage ✽1 600 700 V Symbol Parameter Conditions IT (RMS) RMS on-state current Commercial frequency, sine full wave, 360° conduction ITSM Surge on-state current I2t I2t for fusing PGM PG (AV) VGM Ratings BCR20A, B, C Tc =98°C BCR20E Tb=64°C Unit 20 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 220 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 203 A2s Peak gate power dissipation 5.0 W Average gate power dissipation 0.5 W Peak gate voltage 10 V IGM Peak gate current 2.0 Tj Junction temperature –20 ~ +125 °C Tstg Storage temperature –20 ~ +125 °C A ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE MAXIMUM RATINGS (continue) Symbol Parameter — Weight (Typical value) — Soldering temperature Conditions 3.5 BCR20B 9.0 BCR20C 9.0 BCR20E — Viso Unit Ratings BCR20A g 11 BCR20A only, 10 sec. °C 230 kg·cm 30 Mounting torque BCR20C only Isolated voltage BCR20E only, Ta=25°C, AC 1 minute, T2 terminal to base 2.94 N·m 1500 V ELECTRICAL CHARACTERISTICS Symbol IDRM VTM Parameter Min. Typ. Max. Unit Repetitive peak off-state current Tj=125°C, V DRM applied — — 3.0 mA On-state voltage Tc=25°C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Limits Test conditions Gate trigger voltage ✽2 @ Tj=25°C, VD =6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 30 mA — — 30 mA — — 30 mA 0.2 — — V Junction to case (BCR20A, BCR20B, BCR20C) — — 1.1 °C/W Junction to base (BCR20E) — — 2.4 °C/W ✽3 — — V/µs IRGT ! Gate trigger current ✽2 @ VGD Tj=125°C, VD=1/2VDRM Gate non-trigger voltage R th (j-c) R th (j-b) (dv/dt) c Tj=25°C, VD =6V, RL=6Ω, RG=330Ω # IRGT # Thermal resistance Critical-rate of rise of off-state commutating voltage ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. Voltage class VDRM (V) 8 400 (dv/dt) c Symbol Min. R — Unit 1. Junction temperature Tj =125°C L 10 V/µs R 10 Test conditions — 2. Rate of decay of on-state commutating current (di/dt)c=–10A/ms 3. Peak off-state voltage VD =400V 600 L 10 Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE MAIN CURRENT TIME (di/dt)c TIME MAIN VOLTAGE (dv/dt)c TIME VD Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING Dimensions in mm BCR20B BCR20C BCR20E 5.3 MAX 20 MAX (φ16) 23±0.2 φ33 MAX 1 φ2.0 MIN 2 M6 × 1. 0 1 3 φ8.7 MAX 22.5 MAX 22 MAX 21 MAX 26 MAX 3 MIN φ8.7 MAX φ2.5 MIN φ2.0 MIN 1.8 MAX 12 MAX 2 3 2 11 MAX 10 MAX 19.5 MAX φ8.7 MAX 25.5 MAX 1.8 MAX 10.5 MAX 1 1.9 MIN T1 TERMINAL T2 TERMINAL GATE 3 TERMINAL φ2.0 MIN 19 MAX (16.2) 23±0.2 33 MAX 2 1 2 3 14 20 MAX 1 3 21 MAX 2-φ3.2 MIN 2-φ3.2 MIN PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 320 7 TC = 25°C 5 Tb = 25°C 3 2 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 102 7 5 3 2 101 7 5 3 2 280 240 200 160 120 80 40 0 100 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 GATE VOLTAGE (V) 3 2 VGM = 10V 101 PG(AV) = 0.5W PGM = 5.0W 7 5 3 VGT = 1.5V 2 IGM = 2A 100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) GATE TRIGGER • CURRENT VOLTAGE (Tj = t°C) GATE TRIGGER • CURRENT VOLTAGE (Tj = 25°C) GATE CHARACTERISTICS 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 100 (%) ON-STATE VOLTAGE (V) 2 3 4 5 7 101 GATE TRIGGER CURRENT·VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ 180 160 GATE TRIGGER CURRENT 140 120 100 80 60 GATE TRIGGER VOLTAGE 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 103 1.6 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR20E) 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 50 160 45 140 BASE TEMPERATURE (°C) CASE TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) (BCR20A, B, C) 40 360° 35 CONDUCTION RESISTIVE, 30 INDUCTIVE 25 LOADS 20 15 10 5 0 0 4 8 12 16 20 24 28 32 BCR20A, BCR20B, BCR20C BCR20E 120 100 80 60 40 CURVES APPLY REGARDLESS 20 OF CONDUCTION ANGLE 0 0 4 8 12 16 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20A) 160 160 160 t4.0 120 120 t3.0 140 80 80 t2.0 120 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 80 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER : MOUNTING PLATE WITHOUT GREASE 60 40 20 0 0 4 8 12 16 20 24 28 RMS ON-STATE CURRENT (A) 20 24 28 32 RMS ON-STATE CURRENT (A) 32 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20B) 160 AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) RMS ON-STATE CURRENT (A) 100 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 160 160 t4.0 120 100 120 120 t3.0 80 80 80 t2.0 60 NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : INSULATED PLATE WITH GREASE 40 20 0 0 4 8 12 16 20 24 28 32 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR20A, BCR20B, BCR20C, BCR20E MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 160 160 t4.0 120 100 120 120 t3.0 80 80 80 t2.0 60 NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : MICA PLATE WITH GREASE 40 20 0 0 4 8 12 16 20 24 28 32 RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20E) 160 ALL FINS ARE BLACK PAINTED AMBIENT TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20C) 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 120 160 160 t4.0 100 120 120 t3.0 80 80 t2.0 80 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 60 40 20 0 0 4 8 12 16 20 24 28 32 RMS ON-STATE CURRENT (A) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω A 6V A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V V RG TEST PROCEDURE 3 Feb.1999