MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 2.6 ± 0.2 ➀➁➂ ➁ .................................................................. 3A ● VDRM ...................................................... 400V / 600V ● IFGT ! , IRGT ! , I RGT # ................... 15mA (10mA) ✽2 ● IT (RMS) ● UL ➀ 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL Recognized : File No. E80271 TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol Voltage class Parameter voltage✽1 V DRM Repetitive peak off-state V DSM Non-repetitive peak off-state voltage✽1 Symbol Parameter 8 12 400 500 600 720 Conditions I T (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=111°C I TSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I 2t I 2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM I GM Peak gate voltage Peak gate current Tj T stg Junction temperature Storage temperature — Viso Weight Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case Unit V V Ratings Unit 3 30 A A 3.7 A2s 3 W 0.3 6 W V 0.5 –40 ~ +125 A °C –40 ~ +125 2.0 °C g 2000 V ✽1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. — Typ. — Max. 2.0 I DRM Repetitive peak off-state current Tj=125°C, VDRM applied V TM V FGT ! On-state voltage Tc=25°C, ITM=4.5A, Instantaneous measurement — — — — 1.5 1.5 V RGT ! V RGT # Gate trigger voltage ✽2 Tj=25°C, V D=6V, RL=6Ω, RG=330Ω # — — — — 1.5 1.5 ! — — 15 ✽2 — — — — 15 ✽2 15 ✽2 — — — 4.0 — 50 ! @ I FGT ! I RGT ! Gate trigger I RGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 0.2 — Rth (j-a) Thermal resistance Junction to ambient — current ✽2 @ Tj=25°C, V D=6V, RL=6Ω, RG=330Ω # Unit mA V V V V mA mA mA V °C/ W °C/ W ✽2. High sensitivity (I GT≤ 10mA) is also available. (IGT item ➀) ✽3. The contact thermal resistance R th (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES 102 7 5 3 2 RATED SURGE ON-STATE CURRENT 40 TC = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM 102 GATE VOLTAGE (V) 7 5 3 2 PGM = 3W 101 7 5 3 VGT 2 PG(AV) = 0.3W IGM = 0.5A 100 7 5 IRGT I 3 2 IFGM I , IRGM III VGD = 0.2V 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 100 (%) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 102 7 5 4 3 2 IFGT I , IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE CURRENT (mA) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 102 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 5.0 4.5 4.0 360° 3.5 CONDUCTION RESISTIVE, 3.0 INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CASE TEMPERATURE (°C) 120 110 CURVES APPLY REGARDLESS 100 OF CONDUCTION 90 ANGLE 80 70 60 360° CONDUCTION 50 RESISTIVE, 40 INDUCTIVE LOADS 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 AMBIENT TEMPERATURE (°C) 130 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 100 80 60 20 0 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 100 (%) 7 5 7 5 4 3 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 3 4 5 6 7 8 TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 TYPICAL EXAMPLE 2 2 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 1 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 LACHING CURRENT (mA) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) RMS ON-STATE CURRENT (A) 0 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) 80 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 40 RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 120 120 t2.3 100 100 t2.3 60 60 t2.3 120 3 2 102 7 5 3 2 101 7 5 DISTRIBUTION ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, T2+, G– TYPICAL EXAMPLE 3 + + 2 T2–, G – TYPICAL T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) TYPICAL EXAMPLE 100 (%) 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C 140 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 120 I QUADRANT 100 80 III QUADRANT 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 103 7 5 4 3 6Ω TYPICAL EXAMPLE IRGT III IRGT I A 6V IFGT I 2 RG V 102 V RG TEST PROCEDURE TEST PROCEDURE 7 5 4 3 A 6V 6Ω 2 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE Feb.1999