MITSUBISHI BCR2PM

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
BCR2PM
Dimensions
in mm
10.5 MAX
2.8
17
8.5
5.0
1.2
5.2
TYPE
NAME
φ3.2 ± 0.2
3.6
1.3 MAX
13.5 MIN
0.8
2.54
2.54
➀➁➂
0.5
2.6
4.5
VOLTAGE
CLASS
➁
¡IT (RMS) ........................................................................ 2A
¡VDRM ..............................................................400V/600V
¡IRGT !, IRGT # ....................................................... 10mA
➀
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ ➂ GATE TERMINAL
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8
12
Unit
VDRM
Repetitive peak off-state voltage ✽1
400
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
500
720
V
Conditions
Parameter
Symbol
Ratings
Unit
IT (RMS)
RMS on-state current
Commercial frequency, sine full wave 360° conduction
2
A
ITSM
Surge on-state current
60Hz sinewave 1 full cycle, peak value, non-repetitive
10
A
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
0.41
A2s
1
W
0.1
W
Peak gate voltage
6
V
IGM
Peak gate current
1
Tj
Junction temperature
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied
—
—
0.5
mA
VTM
On-state voltage
Ta=25°C, I TM=1.5A, Instantaneous measurement
—
—
1.6
V
—
—
2.0
V
#
—
—
2.0
V
@
—
—
10
mA
mA
VRGT !
@
Gate trigger voltage ✽2
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
VRGT #
IRGT !
Gate trigger
current ✽2
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
#
IRGT #
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
R th (j-a)
Thermal resistance
Junction to ambient, Natural convection
—
—
10
0.1
—
—
V
—
—
40
°C/ W
✽2. Measurement using the gate trigger characteristics measurement circuit.
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
A
6V
RG
V
TEST PROCEDURE 2
A
6V
V
RG
TEST PROCEDURE 3
PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT
10
Tj = 25°C
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
MAXIMUM ON-STATE CHARACTERISTICS
102
7
5
3
2
9
8
7
6
5
4
3
2
1
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
GATE CHARACTERISTICS
VGM = 6V
100
7
5
3
2
PG(AV)
= 0.1W
VGT
IGM = 1A
IRGT I, IRGT III
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
100 (%)
10–1
7
VGD = 0.1V
5
0
1
10 2 3 5 7 10 2 3 5 7 102 2 3 5 7 103
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
PGM = 1W
101
7
5
3
2
103
7
5
4
3
2
TYPICAL EXAMPLE
IRGT I , IRGT III
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
103
7
5
4
3
2
TYPICAL EXAMPLE
VRGT I
102
7
5
4
3
2
VRGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE VOLTAGE (V)
3
2
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
NATURAL CONVECTION
NO FINS
PRINT BOARD
 t = 1.6mm

 SOLDER LAND : φ2mm
100
7
5
3
2
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
CONDUCTION TIME
(CYCLES AT 60Hz)
JUNCTION TEMPERATURE (°C)
1.8
AMBIENT TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
MAXIMUM ON-STATE POWER
DISSIPATION
1.6
1.4 360°
CONDUCTION
1.2 RESISTIVE,
1.0 INDUCTIVE
LOADS
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
RMS ON-STATE CURRENT (A)
1.4
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
PRINT BOARD
 t = 1.6mm

120
 SOLDER LAND : φ2mm
100
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR2PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
104
7
5
3
2
103
7
5
3
2
100 (%)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
DISTRIBUTION
100 (%)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
T2+, G–
TYPICAL
EXAMPLE
T2–, G–
TYPICAL
EXAMPLE
0
40
80
120
160
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
160
140
102
7
5
4
3
2
JUNCTION TEMPERATURE (°C)
101
7
5
3
2
100
7
5
3
2
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
Tj = 125°C
120
I QUADRANT
100
80
60
III QUADRANT
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
102
7
5
3
2
103
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
102
–60 –40 –20 0 20 40 60 80 100 120 140
10-1
–40
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
100 (%)
TYPICAL EXAMPLE
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
105
7
5
3
2
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
LACHING CURRENT (mA)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
103
7
5
4
3
2
TYPICAL EXAMPLE
IRGT I
102
7
5
4
3
2
IRGT III
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999