MITSUBISHI BCR10CS

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
4
Dimensions
in mm
10.5 MAX
∗
1.3
VOLTAGE
CLASS
+0.3
0 –0
(1.5)
3.0 –0.5
+0.3
1.5 MAX
8.6±0.3
9.8±0.5
TYPE
NAME
4.5
1.5 MAX
BCR10CS
1
5
0.5
1 2 3
24
• IT (RMS) ...................................................................... 10A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) ✽5
1
1
2
3 3
4
2.6±0.4
4.5
0.8
∗ Measurement
point of case
temperature
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
TO-220S
APPLICATION
Solid state relay, hybrid IC
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8
12
Unit
VDRM
Repetitive peak off-state voltage ✽1
400
600
V
VDSM
Non-repetitive peak off-state voltage ✽1
500
720
V
Conditions
Parameter
Symbol
IT (RMS)
RMS on-state current
Commercial frequency, sine full wave 360° conduction, Tc =103°C
ITSM
Surge on-state current
60Hz sinewave 1 full cycle, peak value, non-repetitive
I2t
I2t for fusing
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Ratings
Unit
10
A
100
A
41.6
A2s
5
W
0.5
W
Peak gate voltage
10
V
IGM
Peak gate current
2
Tj
Junction temperature
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
1.2
g
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Limits
Test conditions
Parameter
Min.
Typ.
Max.
Unit
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied
—
—
2.0
mA
VTM
On-state voltage
Tc=25°C, ITM=15A, Instantaneous measurement
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
1.5
!
VFGT !
VRGT !
Gate trigger voltage ✽2
@
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
VRGT #
#
—
—
IFGT !
!
—
—
30 ✽5
mA
—
—
30 ✽5
mA
—
—
30 ✽5
mA
0.2
—
—
V
—
—
1.8
°C/ W
✽3
—
—
V/µs
IRGT !
Gate trigger current ✽2
@
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
#
IRGT #
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
R th (j-c)
Thermal resistance
Junction to case ✽4
(dv/dt) c
Critical-rate of rise of off-state
commutating voltage
V
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance R th (c-f) in case of greasing is 1.0°C/W.
✽5. High sensitivity (I GT≤20mA) is also available. (IGT item 1)
Voltage
class
VDRM
(V)
8
400
(dv/dt) c
Symbol
Min.
R
—
SUPPLY
VOLTAGE
1. Junction temperature
Tj =125°C
L
10
V/µs
R
12
Commutating voltage and current waveforms
(inductive load)
Test conditions
Unit
—
2. Rate of decay of on-state commutating current
(di/dt)c=–5A/ms
3. Peak off-state voltage
VD =400V
600
L
TIME
MAIN CURRENT
(di/dt)c
TIME
MAIN
VOLTAGE
TIME
(dv/dt)c
10
VD
PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT
MAXIMUM ON-STATE CHARACTERISTICS
100
7
5
3
2
101
7
5
3
2
Tj = 125°C
Tj = 25°C
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
102
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
102
7
5
3
2
VGM = 10V
101
PGM = 5W
PG(AV) =
7
5
0.5W
3 VGT = 1.5V
2
IGM = 2A
100
7
5
3
2
IRGT I IFGT I, IRGT III
VGD = 0.2V
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
GATE VOLTAGE (V)
GATE CHARACTERISTICS
103
7
5
4
3
2
102
7
5
4
3
2
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
101
–60 –40 –20 0 20 40 60 80 100 120 140
TRANSIENT THERMAL IMPEDANCE (°C/W)
102
7
5
4
3
2
102 2 3 5 7 103 2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
32
160
28
140
CASE TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE (Tj = t°C)
GATE TRIGGER VOLTAGE (Tj = 25°C)
ON-STATE POWER DISSIPATION (W)
TYPICAL EXAMPLE
24 360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE
16 LOADS
12
8
4
0
IFGT I
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
0
IRGT I, IRGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
GATE CURRENT (mA)
103
7
5
4
3
2
TYPICAL EXAMPLE
2
4
6
8
10
12
14
RMS ON-STATE CURRENT (A)
16
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
80
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
0
2
4
6
8
10
12
14
60
40
20
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
HOLDING CURRENT (Tj = t°C)
HOLDING CURRENT (Tj = 25°C)
104
7
5
3
2
103
7
5
3
2
103
7
5
4
3
2
TYPICAL EXAMPLE
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
102
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
DISTRIBUTION
100 (%)
JUNCTION TEMPERATURE (°C)
103
7
5
3
2
T2+, G–
TYPICAL
EXAMPLE
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
102
7
5
3
2
100
–40
80
RMS ON-STATE CURRENT (A)
105
7 TYPICAL EXAMPLE
5
3
2
101
7
5
3
2
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
0
16
BREAKOVER VOLTAGE (Tj = t°C)
BREAKOVER VOLTAGE (Tj = 25°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)
REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)
LACHING CURRENT (mA)
60 60 t2.3
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE COPPER
AND ALUMINUM
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
120 120 t2.3
100
100 100 t2.3
100 (%)
AMBIENT TEMPERATURE (°C)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
T2 , G  TYPICAL

T2– , G–  EXAMPLE
+
+
0
40
80
120
JUNCTION TEMPERATURE (°C)
160
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR10CS
MEDIUM POWER USE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
140
120
#2
100
III QUADRANT
80
60
#1
40
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
100 (%)
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
COMMUTATION CHARACTERISTICS
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
103
7
5
4
3
2
(dv/dt)C
t
VD
CURRENT WAVEFORM
(di/dt)C
IT
τ
t
101
I QUADRANT
7
5
3 MINIMUM
2 CHARACIII QUADRANT
100 TERISTICS
7 VALUE
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
VOLTAGE WAVEFORM
3 TYPICAL
2 EXAMPLE
102 Tj = 125°C
7 IT = 4A
5 τ = 500µs
3 VD = 200V
2 f = 3Hz
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
TYPICAL EXAMPLE
IFGT I
IRGT I
IRGT III
A
6V
V
TEST PROCEDURE 1
102
7
5
4
3
2
A
6V
RG
V
RG
TEST PROCEDURE 2
6Ω
A
6V
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
V
RG
TEST PROCEDURE 3
Feb.1999