MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CM OUTLINE DRAWING Dimensions in mm 3.2±0.2 4.5 1.3 4 7.0 16 MAX 10.5 MAX ∗ TYPE NAME VOLTAGE CLASS φ3.6±0.2 12.5 MIN 3.8 MAX 1.0 0.8 2.5 0.5 2.6 4.5 2.5 123 ∗ Measurement point of case temperature 24 • IT (RMS) ........................................................................ 8A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=105°C✽3 ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg 8 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 80 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 26 A2s 5 W 0.5 W Storage temperature — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 2.0 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=12A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V Rth (j-c) Thermal resistance Junction to case ✽3 ✽4 — — 2.0 °C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125°C 10 — — V/µs ✽5 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–4.0A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 100 7 5 3 2 101 7 5 3 2 Tj = 125°C Tj = 25°C 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 100 (%) PG(AV) = 0.5W VGM = 10V PGM = 5W 101 7 5 3 2 IGM = 2A VGT = 1.5V 100 7 5 3 2 IFGT I IRGT I, IRGT III 10–1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) 102 7 5 4 3 2 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 160 14 140 CASE TEMPERATURE (°C) 100 (%) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) ON-STATE POWER DISSIPATION (W) TYPICAL EXAMPLE 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 IRGT I IFGT I JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0 IRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE 2 4 6 8 10 12 14 RMS ON-STATE CURRENT (A) 16 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE 100 100 t2.3 80 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 0 2 4 6 8 10 12 14 AMBIENT TEMPERATURE (°C) 120 120 t2.3 100 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 100 (%) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 103 7 5 3 2 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE DISTRIBUTION 100 (%) JUNCTION TEMPERATURE (°C) 102 7 5 3 2 100 –40 60 RMS ON-STATE CURRENT (A) 104 7 5 3 2 101 7 5 3 2 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 16 T2+, G– TYPICAL EXAMPLE BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) LACHING CURRENT (mA) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 (%) AMBIENT TEMPERATURE (°C) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C T2 , G TYPICAL T2– , G– EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 140 120 100 80 60 III QUADRANT 40 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C COMMUTATION CHARACTERISTICS 7 5 3 2 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TIME (di/dt)c TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME VD 101 7 5 MINIMUM CHARAC3 TERISTICS 2 VALUE I QUADRANT 2 3 5 7 101 5 7 102 2 3 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 103 7 5 4 3 2 TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz III QUADRANT 100 7 100 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH SUPPLY VOLTAGE 6Ω TYPICAL EXAMPLE IFGT I A 6V IRGT I IRGT III 102 7 5 4 3 2 A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6Ω A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR8CM OUTLINE DRAWING Dimensions in mm 3.2±0.2 4.5 1.3 4 7.0 16 MAX 10.5 MAX ∗ TYPE NAME VOLTAGE CLASS φ3.6±0.2 12.5 MIN 3.8 MAX 1.0 0.8 2.5 0.5 2.6 4.5 2.5 123 ∗ Measurement point of case temperature 24 • IT (RMS) ........................................................................ 8A • VDRM ....................................................................... 600V • IFGT !, IRGT !, IRGT # ............................................ 20mA 1 1 2 33 4 T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Contactless AC switches, light drimmer, electric flasher unit, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage ✽1 600 V VDSM Non-repetitive peak off-state voltage ✽1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=130°C✽3 ITSM Surge on-state current I2t I2t for fusing PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg 8 A 60Hz sinewave 1 full cycle, peak value, non-repetitive 80 A Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 26 A2s 5 W 0.5 W Storage temperature — Weight Typical value A –40 ~ +150 °C –40 ~ +150 °C 2.0 g ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=150°C, VDRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM=12A, Instantaneous measurement — — 1.5 V — — 1.5 V — — 1.5 V ! VFGT ! VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω VRGT # # — — 1.5 V IFGT ! ! — — 20 mA — — 20 mA — — 20 mA 0.2/0.1 — — V — — 2.0 °C/ W 10/1 — — V/µs IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # IRGT # VGD Gate non-trigger voltage Tj=125°C/150°C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case ✽3 ✽4 (dv/dt)c Critical-rate of rise of off-state commutating voltage ✽5 Tj=125°C/150°C ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. ✽5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125°C/150°C MAIN CURRENT 2. Rate of decay of on-state commutating current (di/dt)c=–4.0A/ms TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 100 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 7 5 3 2 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 100 (%) PG(AV) = 0.5W VGM = 10V PGM = 5W 101 7 5 3 2 IGM = 2A VGT = 1.5V 100 7 5 3 2 10–1 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE VOLTAGE (V) 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 TRANSIENT THERMAL IMPEDANCE (°C/W) 102 7 5 4 3 2 102 2 3 5 7 103 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (°C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 160 14 140 CASE TEMPERATURE (°C) 100 (%) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) ON-STATE POWER DISSIPATION (W) TYPICAL EXAMPLE 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 IFGT I, IRGT I JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0 IRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE 2 4 6 8 10 12 14 RMS ON-STATE CURRENT (A) 16 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 120 120 t2.3 100 100 100 t2.3 CURVES 80 APPLY 60 60 t2.3 REGARDLESS 60 OF CONDUCTION ANGLE 40 RESISTIVE, INDUCTIVE 20 LOADS NATURAL CONVECTION 0 100 (%) 0 2 4 6 8 10 12 14 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 103 7 5 4 3 TYPICAL EXAMPLE 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 3 2 + DISTRIBUTION 100 (%) JUNCTION TEMPERATURE (°C) – T2 , G TYPICAL EXAMPLE 102 7 5 3 2 BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) 40 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 7 5 3 2 –40 60 RMS ON-STATE CURRENT (A) 105 100 80 RMS ON-STATE CURRENT (A) 7 5 3 2 101 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION 140 NO FINS,CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE 100 LOADS 0 16 106 LACHING CURRENT (mA) AMBIENT TEMPERATURE (°C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) AMBIENT TEMPERATURE (°C) The product guaranteed maximum junction temperature 150°C (See warning.) T2 , G TYPICAL T2– , G– EXAMPLE + + 0 40 80 120 JUNCTION TEMPERATURE (°C) 160 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 100 80 60 III QUADRANT 40 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 100 (%) 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) 160 TYPICAL EXAMPLE Tj = 150°C 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 120 100 80 60 III QUADRANT 40 20 I QUADRANT 0 1 2 10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) COMMUTATION CHARACTERISTICS (Tj = 125°C) COMMUTATION CHARACTERISTICS (Tj = 150°C) 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz TIME (di/dt)c TIME TIME VD 101 7 5 MINIMUM CHARAC3 TERISTICS 2 VALUE I QUADRANT III QUADRANT 100 7 0 10 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) 100 (%) The product guaranteed maximum junction temperature 150°C (See warning.) 7 5 3 2 SUPPLY VOLTAGE TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c 101 7 5 (di/dt)c TIME TIME VD III QUADRANT TYPICAL EXAMPLE Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I QUADRANT 3 2 100 7 0 10 MINIMUM CHARACTERISTICS VALUE 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CM MEDIUM POWER USE The product guaranteed maximum junction temperature 150°C (See warning.) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6Ω LOAD A 6V RG V TEST PROCEDURE 1 C1 A 6V V RG TEST PROCEDURE 2 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω 6Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002