MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE CM600DU-24NF ¡IC ................................................................... 600A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 10 13.8 11.5 14.5 20.4 10 (26) 40 E2 C1 4-M4 NUTS G1 Tc measured point (Base plate) (15) 35 +1.0 –0.5 C2E1 E2 C1 G1 E1 8 E2 G2 4-φ6.5MOUNTING HOLES 24.5 +1.0 –0.5 65 3-M8 NUTS 14.5 E1 20 C2E PPS Tc measured point (Base plate) LABEL 9 (26) E2 (26) G2 (15) 130 43.8 110±0.25 110±0.25 36 CIRCUIT DIAGRAM Mar.2003 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC’ = 111°C*3 Pulse Ratings 1200 ±20 600 1200 600 1200 2080 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 (Note 2) Pulse TC = 25°C (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value Unit V V A A A A W °C °C V N•m N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 6 7 8 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage — — — — — — — — — — — — — — — — — — — 1.95 2.15 — — — 4000 — — — — — 0.5 2.65 — 140 12 2.7 — 800 180 900 350 300 — 3.35 0.06 0.11 — µA VCE(sat) VGE = VGES, VCE = 0V Tj = 25°C IC = 600A, VGE = 15V Tj = 125°C Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance VCE = 10V VGE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE1 = VGE2 = 15V RG = 1.0Ω, Inductive load switching operation IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips 1.0 28 — — — 0.019 — — 0.023*3 10 mA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar.2003 MITSUBISHI IGBT MODULES CM600DU-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 12 800 11 600 400 10 200 9 2 0 4 6 8 10 4 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 400 200 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 104 Tj = 25°C 8 6 4 IC = 600A IC = 1200A 2 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 15 13 1000 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V IC = 240A 0 6 8 10 12 14 16 18 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 20 102 Cies 7 5 3 2 100 2 3 4 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 7 5 3 2 7 5 3 2 1 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 104 101 0 EMITTER-COLLECTOR VOLTAGE VEC (V) 103 7 5 3 2 Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE VGE (V) Coes Cres 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Conditions: VCC = 600V, VGE = ±15V, RG = 1Ω Tj = 125°C, Inductive load td(off) td(on) 103 7 5 3 2 tf 102 tr 7 5 3 2 101 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar.2003 MITSUBISHI IGBT MODULES CM600DU-24NF TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 Irr 3 2 trr 102 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 1Ω Tj = 25°C Inductive load 2 3 5 7 103 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.06°C/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.11°C/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 600A VCC = 400V 16 VCC = 600V 12 8 4 0 0 1000 2000 3000 4000 5000 6000 GATE CHARGE QG (nC) Mar.2003