MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA HIGH POWER INVERTER USE PRESS PACK TYPE OUTLINE DRAWING FG2000FX-50DA Dimensions in mm GATE (WHITE) 400 ± 8 AUXILIARY CATHODE CONNECTOR (RED) 0.4 MIN ● ITQRM Repetitive controllable on-state current ...........2200A ● IT(AV) Average on-state current .....................1050A ● VDRM Repetitive peak off state voltage ...................2500V ● Anode short type 0.4 MIN 26 ± 0.5 φ 63 ± 0.5 φ 3.5 DEPTH 2.2 ± 0.2 CATHODE TYPE NAME φ 63±0.5 ANODE φ 3.5 DEPTH 2.2 ± 0.2 φ 93 MAX APPLICATION Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters. MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) VDRM VDSM VD(DC) Voltage class 50DA 17 17 17 2500 2500 2000 Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage+ Non-repetitive peak off-state voltage+ DC off-state voltage+ Unit V V V V V V + : VGK = –2V Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg — — Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge (non-repetitive) on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak gate reverse current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Junction temperature Storage temperature Mounting force required Weight Conditions VDM = 1875V, Tj = 125°C, CS = 4.0µF, LS = 0.3µH f = 60Hz, sine wave θ = 180°, Tf = 73°C One half cycle at 60Hz One cycle at 60Hz VD = 1250V, IGM = 30A, Tj = 125°C Recommended value 20 Standard value Ratings 2200 1650 1050 16 10.5 × 105 1000 10 17 100 650 280 18 50 150 –40 ~ +125 –40 ~ +150 18 ~ 24 760 Unit A A A kA A2s A/µs V V A A W kW W W °C °C kN g Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA HIGH POWER INVERTER USE PRESS PACK TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Test conditions VTM IRRM IDRM IRG dv/dt tgt On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Tj = 125°C, ITM = 2000A, Instantaneous measurment Tj = 125°C, VRRM Applied Tj = 125°C, VDRM Applied, VGK = –2V Tj = 125°C, VRG = 17V Tj = 125°C, VD = 1250V, VGK = –2V Tj = 125°C, ITM = 2200A, IGM = 30A, VD = 1250V tgq Turn-off time IGQM VGT IGT Rth(j-f) Peak gate turn-off current Gate trigger voltage Gate trigger current Thermal resistance Tj = 125°C, ITM = 2200A, VDM = 1875V, diGQ/dt = –30A/µs VRG = 17V, CS = 4.0µF, LS = 0.3µH DC METHOD : VD = 24V, RL = 0.1Ω, Tj = 25°C Junction to fin Min — — — — 1000 — Limits Typ — — — — — — — — — — — — 610 — — — Max 2.4 50 50 50 — 10 30 — 1.5 2500 0.017 Unit V mA mA mA V/µs µs µs A V mA °C/W MAXIMUM ON-STATE CHARACTERISTIC 104 7 Tj = 125°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 RATED SURGE ON-STATE CURRENT 20 SURGE ON-STATE CURRENT (kA) ON-STATE CURRENT (A) PERFORMANCE CURVES 16 12 8 4 0 100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 ON-STATE VOLTAGE (V) 100 7 5 3 2 PFGM = 280W PFG(AV) = 50W VGT = 1.5V Tj = 25°C IGT = 2500mA IFGM = 100A 10–1 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 GATE CURRENT (mA) 2 3 5 7 102 MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN) 100 2 3 5 7101 0.020 THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) 101 7 5 3 2 VFGM = 10V 5 7 101 CONDUCTION TIME (CYCLES AT 60Hz) GATE CHARACTERISTICS 102 7 5 3 2 2 3 0.016 0.012 0.008 0.004 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (S) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (SINGLE-PHASE HALF WAVE) 4000 160 3500 150 θ 3000 360° RESISTIVE, 2500 INDUCTIVE LOAD 2000 60° 90° 120° 180° θ = 30° 1500 1000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) HIGH POWER INVERTER USE PRESS PACK TYPE 500 0 120 110 100 90 80 70 0 300 600 900 60 1200 θ = 30° 0 200 400 60° 90° 120° 180° 600 800 1000 1200 AVERAGE ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION CHARACTERISTICS (RECTANGULAR WAVE) 4000 ALLOWABLE FIN TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 130 DC 270° 3500 180° 3000 120° 90° 2500 60° θ = 30° 2000 1500 θ 1000 360° RESISTIVE, INDUCTIVE LOAD 500 0 120 FIN TEMPERATURE (°C) ON-STATE POWER DISSIPATION (W) 360° RESISTIVE, INDUCTIVE LOAD 130 AVERAGE ON-STATE CURRENT (A) 0 500 1000 1500 100 90 80 70 50 2000 6000 5000 4000 3000 2000 1000 0 –60 –20 20 60 100 JUNCTION TEMPERATURE (°C) θ = 30° 60° 90° 180° 120° 270° DC 140 0 500 1000 1500 2000 AVERAGE ON-STATE CURRENT (A) TURN ON TIME tgt, TURN ON DELAY TIME td (µs) VD = 5 ~ 20V IT = 25 ~ 200A HALF SINE WAVE 7000 360° RESISTIVE, INDUCTIVE LOAD 60 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE (TYPICAL) 8000 θ 110 AVERAGE ON-STATE CURRENT (A) GATE TRIGGER CURRENT (mA) θ 140 TURN ON TIME, TURN ON DELAY TIME VS. TURN ON GATE CURRENT (TYPICAL) 10.0 IT = 2200A VD = 1250V diT/dt = 500A/µs diG/dt = 10A/µs Tj = 125°C 9.0 8.0 7.0 6.0 5.0 tgt 4.0 3.0 td 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90 100 TURN ON GATE CURRENT (A) Aug.1998 MITSUBISHI GATE TURN-OFF THYRISTORS FG2000FX-50DA TURN OFF TIME, TURN OFF STORAGE TIME VS. TURN OFF CURRENT (TYPICAL) 30 tgq 25 ts 20 15 VD = 1250V VDM = 1875V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 10 5 0 500 1000 1500 2000 2500 TURN OFF CURRENT (A) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) TURN OFF TIME tgq, TURN OFF STORAGE TIME ts (µs) HIGH POWER INVERTER USE PRESS PACK TYPE TURN OFF TIME, TURN OFF STORAGE TIME VS. RATE OF RISE OF TURN OFF GATE CURRENT (TYPICAL) 50 40 30 tgq 20 VD = 1250V 0 10 600 500 400 VD = 1250V VDM = 1875V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 300 0 500 1000 1500 2000 TURN OFF GATE CURRENT (A) TURN OFF GATE CURRENT (A) 40 50 60 800 600 500 VD = 1250V VDM = 1875V IT = 2200A VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 400 20 30 40 50 60 TURN OFF CURRENT (A) RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN ON SWITCHING ENERGY (MAXIMUM) TURN OFF SWITCHING ENERGY (MAXIMUM) 3.0 diT/dt = 500A/µs 1.0 300A/µs 0.8 200A/µs 0.6 100A/µs 0.4 0.2 500 1000 1500 2000 TURN ON CURRENT (A) 2500 SWITCHING ENERGY Eoff (J/P) VD = 1250V 1.4 IGM = 30A diG/dt = 10A/µs CS = 4.0µF 1.2 RS = 5Ω Tj = 125°C 0 700 300 10 2500 1.6 SWITCHING ENERGY Eon (J/P) 30 TURN OFF GATE CURRENT VS. RATE OF RISE OF GATE CURRENT (TYPICAL) 700 0 20 RATE OF RISE OF TURN OFF GATE CURRENT (A/µS) TURN OFF GATE CURRENT VS. TURN OFF CURRENT (TYPICAL) 200 ts VDM = 1875V IT = 2200A 10 VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 2.5 2.0 1.5 VD = 1250V VDM = 1875V diGQ/dt = –30A/µs VRG = 17V CS = 4.0µF LS = 0.3µH Tj = 125°C 1.0 0.5 0 0 500 1000 1500 2000 2500 TURN OFF CURRENT (A) Aug.1998