2SJ234 L , 2SJ234 S Silicon P Channel MOS FET Application DPAK-1 DPAK High speed power switching Features 4 4 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source • Suitable for DC – DC convertor, motor drive, power switch, solenoid drive 12 3 12 S Type 3 L Type D 1. Gate 2. Drain 3. Source 4. Drain G S Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –30 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –2.5 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –10 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –2.5 A ——————————————————————————————————————————— Channel dissipation Pch** 10 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * ** PW ≤ 10 µs, duty cycle ≤ 1 % Value at Tc = 25 °C 2SJ234 L , 2SJ234 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –30 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –100 µA VDS = –25 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA VDS = –10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.3 0.4 Ω —————————— — 0.5 ID = –1.5 A VGS = –10 V * —————————— 0.7 ID = –1.5 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 1.0 1.8 — S ID = –1.5 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 245 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 170 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 60 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 7 — ns ID = –1.5 A ———————————————————————————————— Rise time tr — 25 — ns ———————————————————————————————— Turn–off delay time td(off) — 85 — ns VGS = –10 V RL = 20 Ω ———————————————————————————————— Fall time tf — 72 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — –1.1 — V IF = –2.5 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 80 — ns IF = –2.5 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2SJ234 L , 2SJ234 S Power vs. Temperature Derating Maximum Safe Operation Area – 50 20 – 30 Drain Current I D (A) 15 10 –3 –1 ea ar n) is (o PW th S in D n R it o by ra ed pe it O lim is 0 = 1 10 µs m s m s – 0.3 5 µs 10 n tio ) ra 5°C pe 2 O = C c D (T Channel Dissipation Pch (W) 10 – 10 (1 sh ot ) Ta = 25°C – 0.1 0 50 100 Case Temperature 150 Tc (°C) 200 – 0.05 – 0.1 Typical Output Characteristics – 100 Pulse Test –4V –3 –8 Drain Current I D (A) Drain Current I D (A) – 30 Typical Transfer Characteristics –6V – 3.5 V –2 –3V –1 V GS = – 2.5 V –2 – 10 – 10 –8V –4 0 –3 –1 Drain to Source Voltage V DS (V) –5 – 10 V – 0.3 –4 –6 V DS = –10 V Pulse Test – 25°C –6 Tc = 25°C 75°C –4 –2 –8 Drain to Source Voltage V DS (V) – 10 0 –2 –4 –6 –8 Gate to Source Voltage V GS (V) – 10 2SJ234 L , 2SJ234 S Drain to Source Saturation Voltage vs. Gage to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 – 2.0 – 1.6 – 1.2 –3A – 0.8 –2A I D = –1 A – 0.4 0 –2 –4 –8 –6 Pulse Test 2 Static Drain–Source on State Resistance R DS (on) ( Ω ) Drain to Source Saturation Voltage V DS (on) (V) Pulse Test 1 V GS = – 4 V 0.5 –10 V 0.2 0.1 – 10 0.05 – 0.2 – 0.5 –2 –5 –10 – 20 Drain Current I D (A) Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current 5 2.0 Forward Transfer Admittance |y fs| (S) Pulse Test Static Drain–Source on State Resistance R DS (on) ( Ω ) –1 1.6 ID =–3A 1.2 V GS = – 4 V –2A –1 A 0.8 –3A 0.4 –1,– 2 A 2 – 25°C 1 Tc = 25°C 75°C 0.5 V DS = –10 V Pulse Test 0.2 0.1 V GS = –10 V 0 – 40 0 40 80 120 Case Temperature Tc (°C) 160 0.05 – 0.2 – 0.5 –1 –2 –5 Drain Current I D (A) –10 – 20 2SJ234 L , 2SJ234 S Typical Capacitance vs. Drain to Source Voltage Body – Drain Diode Reverse Recovery Time 300 10000 di / dt = 50 A / µ s, Ta = 25°C VGS = 0 V GS = 0 f = 1 MHz Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 100 30 10 1000 Ciss Coss 100 Crss 3 1 – 0.01 – 0.03 – 0.3 – 0.1 –3 –1 10 –10 0 Reverse Drain Current I DR (A) – 20 . V GS = –10 V,VDD =. – 30 V PW = 2 µs, duty 1 % ID = – 3 A V DD = – 25 V V DS – 30 –12 –10 V V GS –16 – 40 – 50 0 4 8 12 Gate Charge Q g (nc) 16 – 20 20 Switching Time t (ns) Drain to Source Voltage VDS (V) –8 300 Gate to Source Voltage VGS (V) –4 – 20 – 50 1000 V DD = –10 V – 25 V – 40 Switching Characteristics 0 –10 – 30 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 0 –10 td (off) 100 tf 30 tr td (on) 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 Drain Current I D (A) –3 –10 2SJ234 L , 2SJ234 S Reverse Drain Current vs. Source to Drain Voltage –10 –6 V GS = –15 V –4 –10 V –5V –2 0, 5 V 0 0 – 0.8 – 0.4 –1.6 –1.2 – 2.0 Source to Drain Voltage V SD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) Reverse Drain Current I DR (A) Pulse Test –8 3 1.0 Tc = 25°C D=1 0.5 0.3 0.2 0.1 0.05 0.1 0.02 0.03 hot 0.01 1s θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 12.5°C / W. Tc = 25°C PW D= T P DM lse Pu T 0.01 10 µ 100 µ 1m 10 m Pulse Width PW (S) 100 m PW 1 10