UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( Typ. 11nC) • Low Crss ( Typ. 5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability • RoHS compliant D G G D S TO-220 FDP Series TO-220F FDPF Series GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FDP5N50 FDPF5N50 500 Units V ±30 V -Continuous (TC = 25oC) 5 5* -Continuous (TC = 100oC) 3 3* - Pulsed (Note 1) IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 5 A EAR Repetitive Avalanche Energy (Note 1) 8.5 mJ dv/dt Peak Diode Recovery dv/dt 20* (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A 225 (Note 3) (TC = 25oC) PD TL 20 A mJ 4.5 V/ns 85 28 W 0.67 0.22 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics FDP5N50 FDPF5N50 RθJC Symbol Thermal Resistance, Junction to Case Parameter 1.4 4.5 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2007 Fairchild Semiconductor Corporation FDP5N50 / FDPF5N50 Rev. A 1 Units o C/W www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET December 2007 Device Marking FDP5N50 Device FDP5N50 Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF5N50 FDPF5N50 TO-220F - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V ID = 250μA, Referenced to 25oC - 0.6 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 1 VDS = 400V, TC = 125oC - - 10 μA IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 3.0 - 5.0 V - 1.15 1.4 Ω - 4.3 - S - 480 640 pF - 66 88 pF nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 2.5A gFS Forward Transconductance VDS = 20V, ID = 2.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V, ID = 5A VGS = 10V (Note 4, 5) - 5 8 pF - 11 15 nC - 3 - nC - 5 - nC - 13 36 ns - 22 54 ns - 28 66 ns - 20 50 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID = 5A RG = 25Ω (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5A - - 1.4 V trr Reverse Recovery Time - 300 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/μs - 1.8 - μC (Note 4) Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 18mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3: ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5: Essentially Independent of Operating Temperature Typical Characteristics FDP5N50 / FDPF5N50 Rev. A 2 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted Figure 1. On-Region Characteristics 20 20 VGS = 15.0V 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID,Drain Current[A] 10 ID,Drain Current[A] Figure 2. Transfer Characteristics 1 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test 0.1 *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.04 0.1 1 10 VDS,Drain-Source Voltage[V] 0.1 30 4 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] 70 2.5 VGS = 10V 2.0 VGS = 20V 1.5 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o *Note: TJ = 25 C 1.0 0 3 6 ID, Drain Current [A] 9 1 0.4 12 Figure 5. Capacitance Characteristics 1000 1.6 10 VGS, Gate-Source Voltage [V] Ciss 2. 250μs Pulse Test 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 750 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 3.0 RDS(ON) [Ω], Drain-Source On-Resistance 5 6 7 VGS,Gate-Source Voltage[V] *Note: 1. VGS = 0V 2. f = 1MHz 500 Coss 250 VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 Crss 0 0.1 1 10 VDS, Drain-Source Voltage [V] FDP5N50 / FDPF5N50 Rev. A *Note: ID = 5A 0 30 0 3 4 8 Qg, Total Gate Charge [nC] 12 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -75 -25 25 75 125 o TJ, Junction Temperature [ C] 1ms DC Operation in This Area is Limited by R DS(on) *Notes: 100μs 1ms 10ms 1 DC Operation in This Area is Limited by R DS(on) 0.1 *Notes: o o 1. TC = 25 C 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 175 30μs 10ms 0.01 -25 25 75 125 o TJ, Junction Temperature [ C] 10 ID, Drain Current [A] ID, Drain Current [A] *Notes: 1. VGS = 10V 2. ID = 2.5A 30 100μs 0.1 1.0 Figure 10. Maximum Safe Operating Area - FDPF5N50 30μs 1 1.5 -75 Figure 9. Maximum Safe Operating Area - FDP5N50 10 2.0 0.5 175 30 2.5 2. TJ = 150 C 3. Single Pulse 0.01 800 1 10 100 VDS, Drain-Source Voltage [V] 800 Figure 11. Maximum Drain Current vs. Case Temperature 6 ID, Drain Current [A] 5 4 3 2 1 0 25 50 75 100 125 o TC, Case Temperature [ C] FDP5N50 / FDPF5N50 Rev. A 150 4 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Typical Performance Characteristics (Continued) FDP5N50 / FDPF5N50 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDP5N50 Thermal Response [ZθJC] 3 1 0.5 0.2 PDM PDM t1 t1 t2 t2 0.1 0.1 0.05 *Notes: o 0.02 0.01 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 -4 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 2 10 10 Figure 13. Transient Thermal Response Curve - FDPF5N50 Thermal Response [ZθJC] 10 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 t2 0.02 *Notes: 0.01 o 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDP5N50 / FDPF5N50 Rev. A -4 10 -3 10 -2 -1 0 1 10 10 10 10 Rectangular Pulse Duration [sec] 5 2 10 3 10 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP5N50 / FDPF5N50 Rev. A 6 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) G S G S am e T ype as DUT V DD • d v / d t c o n t r o lle d b y R G • I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id th D = -------------------------G a te P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/ d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FDP5N50 / FDPF5N50 Rev. A 7 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Mechanical Dimensions TO-220 FDP5N50 / FDPF5N50 Rev. A 8 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET Mechanical Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP5N50 / FDPF5N50 Rev. A 9 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I32 FDP5N50 / FDPF5N50 Rev. A 10 www.fairchildsemi.com FDP5N50 / FDPF5N50 N-Channel MOSFET TRADEMARKS