FGPF4633 330V PDP IGBT tm Features General Description • High current capability Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. • Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A • High input impedance • Fast switching • RoHS compliant Applications • PDP System GC E TO-220F (Potted) Absolute Maximum Ratings Symbol Description Ratings Units 330 V VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC pulse(1)* Collector Current @ TC = 25oC Maximum Power Dissipation @ TC = 25oC 30.5 W Maximum Power Dissipation @ TC = 100oC 12.2 W PD ± 30 V 300 A TJ Operating Junction Temperature -55 to +150 o C Tstg Storage Temperature Range -55 to +150 o C TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 o C Thermal Characteristics Symbol RθJC(IGBT) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. Max. - 4.1 o C/W 62.5 o C/W - Units Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5µsec * Ic_pluse limited by max Tj ©2010 Fairchild Semiconductor Corporation FGPF4633 Rev. A 1 www.fairchildsemi.com FGPF4633 330V PDP Trench IGBT February 2010 Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGPF4633 FGPF4633TU TO-220F Tube 50ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 330 - - V - 0.3 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA ∆BVCES ∆TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 100 µA IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250µA, VCE = VGE VGE = 0V, IC = 250µA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 2.4 3.3 4.0 V IC = 20A, VGE = 15V - 1.1 - V IC = 40A, VGE = 15V - 1.35 - 1.55 1.8 V - 1.61 - V - 1715 - pF IC = 70A, VGE = 15V, TC = 25oC - IC = 70A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz - 75 - pF - 55 - pF - 8 - ns - 30 - ns - 52 - ns - 260 - ns - 8 - ns - 32 - ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge FGPF4633 Rev. A VCC = 200V, IC = 20A RG = 5Ω, VGE = 15V Resistive Load, TC = 25oC VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCE = 200V, IC = 20A VGE = 15V 2 - 53 - ns - 341 - ns - 60 - nC - 8 - nC - 20 - nC www.fairchildsemi.com FGPF4633 330V PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 300 300 o o 15V TC = 25 C 20V 200 10V 150 100 VGE = 8V 12V 200 100 VGE = 8V 50 0 0 0 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 0 7 Figure 3. Typical Saturation Voltage Characteristics 1 2 3 4 5 6 Collector-Emitter Voltage, VCE [V] 7 Figure 4. Transfer Characteristics 300 300 Common Emitter VGE = 15V 250 TC = 25 C o TC = 125 C 200 Common Emitter VCE = 20V 250 o Collector Current, IC [A] Collector Current, IC [A] 10V 150 50 150 100 o TC = 25 C o TC = 125 C 200 150 100 50 50 0 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 2 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level Collector-Emitter Voltage, VCE [V] 70A 1.4 0.8 -55 14 Common Emitter 1.6 1.0 6 8 10 12 Gate-Emitter Voltage,VGE [V] 20 Common Emitter VGE = 15V 1.2 4 Figure 6. Saturation Voltage vs. VGE 1.8 Collector-Emitter Voltage, VCE [V] 15V 250 Collector Current, IC [A] Collector Current, IC [A] 250 FGPF4633 Rev. A 20V TC = 125 C 12V 40A IC = 20A o TC = 25 C 16 12 70A 8 4 0 -30 0 30 60 90 120 150 o Collector-EmitterCase Temperature, TC [ C] 3 40A IC = 20A 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGPF4633 330V PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE Figure 8. Capacitance Characteristics 3000 20 Common Emitter VGE = 0V, f = 1MHz Common Emitter o Collector-Emitter Voltage, VCE [V] TC = 125 C o 16 Capacitance [pF] TC = 25 C 12 70A 8 40A 2000 Cies 1000 Coes 4 IC = 20A Cres 0 0.1 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 Figure 9. Gate charge Characteristics 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 10. SOA Characteristics 15 500 Common Emitter VCC = 100V 9 200V 6 3 0 0 10µs 100 Collector Current, Ic [A] Gate-Emitter Voltage, VGE [V] o TC = 25 C 12 15 30 45 Gate Charge, Qg [nC] 100µs 1ms 10 10 ms DC 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 0.1 0.01 0.1 60 Figure 11. Turn-on Characteristics vs. Gate Resistance 1 10 100 Collector-Emitter Voltage, VCE [V] 500 Figure 12. Turn-off Characteristics vs. Gate Resistance 70 Switching Time [ns] Switching Time [ns] 500 tr td(on) 10 Common Emitter VCC = 200V, VGE = 15V IC = 20A td(off) tf 100 Common Emitter VCC = 200V, VGE = 15V IC = 20A o TC = 25 C o TC = 25 C o TC = 125 C o 6 0 10 20 30 40 50 0 Gate Resistance, RG [Ω ] FGPF4633 Rev. A TC = 125 C 40 10 20 30 40 50 Gate Resistance, RG [Ω ] 4 www.fairchildsemi.com FGPF4633 330V PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current 500 100 10 Switching Time [ns] Switching Time [ns] td(off) tr Common Emitter VGE = 15V, RG = 5Ω td(on) 100 tf Common Emitter VGE = 15V, RG = 5Ω o o TC = 25 C TC = 25 C o o TC = 125 C TC = 125 C 3 20 30 40 50 60 10 20 70 30 Figure 15. Switching Loss vs. Gate Resistance 50 60 70 Figure 16. Switching Loss vs. Collector Current 3 2 Common Emitter VCC = 200V, VGE = 15V 1 IC = 20A 1 o TC = 25 C Switching Loss [mJ] Switching Loss [mJ] 40 Collector Current, IC [A] Collector Current, IC [A] o TC = 125 C Eoff 0.1 Eoff 0.1 Eon Common Emitter VGE = 15V, RG = 5Ω o TC = 25 C o Eon 0.03 0 10 20 30 TC = 125 C 40 0.01 20 50 Gate Resistance, RG [Ω ] 30 40 50 60 70 Collector Current, IC [A] Figure 17. Turn off Switching SOA Characteristics 500 Collector Current, IC [A] 100 10 1 Safe Operating Area o VGE = 15V, TC = 125 C 0.1 1 10 100 500 Collector-Emitter Voltage, VCE [V] FGPF4633 Rev. A 5 www.fairchildsemi.com FGPF4633 330V PDP Trench IGBT Typical Performance Characteristics FGPF4633 330V PDP Trench IGBT Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 5 0.5 1 0.2 0.1 0.05 PDM 0.1 0.02 t1 t2 0.01 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC single pulse 0.01 0.006 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Rectangular Pulse Duration [sec] FGPF4633 Rev. A 6 www.fairchildsemi.com 3.30 ±0.10 TO-220F Potted 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 * Front/Back Side Isolation Voltage : AC 2700V Dimensions in Millimeters FGPF4633 Rev. A 7 www.fairchildsemi.com FGPF4633 330V PDP Trench IGBT Package Dimensions TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ® FRFET SM Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ Motion-SPM™ OptoHiT™ OPTOLOGIC® OPTOPLANAR® AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FETBench™ FlashWriter®* FPS™ F-PFS™ ® PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ® * The Power Franchise® TinyBoost™ TinyBuck™ TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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