MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE A B U Q R Z U Z AB 12 3 4 U 5678 9 11 W 13 15 17 19 10 12 AB (15 TYP.) B M F E C X - DIA. (4 TYP.) P AE N S M 1. VUPC 2. UFO 3. U P 4. VUPI 5. VVPC 6. VFO 7. VP 8. VVPI 9. VWPC 10. WFO 14 16 18 Y - THD (6 TYP.) U W W W U V AE 11. WP 12. VWPI 13. VNC 14. VNI 15. BR 16. U N 17. VN 18. WN 19. F O W K J J P D Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. 2.54 MM DIA. (2 TYP.) 0.5 MM SQ. PIN (19 TYP.) AC T VUPI Features: u Complete Output Power Circuit OUT V CC VVPI VUPC UP UFO FO IN SI GND GND OUT V CC VWPI VVPC VP VFO IN FO SI GND GND OUT V CC IN FO GND GND UN IN FO OUT V CC SI VN IN FO OUT V CC SI GND GND OUT V CC VNI VNC WN IN FO SI GND GND OUT V CC FO BR IN FO SI TEMP AA VWPC WP WFO AD V GND GND L SI N GND GND G H u Gate Drive Circuit B N W V U u Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage P Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.29±0.04 109.0±1.0 B 3.74±0.02 95.0±0.5 C 3.46±0.04 88.0±1.0 D 3.19 81.0 E 2.91±0.02 74.0±0.5 W 0.30 7.0 F 2.36 60.0 X 0.22 Dia. Dia. 5.5 G 1.28 32.6 Y Metric M5 M5 H 1.24 31.6 Z 0.0127 3.22 J 1.02 26.0 AA 0.10 2.6 K 0.94 24.0 AB 0.08 2.0 L 0.87 +0.06/-0 22.0 +1.5/-0.0 Dimensions Inches Millimeters S 0.67 17.0 T 0.52 13.2 U 0.39 10.0 V 0.31 8.0 AC 0.07 1.8 M 0.79 20.0 AD 0.06 1.6 N 0.76 19.4 AE 0.02±0.01 0.5±0.3 P 0.75 19.0 Q 0.67 17.02 R 0.708 17.98 Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM50RSA060 is a 600V, 50 Ampere Intelligent Power Module. Type PM Current Rating Amperes VCES Volts (x 10) 50 60 Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol PM50RSA060 Units Tj -40 to 125 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N·m Mounting Torque, M5 Main Terminal Screw — 1.47 ~ 1.96 N·m Module Weight (Typical) — Power Device Junction Temperature 550 Grams Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) 400 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms Control Sector Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC) VCIN 20 Volts Fault Output Supply Voltage (Applied between UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) VFO 20 Volts Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal) IFO 20 mA VCES 600 Volts IC 50 Amperes Peak Collector Current, ± ICP 100 Amperes Supply Voltage (Applied between P - N) VCC 450 Volts VCC(surge) 500 Volts PC 138 Watts VCES 600 Volts Collector Current, (TC = 25°C) IC 15 Amperes Peak Collector Current, (TC = 25°C) ICP 30 Amperes IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, ± Supply Voltage, Surge (Applied between P - N) Collector Dissipation Brake Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Supply Voltage (Applied between P - N) VCC 450 Volts VCC(surge) 500 Volts Collector Dissipation PC 52 Watts Diode Forward Current IF 15 Amperes VR(DC) 600 Volts Supply Voltage, Surge (Applied between P - N) Diode DC Reverse Voltage Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units OC -20°C ≤ T ≤ 125°C, VD = 15V 65 88 — Amperes 18 26 — Amperes — 132 — Amperes — 39 — Amperes Control Sector Over Current Trip Level Inverter Part Over Current Trip Level Brake Part Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V Short Circuit Trip Level Brake Part Over Current Delay Time Over Temperature Protection Supply Circuit Under Voltage Protection toff(OC) VD = 15V — 10 — µs OT Trip Level 111 118 125 °C OTr Reset Level — 100 — °C UV Trip Level 11.5 12.0 12.5 Volts UVr Reset Level — 12.5 — Volts Supply Voltage VD Applied between VUP1-VUPC, 13.5 15 16.5 Volts Circuit Current ID — 44 60 mA VVP1-VVPC, VWP1-VWPC, VN1-VNC VD = 15V, VCIN = 15V, VN1-VNC VD = 15V, VCIN = 15V, VXP1-VXPC — 13 18 mA Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts UN · VN · WN · Br-VNC PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA IFO(L) VD = 15V, VFO = 15V — 10 15 mA tFO VD = 15V 1.0 1.8 — ms Minimum Fault Output Pulse Width Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current Diode Forward Voltage Collector-Emitter Saturation Voltage ICES VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA VEC -IC = 50A, VD = 15V, VCIN = 15V — 2.2 3.3 Volts VCE(sat) VD = 15V, VCIN = 0V, IC = 50A,Tj = 25°C — 1.8 2.7 Volts VD = 15V, VCIN = 0V, IC = 50A, — 1.85 2.78 Volts 0.4 0.8 2.0 µs — 0.15 0.3 µs Tj = 125°C Inductive Load Switching Times ton trr VD = 15V, VCIN = 0 ↔ 15V tC(on) VCC = 300V, IC = 50A — 0.4 1.0 µs toff Tj = 125°C — 2.0 2.9 µs — 0.5 1.0 µs — 2.6 3.5 Volts — 3.0 4.0 Volts IF = 15A, VD = 15V, VCIN = 15V — 1.7 2.2 Volts VCE = VCES, Tj = 25°C — — 1 mA VCE = VCES, Tj = 125°C — — 10 mA tC(off) Brake Sector Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 15A, Tj = 25°C VD = 15V, VCIN = 0V, IC = 15A, Tj = 125°C Diode Forward Voltage VFM Collector Cutoff Current ICES Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.90 °C/Watt Rth(j-c)F Each Inverter FWDi — — 2.5 °C/Watt Rth(c-f)Q Each Brake IGBT — — 2.4 °C/Watt °C/Watt Contact Thermal Resistance Rth(c-f)F Each Brake FWDi — — 4.5 Rth(c-f) Case to Fin Per Module, — — 0.027 °C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage VCC Applied across P-N Terminals 0 ~ 400 Volts Applied between VUP1-VUPC, 15 ± 1.5 Volts VD VN1-VNC, VVP1-VVPC, VWP1-VWPC Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 ~ VD Volts PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz Minimum Dead Time tdead Input Signal ≥2 µs UN · VN · WN · Br-VNC Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.0 1.5 1.0 0.5 2.5 2.0 1.5 1.0 0.5 0 0 0 10 20 30 40 VD = 17V 15 40 13 30 20 10 0 0 50 Tj = 25oC VCIN = 0V 50 12 14 16 18 20 0 0.5 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 100 100 102 SWITCHING TIMES, tc(on), tc(off), (µs) toff 100 ton 10-1 100 101 tc(off) tc(on) 10-1 VCC = 300V VD = 15V Inductive Load Tj = 25oC Tj = 125oC 10-2 100 102 101 Inductive Load Tj = 25oC Tj = 125oC 10-1 101 trr 10-2 100 102 Irr 100 102 101 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) 140 140 101 100 Tj = 25oC OVER CURRENT TRIP LEVEL % (NORMALIZED) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC OVER CURRENT TRIP LEVEL % (NORMALIZED) SWITCHING TIMES, ton, toff, (µs) Tj = 25oC Tj = 125oC REVERSE RECOVERY TIME, trr, (µs) VCC = 300V VD = 15V Inductive Load COLLECTOR REVERSE CURRENT, -IC, (AMPERES) 2.0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) VCC = 300V VD = 15V 120 100 80 60 0 0 1.5 SUPPLY VOLTAGE, VD, (VOLTS) 101 102 1.0 COLLECTOR CURRENT, IC, (AMPERES) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 2.5 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 2.5 60 IC = 50A VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR CURRENT, IC, (AMPERES) VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) VD = 15V 120 100 80 60 0 0 12 14 16 18 SUPPLY VOLTAGE, VD, (VOLTS) 20 -50 0 50 100 150 JUNCTION TEMPERATURE, Tj, (oC) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE Inverter Part TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 15 TRIP RESET VD = 15V 120 14 UV TRIP-RESET LEVEL, UVt, UVr, (VOLTS) FAULT OUTPUT PULSE WIDTH % (NORMALIZED) 140 100 80 60 13 12 11 0 0 -50 0 50 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 150 -50 0 50 100 JUNCTION TEMPERATURE, TC (oC) JUNCTION TEMPERATURE, Tj, (oC) 150 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.90oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 2.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM50RSA060 FLAT-BASE TYPE INSULATED PACKAGE Brake Part COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 0.5 16 2.5 2.0 1.5 1.0 Tj = 25oC VCIN = 0V IC = 6A IC = 15A 0.5 0 0 4 8 12 16 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) VD = 15V VCIN = 15V Tj = 25oC Tj = 125oC 101 100 0.4 0.8 1.2 1.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 15 VD = 17V 2.0 13 8 4 12 14 16 18 20 0 1 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 2.4oC/W 10-2 10-1 TIME, (s) 100 3 4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-3 10-3 2 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) REVERSE COLLECTOR CURRENT VS. EMITTER-COLLECTOR VOLTAGE 0 12 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 102 Tj = 25oC VCIN = 0V 0 0 20 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 DIODE FORWARD CURRENT, IF, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 3.0 OUTPUT CHARACTERISTICS (TYPICAL) 101 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 4.5oC/W 10-3 10-3 10-2 10-1 100 101 TIME, (s) Sep.1998