MITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE TERMINAL CODE 1. WFO 11. UP 2. VWPC 12. VUP1 3. WP 13. NC 14. FO 4. VWP1 5. VFO 15. VNC 16. VN1 6. VVPC 17. UN 7. VP 18. VN 8. VVP1 19. WN 9. UFO 10. VUPC A D P N P P M R 1234 Q U 5678 9 10 1112 B K E U V 13 14 15 16 17 18 19 L - TYP. U V M W T (4 TYP.) N CCφ (4 PLACES) AA - TYP. J TYP. S NUTS (5 TYP.) X SEE DETAIL A W Z - TYP. H BB SQ PIN - TYP. (19 PLACES) C G Y DETAIL A F VUP1 UFO UP VUPC VVP1 VFO VP VVPC VWP1 WFO WP VWPC UN VN VN1 WN VNC FO NC Features: u Complete Output Power Circuit RfO GND FO IN VCC TEMP GND OUT Si TH GND FO IN VCC GND FO IN VCC GND FO IN VCC GND FO IN VCC GND FO IN VCC GND GND GND GND GND Si OUT Si OUT Si OUT Si OUT Si u Gate Drive Circuit OUT u Protection Logic – Short Circuit – Over Temperature – Under Voltage RfO = 1.5k OHM N W V U P Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.72 120.0 Q 0.59 15.1 B 4.02 102.0 R 0.72 18.25 C Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. S M5 Metric M5 D 0.95+0.04/-0.02 24.1 +1.0/-0.5 4.13±0.010 105.0±0.25 T 0.22 Dia. Dia. 5.5 E 3.43±0.010 87.0±0.25 U 0.56±0.010 14.1±0.25 F 0.16 4.0 V 1.72±0.012 43.57±0.3 G 0.95 24.1 W 0.57±0.012 14.6±0.3 H 0.42 10.6 X 3.35 22.0 Y 0.85 Z 0.10±0.010 2.54±0.25 3.49±0.25 J 0.87 K 3.51±0.02 L 0.47 12.0 AA 1.37±0.010 M 0.48 12.3 BB 0.02 SQ N 0.77 19.5 CC P 0.30 7.5 89.2±0.5 0.12+0.04/-0.02 85.2 21.6 Applications: u Inverters u UPS u Motion/Servo Control u Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM75CVA120 is a 1200V, 75 Ampere Intelligent Power Module. Type PM Current Rating Amperes VCES Volts (x 10) 75 120 0.64 SQ 3.0+1.0/-0.5 Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol PM75CVA120 Units Tj -20 to 150 °C Storage Temperature Tstg -40 to 125 °C Case Operating Temperature TC -20 to 100 °C Mounting Torque, M5 Mounting Screws — 2.5 ~ 3.5 N·m Mounting Torque, M5 Main Terminal Screws — 2.5 ~ 3.5 N·m Module Weight (Typical) — 730 Grams Supply Voltage (Applied between P - N) VCC(surge) 1000 Volts Supply Voltage Protected by SC (VD = 13.5 ~16.5V, Inverter Part, Tj = 125°C Start) VCC(prot.) 800 Volts Viso 2500 Vrms Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC) VCIN 20 Volts Fault Output Supply Voltage (Applied between UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) VFO 20 Volts IFO 20 mA VCES 1200 Volts Power Device Junction Temperature Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Control Sector Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 15V) Collector Current, (TC = 25°C) IC 75 Amperes Peak Collector Current, (TC = 25°C) ICP 150 Amperes Collector Dissipation (TC = 25°C) PC 500 Watts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units SC -20°C ≤ Tj ≤ 125°C, VD = 15V 105 — — Amperes Control Sector Short Circuit Trip Level toff(SC) VD = 15V — 10 — µs Over Temperature Protection OT Trip Level 100 110 120 °C (VD = 15V, Lower Arm) OTr Reset Level 85 95 105 °C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts (-20°C ≤ Tj ≤ 125°C) UVr Reset Level — 12.5 — Volts ID VD = 15V, VCIN = 15V, VN1-VNC — 40 55 mA VD = 15V, VCIN = 15V, VXP1-VXPC — 13 18 mA Input ON Threshold Voltage Vth(on) Applied between UP-VUPC, VP-VVPC, 1.2 1.5 1.8 Volts Input OFF Threshold Voltage Vth(off) WP-VWPC, UN · VN · WN-VNC 1.7 2.0 2.3 Volts Fault Output Current IFO(H) VD = 15V, VFO = 15V* — — 0.01 mA IFO(L) VD = 15V, VFO = 15V* — 10 15 mA tFO VD = 15V* 1.0 1.8 — ms Short Circuit Current Delay Time Circuit Current Minimum Fault Output Pulse Width * Fault output is given only when the internal SC, OT, and UV protections circuits of either an upper-arm or a lower-arm device operate to protect it. Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Emitter Cutoff Current ICES VCE = VCES, VD = 15V, Tj = 25°C — — 1.0 mA VCE = VCES, VD = 15V, Tj = 125°C — — 10.0 mA FWDi Forward Voltage VEC -IC = 75A, VD = 15V, VCIN = 15V — 2.50 3.50 Volts VCE(sat) VD = 15V, VCIN = 0V, IC = 75A, — 2.65 3.30 Volts — 2.60 3.25 Volts IGBT Inverter Sector Collector-Emitter Saturation Voltage Pulsed, Tj = 25°C VD = 15V, VCIN = 0V, IC = 75A, Pulsed, Tj = 125°C Inductive Load Switching Times 0.4 0.9 2.3 µs trr VD = 15V, VCIN = 0V ↔ 15V — 0.2 0.3 µs tC(on) VCC = 600V, IC = 75A, — 0.4 1.0 µs toff Tj = 125°C — 2.4 3.4 µs — 0.7 1.2 µs Min. Typ. Max. Units ton tC(off) Thermal Characteristics Characteristic Symbol Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 0.25 °C/Watt Rth(j-c)F Each Inverter FWDi — — 0.51 °C/Watt Rth(c-f) Case to Fin Per Module, — — 0.025 °C/Watt Value Units Contact Thermal Resistance Condition Thermal Grease Applied Recommended Conditions for Use Characteristic Supply Voltage Symbol Condition VCC Applied across P-N Terminals ≤ 800 Volts VCE(surge) Applied across P-N Terminals ≤ 1000 Volts Applied between VUP1-VUPC, 15 ± 1.5 Volts ≤ 0.8 Volts ≥ 4.0 Volts ≥ 3.0 µs VD VVP1-VVPC, VWP1-VWPC *, VN1-VNC Input ON Voltage VCIN(on) Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC Arm Shoot-Through Blocking Time tdead Applied between For IPM's each Input Signal * With ripple satisfying the following conditions, dv/dt swing ≤ 5V/µs, Variation ≤ 2V peak to peak. Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE COLLECTOR-EMITTER SATURATON VOLTAGE CHARACTERISTICS (TYPICAL) 3.0 2.0 1.0 1.0 VD = 15V VCIN = 0V Tj = 25°C Tj = 125°C 0 IC = 75A VCIN = 0V Tj = 25°C Tj = 125°C 0 50 100 150 13 15 17 0 1.0 2.0 3.0 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS CHARACTERISTICS (TYPICAL) toff VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 102 VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 100 tc(off) tc(on) 10-1 101 103 SWITCHING ENERGY, PSW(on), PSW(off), (mJ/PULSE) SWITCHING TIMES, tc(on), tc(off), (µs) 101 102 103 102 PSW(off) 101 PSW(on) PSW(off) 100 VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 10-1 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) DIODE FORWARD CHARACTERISTICS CIRCUIT CURRENT VS. CARRIER FREQUENCY trr VCC = 600V VD = 15V Inductive Load Tj = 25°C Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 101 100 103 VD = 15V Tj = 25°C 101 VD = 15V VCIN = 15V Tj = 25°C Tj = 125°C 100 CIRCUIT CURRENT, ID, (mA) 102 Irr 150 102 EMITTER CURRENT, IE, (AMPERES) 103 100 10-2 101 30 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 101 10-1 13 60 CONTROL SUPPLY VOLTAGE, VD, (VOLTS) ton 10-1 101 15 VD = 17V 0 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 100 Tj = 25oC VCIN = 0V COLLECTOR CURRENT, IC, (AMPERES) 101 SWITCHING TIMES, ton, toff, (µs) 90 2.0 0 REVERSE RECOVERY TIME, trr, (µs) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT, IC, (AMPERES) 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(SAT), (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE(SAT), (VOLTS) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 100 N-SIDE 50 P-SIDE 0 0 1.0 2.0 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 0 10 20 30 CARRIER FREQUENCY, fC, (kHz) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) Tj = 25°C 1.0 0.8 0 13 15 17 1.2 1.2 1.0 1.0 0.8 0.8 VD = 15V 0 -60 CONTROL SUPPLY VOLTAGE, VD, (VOLTS) VD = 15V UVt UVr 13 11 100 JUNCTION TEMPERATURE, Tj, (°C) 100 180 180 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.25°C/W 10-2 10-1 TIME, (s) 100 100 180 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) 101 10-3 10-3 20 JUNCTION TEMPERATURE, Tj, (°C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION TRIP RESET LEVEL, UVt, UVr, (VOLTS) 15 20 20 VD = 15V 0 -60 JUNCTION TEMPERATURE, Tj, (°C) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) 0 -60 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) 10 1 TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 0 OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY (TYPICAL) FAULT OUTPUT PULSE WIDTH TRIP LEVEL, tFO (Tj = 25°C) = 1.0 1.2 SHORT CIRCUIT CURRENT TRIP LEVEL, (Tj = 25°C) = 1.0 SHORT CIRCUIT CURRENT TRIP LEVEL, (VD = 15V) = 1.0 FLAT-BASE TYPE INSULATED PACKAGE 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.51°C/W 10-3 10-3 10-2 10-1 100 10 1 TIME, (s) Sep.1998