MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2H • • • • • IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor controllers, NC equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 127 7.5 21 7.5 21 7.5 16.5 19 28.5 21.5 28.5 2–φ5.5 P BuP EuP BvP EvP BwP EwP W N BuN EuN BvN EvN BwN EwN 98 BvP BwP EuP EvP EwP 56 V 40 U 18 25 P BuP V U W BuN BvN BwN EuN N EvN EwN 110 25.6 LABEL 17.5 26.5 Tab#110, t=0.5 Tab#250, t=0.8 Note: All Transistor Units are 3-Stage Darlingtons. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A –IC Collector reverse current DC (forward diode current) 30 A PC Collector dissipation TC=25°C 310 W IB Base current DC 2 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 300 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Parameter Symbol Conditions Charged part to case, AC for 1 minute — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N·m 15~20 kg·cm 500 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V — — 200 mA VCE (sat) Collector-emitter saturation voltage — — 2.5 V VBE (sat) Base-emitter saturation voltage — — 3.5 V –VCEO Collector-emitter reverse voltage –IC=30A (diode forward voltage) — — 1.8 V hFE DC current gain IC=30A, VCE=2.8V/5V 75/100 — — — — — 2.5 µs Switching time VCC=600V, IC=30A, IB1=–IB2=0.6A — — 15 µs — — 3.0 µs Transistor part (per 1/6 module) — — 0.4 °C/ W Diode part (per 1/6 module) — — 1.5 °C/ W Conductive grease applied (per 1/6 module) — — 0.2 °C/ W IC=30A, IB=0.6A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 100 DC CURRENT GAIN hFE 80 60 IB=2A 40 IB=1A IB=0.5A IB=0.3A 20 0 IB=0.1A 0 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE 10 0 7 5 4 3 2 2.0 2.4 2.8 BASE-EMITTER VOLTAGE 10 2 7 5 4 3 2 3.2 3.6 101 7 5 4 3 2 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 0 7 5 4 3 2 VBE(sat) VCE(sat) IB=0.6A Tj=25°C Tj=125°C 10–1 10 0 VBE (V) 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 IC=15A 4 IC=30A 3 IC=5A 2 1 Tj=25°C Tj=125°C 2 3 4 5 7 10 –1 ton, ts, tf (µs) 5 SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj=25°C Tj=125°C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 0 10 –2 VCE=2.8V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=2.8V Tj=25°C 10 –1 1.6 VCE=5.0V VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 3 7 5 4 3 2 10 1 10 0 5.0 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 2 3 4 5 7 10 0 BASE CURRENT IB (A) 10 1 7 5 4 3 2 ts VCC=600V IB1=–IB2=0.6A 10 0 7 5 4 3 2 10 0 tf ton Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 80 3 VCC=600V IB1=0.6A IC=30A ts 10 1 7 5 4 3 2 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) 2 tf 10 0 7 5 4 3 10–1 Tj=25°C Tj=125°C 2 3 4 5 7 10 0 Tj=125°C 60 IB2=–1A 40 20 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT –IB2 (A) DERATING FACTOR OF F. B. S. O. A. 50µS 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) DERATING FACTOR (%) 10 0 7 5 3 TC=25°C 2 NON–REPETITIVE 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) C 10 1 7 5 3 2 SECOND BREAKDOWN AREA 90 100µS µS 500 S D COLLECTOR CURRENT IC (A) VCE (V) 100 1m COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 200 400 600 800 1000 1200 1400 1600 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 0 TC (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 2 10 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 Tj=25°C Tj=125°C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM30TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 3 2 10 2 Tj=25°C Tj=125°C Irr 10 1 trr (µs) 500 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 Qrr 10 0 7 5 3 VCC=600V 2 trr IB1=–IB2=0.6A –1 10 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 Zth (j–c) (°C/ W) 1.6 1.2 0.8 0.4 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 0 TIME (s) Feb.1999