MITSUBISHI TRANSISTOR MODULES QM10HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10HA-HB • • • • • IC Collector current .......................... 10A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, Welders, NC equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm C 3.7 7.0 A φ4.2±0.1 B E 6.35 6.35 LABEL 30.2 19.5MAX. 16.6 0.8 φ2.4 φ1.7 39.0MAX. φ1.7 φ2.4 4.75 6.35 4.75 Fig. A Fig. B 0.8 B 3.2 9.0MAX. 24.0MAX. 0.5 φ1.3 φ2.0 R2.1±0.05 0.4 4.2 0.4 24.0MAX. Feb.1999 MITSUBISHI TRANSISTOR MODULES QM10HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Parameter Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 10 A –IC Collector reverse current DC (forward diode current) 83 A PC Collector dissipation TC=25°C 1 W IB Base current DC 10 A –ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 100 A Tj Junction temperature –40~+150 °C Tstg Storage temperature –40~+125 °C Viso Isolation voltage Symbol Conditions Charged part to case, AC for 1 minute — Mounting torque Mounting screw M4 — Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 0.98~1.47 N·m 10~15 kg·cm 25 g (Tj=25°C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V — — 1.0 mA ICBO Collector cutoff current VCB=600V, Emitter open — — 1.0 mA IEBO Emitter cutoff current VEB=7V, Collector open — — 40 mA VCE (sat) Collector-emitter saturation voltage — — 2.0 V VBE (sat) Base-emitter saturation voltage — — 2.5 V –VCEO Collector-emitter reverse voltage IC=–10A (diode forward voltage) — — 1.5 V hFE DC current gain IC=10A, VCE=2.0V 250 — — — — — 1.5 µs Switching time VCC=300V, IC=10A, IB1=60mA, –IB2=200mA — — 10 µs — — 2.0 µs Transistor part — — 1.5 °C/ W Diode part — — 2.5 °C/ W Conductive grease applied — — 0.4 °C/ W IC=10A, IB=40mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM10HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 20 IB=100mA DC CURRENT GAIN hFE IB=60mA 16 IB=40mA 12 IB=20mA 8 IB=10mA 4 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 2.2 BASE-EMITTER VOLTAGE 10 2 7 5 4 3 2 2.6 3.0 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 –1 10 0 2 IC=10A 1 IC=5A 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 BASE CURRENT IB (A) ton, ts, tf (µs) 3 IB=40mA Tj=25°C Tj=125°C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VCE(sat) COLLECTOR CURRENT IC (A) 5 4 2 3 4 5 7 10 2 VBE(sat) VBE (V) Tj=25°C Tj=125°C 2 3 4 5 7 10 1 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) IC=1A Tj=25°C Tj=125°C COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) 10 –1 7 5 4 3 2 1.8 VCE=2.0V VCE (V) 10 0 VCE=2.0V 7 Tj=25°C 5 4 3 2 1.4 VCE=5.0V 10 0 5 COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 –2 1.0 10 3 7 5 4 3 2 10 1 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25°C 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 –1 10 0 VCC=300V IB1=60mA IB2=–200mA ts tf Tj=25°C Tj=125°C ton 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM10HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 10 2 7 5 3 2 REVERSE BIAS SAFE OPERATING AREA 20 VCC=300V IB1=60mA IC=10A Tj=25°C Tj=125°C 10 1 7 5 3 2 ts 10 0 7 5 3 2 10 –1 10 –1 tf 2 3 4 5 7 10 0 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (µs) SWITCHING TIME VS. BASE CURRENT (TYPICAL) BASE REVERSE CURRENT –IB2 (A) 8 4 200 400 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 SECOND BREAKDOWN AREA 100µs 50µs 200µs 1ms 500ms DC 10 0 7 5 3 TC=25°C 2 NON–REPETITIVE 10 –1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2 3 5 7 10 2 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) DERATING FACTOR (%) 90 COLLECTOR-EMITTER VOLTAGE Zth (j–c) (°C/ W) 0 DERATING FACTOR OF F. B. S. O. A. 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT –IC (A) COLLECTOR CURRENT IC (A) 10 1 7 5 3 2 IB2=–2.0A 12 FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 IB2=–0.5A 16 0 2 3 4 5 7 10 1 Tj=125°C 10 2 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 10 1 7 5 4 3 2 10 0 TC (°C) 0.4 Tj=25°C Tj=125°C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM10HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 1 7 5 4 3 2 Irr Qrr 10 0 7 5 4 3 2 10 –1 10 0 10 0 7 5 4 VCC=300V 3 IB1=60mA IB2=–200mA 2 Tj=25°C Tj=125°C 10 –1 2 3 4 5 7 10 2 trr 2 3 4 5 7 10 1 10 1 7 5 4 3 2 trr (µs) 100 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 7 Zth (j–c) (°C/ W) 3.0 2.0 1.0 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999