MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 FEATURES High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ. APPLICATION 1.5+/-0.1 1.6+/-0.1 φ 1 2 1.5+/-0.1 3.9+/-0.3 DESCRIPTION 1 0. 3 0.4 +0.03 -0.05 1.5+/-0.1 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.1 MAX Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm RoHS COMPLIANT RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Channel Temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 30 V Vds=0V +/-10 V Tc=25°C 3.6 W Zg=Zl=50Ω 60 mW 600 mA °C 150 -40 to +125 °C °C/W Junction to case 34.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS Vth Pout ηD Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=7.2V, Pin=30mW f=520MHz,Idq=100mA MIN 1 0.8 50 LIMITS TYP 1.8 1.4 65 UNIT MAX 50 1 3 - uA uA V W % Note : Above parameters , ratings , limits and conditions are subject to change. RD01MUS1 MITSUBISHI ELECTRIC 1/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) On PCB(*1) with Heat-sink 2 1 On PCB(*1) 0.6 0.4 0.2 0.0 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Vds-Ids CHARACTERISTICS Vgs=10V Vgs=9V Vgs=8V Ta=+25°C 2 Vgs=7V Vgs=5V 1 Ciss(pF) Ids(A) Vgs=6V 1.5 Vgs=4V 0.5 Vgs=3V 0 0 2 4 6 Vds(V) 8 20 18 16 14 12 10 8 6 4 2 0 4 5 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 4 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 3 Crss(pF) Coss(pF) 2 3 Vgs(V) Ta=+25°C f=1MHz 0 10 Vds VS. Coss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 1 Vds VS. Ciss CHARACTERISTICS 2.5 2 1 0 0 RD01MUS1 Ta=+25°C Vds=10V 0.8 3 Ids(A) CHANNEL DISSIPATION Pch(W) 4 Vgs-Ids CHARACTERISTICS 1.0 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 2/6 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Pin-Po CHARACTERISTICS Po Gp 25 1.6 80 70 15 60 10 50 Ta=+25°C f=520MHz Vdd=7.2V Idq=100mA 5 0 -10 ηd(%) ηｄ 20 40 10 80 1.4 ηd 1.2 60 1.0 0.8 40 Ta=25°C f=520MHz Vdd=7.2V Idq=100mA 0.6 Idd 0.4 20 0.2 0.0 30 0 100 Po 1.8 90 Pout(W) , Idd(A) 30 Po(dBm) , Gp(dB) , Idd(A) 2.0 100 ηd(%) 35 20 0 0 Pin(dBm) 20 40 60 Pin(mW) Vdd-Po CHARACTERISTICS 4.0 0.8 Ta=25°C f=520MHz Pin=30mW Idq=100mA Zg=ZI=50 ohm 3.0 0.6 2.5 Po(W) 0.7 0.5 Idd 2.0 0.4 1.5 0.3 1.0 0.2 0.5 0.1 0.0 0.0 4 RD01MUS1 Idd(A) 3.5 Po 6 8 10 Vdd(V) 12 14 MITSUBISHI ELECTRIC 3/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W TEST CIRCUIT(f=520MHz) Vgg Vdd C1 10uF,50V C2 11m m 18m m 68pF 5m m RD 01MUS1 4.7kO HM 4m m 30m m 6.5m m L1 4m m 5.5m m 13m m R F-IN 17.5m m 25.5m m 4m m RF-O UT 3m m 62pF 68O HM 3pF 24pF 62pF 10pF 240pF L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D Note:Board m aterial-glass epoxi substrate C 1,C2: 1000pF,0.022uF in parallel Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 520MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W Zin* =3.11+j11.56 Zout*=11.64+j4.74 520MHz Zin* 520MHz Zout* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance RD01MUS1 MITSUBISHI ELECTRIC 4/6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.927 0.875 0.833 0.811 0.798 0.791 0.790 0.788 0.794 0.796 0.798 0.801 0.807 0.813 0.817 0.825 0.831 0.837 0.845 0.851 0.857 0.862 (ang) -77.0 -101.2 -117.9 -129.5 -138.0 -144.5 -149.7 -154.1 -158.0 -159.2 -161.2 -164.2 -167.0 -169.3 -171.6 -174.0 -176.0 -178.0 -179.9 178.2 176.5 174.7 S21 (mag) (ang) 19.536 132.3 15.657 116.5 12.662 105.0 10.427 96.2 8.814 89.3 7.548 83.3 6.541 78.2 5.789 73.5 5.106 69.0 4.876 67.5 4.576 65.2 4.120 61.3 3.714 58.0 3.389 54.7 3.092 51.3 2.820 48.6 2.616 46.0 2.401 42.8 2.207 40.9 2.076 38.4 1.912 35.5 1.773 34.0 S12 (mag) 0.043 0.050 0.053 0.054 0.053 0.052 0.051 0.049 0.047 0.046 0.045 0.043 0.041 0.039 0.036 0.033 0.031 0.028 0.026 0.023 0.021 0.018 S22 (ang) 41.3 26.5 16.1 8.4 2.6 -2.4 -6.6 -9.9 -13.3 -14.1 -15.8 -18.5 -21.0 -22.3 -24.9 -25.7 -26.8 -27.8 -27.3 -27.0 -26.3 -23.8 (mag) 0.772 0.687 0.630 0.600 0.588 0.583 0.590 0.597 0.608 0.615 0.622 0.636 0.650 0.666 0.680 0.694 0.711 0.723 0.734 0.749 0.760 0.771 (ang) -63.0 -83.1 -97.3 -107.1 -114.4 -120.1 -124.6 -128.4 -131.7 -133.1 -134.8 -137.3 -140.1 -142.4 -144.6 -146.8 -148.8 -150.9 -152.9 -154.5 -156.3 -158.2 RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA) Freq. [MHz] 100 150 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD01MUS1 S11 (mag) 0.945 0.896 0.856 0.833 0.819 0.810 0.806 0.804 0.808 0.809 0.812 0.813 0.819 0.824 0.827 0.834 0.841 0.845 0.852 0.857 0.864 0.868 (ang) -72.3 -96.7 -113.9 -126.2 -135.1 -141.9 -147.7 -152.2 -156.4 -157.8 -159.9 -163.0 -166.0 -168.6 -171.0 -173.3 -175.5 -177.4 -179.4 178.6 176.9 175.0 S21 (mag) (ang) 19.517 135.2 15.937 119.5 13.050 107.7 10.830 98.6 9.194 91.6 7.890 85.3 6.868 80.1 6.084 75.3 5.382 70.7 5.139 69.1 4.831 66.7 4.356 62.7 3.931 59.3 3.597 56.0 3.283 52.4 2.991 49.8 2.779 47.1 2.554 43.8 2.350 41.9 2.209 39.4 2.035 36.3 1.889 34.8 S12 (mag) 0.039 0.046 0.049 0.050 0.050 0.049 0.047 0.046 0.044 0.044 0.042 0.040 0.038 0.036 0.034 0.031 0.029 0.026 0.024 0.022 0.019 0.017 MITSUBISHI ELECTRIC 5/6 S22 (ang) 44.5 29.2 18.5 11.2 5.0 -0.3 -4.2 -7.7 -11.0 -12.4 -13.7 -16.2 -18.7 -20.8 -22.3 -23.7 -24.6 -25.9 -25.4 -24.3 -23.5 -20.1 (mag) 0.742 0.665 0.612 0.581 0.568 0.565 0.571 0.580 0.591 0.596 0.605 0.618 0.633 0.649 0.664 0.678 0.695 0.708 0.720 0.736 0.747 0.759 (ang) -57.4 -76.6 -90.6 -100.4 -107.8 -113.8 -118.5 -122.3 -126.1 -127.5 -129.4 -132.2 -135.1 -137.6 -140.1 -142.5 -144.5 -146.7 -148.9 -150.7 -152.4 -154.6 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD01MUS1 MITSUBISHI ELECTRIC 6/6 10 Jan 2006