MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD07MVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. 2.0+/-0.05 2 0.2+/-0.05 For output stage of high power amplifiers in VHF/UHF band mobile radio sets. RoHS COMPLIANT 0.9+/-0.1 INDEX MARK (Gate) (0.25) Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RD07MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD07MVS1 MITSUBISHI ELECTRIC 1/9 10 Jan 2006 (0.22) 3 (0.25) APPLICATION 3.5+/-0.05 1.0+/-0.05 High power gain: Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz High Efficiency: 60%typ. (175MHz) High Efficiency: 55%typ. (520MHz) 4.9+/-0.15 1 FEATURES MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 30 +/- 20 50 1.5 3 150 -40 to +125 2.5 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout1 ηD1 Pout2 ηD2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(Pin Control) f=175MHz,Idq=700mA,Zg=50Ω Load VSWR=20:1(All Phase) VDD=9.2V,Po=7W(Pin Control) f=520MHz,Idq=750mA,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.4 7 55 7 50 LIMITS TYP MAX. 200 1 1.7 2.4 8 60 8 55 No destroy No destroy UNIT uA uA V W % W % - - Note : Above parameters , ratings , limits and conditions are subject to change. RD07MVS1 MITSUBISHI ELECTRIC 2/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Ta=+25°C Vds=10V *1:The material of the PCB Glass epoxy (t=0.6 mm) 50 8.0 40 Ids(A),GM(S) CHANNEL DISSIPATION Pch(W) 60 Vgs-Ids CHARACTERISTICS 10.0 On PCB(*1) with Heat-sink 30 20 6.0 4.0 On PCB(*1) 0.0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 200 0 Vds-Ids CHARACTERISTICS 2 3 Vgs(V) 4 5 160 9 Vgs=5V Ta=+25°C 120 6 Vgs=4V 5 4 Ciss(pF) Vgs=4.5V 7 Ta=+25°C f=1MHz 140 8 Ids(A) 1 Vds VS. Ciss CHARACTERISTICS 10 100 80 60 Vgs=3.5V 3 40 2 20 Vgs=3V 1 0 0 0 2 4 6 Vds(V) 8 0 10 Vds VS. Coss CHARACTERISTICS 5 10 Vds(V) 15 20 Vds VS. Crss CHARACTERISTICS 20 120 Ta=+25°C f=1MHz 18 Ta=+25°C f=1MHz 100 16 14 Crss(pF) 80 Coss(pF) GM 2.0 10 0 60 40 12 10 8 6 4 20 2 0 0 0 RD07MVS1 Ids 5 10 Vds(V) 15 20 0 MITSUBISHI ELECTRIC 3/9 5 10 Vds(V) 15 20 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz Pin-Po CHARACTERISTICS @f=175MHz 12.0 Gp 20 40 10 20 0 5 4.0 Idd Ta=25°C f=175MHz Vdd=7.2V Idq=700mA 60 40 0.0 10 15 20 25 30 Pin(dBm) 0 Pin-Po CHARACTERISTICS @f=520MHz 20 1000 500 Pin(mW) Pin-Po CHARACTERISTICS @f=520MHz 14.0 60 ηｄ Gp 20 40 20 10 5 10.0 8.0 70 6.0 4.0 Idd 6 Po 5 3 10 2 5 0 RD07MVS1 6 8 10 Vdd(V) 12 0.5 1.0 1.5 2.0 Pin(W) 2.5 3.0 14 5 Ta=25°C f=520MHz Pin=0.7W Icq=750mA Zg=ZI=50 ohm 20 4 Idd 15 4 25 Po(W) Po(W) 20 50 Vdd-Po CHARACTERISTICS @f=520MHz Idd(A) 25 60 30 0.0 10 15 20 25 30 35 Pin(dBm) Ta=25°C f=175MHz Pin=0.3W Icq=700mA Zg=ZI=50 ohm Ta=25°C f=520MHz Vdd=7.2V Idq=750mA 40 Vdd-Po CHARACTERISTICS @f=175MHz 30 80 ηd 0.0 0 0 90 2.0 Ｉｄｄ 0 100 Po 12.0 Pout(W) , Idd(A) Po(dBm) , Gp(dB) , Idd(A) 30 80 Po ηd(%) Ta=+25°C f=520MHz Vdd=7.2V Idq=750mA 40 ηd(%) 0 6.0 15 Po 4 Idd 3 10 2 1 5 1 0 0 Idd(A) -5 80 ηd 8.0 2.0 Ｉｄｄ 0 Po ηd(%) 60 ηｄ 100 10.0 Pout(W) , Idd(A) Po(dBm) , Gp(dB) , Idd(A) 30 80 Po ηd(%) Ta=+25°C f=175MHz Vdd=7.2V Idq=700mA 40 0 4 MITSUBISHI ELECTRIC 4/9 6 8 10 Vdd(V) 12 14 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTORISTICS 2 10 +25°C Vds=10V Tc=-25~+75°C 8 Ids(A),GM(S) -25°C +75°C 6 4 2 0 0 RD07MVS1 1 2 3 Vgs(V) 4 5 MITSUBISHI ELECTRIC 5/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W TEST CIRCUIT(f=175MHz) Vgg Vdd W 19m m 19.5m m 24.5m m 10uF,50V W R D 07MVS1 175MHz 4.7kO HM R F-in C2 19m m C1 22pF L 6.5m m 28.5m m 1m m 11.5m m 3m m 10m m 3.5m m 11.5m m 5m m 62pF 5m m 62pF R F-out 68O HM 140pF 100pF 56pF 16pF 22pF 180pF L: Enam eled wire 7Turns,D:0.43m m ,2.46m m O .D Note:Board m aterial- Teflon substrate C1,C2:1000pF,0.022uF in parallel Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m W :line width=1.0m m TEST CIRCUIT(f=520MHz) Vgg Vdd C1 W 19m m 4.7kO HM RF-in 46m m 20pF RD07MVS1 520MHz 3.5m m 3.5m m 44.5m m RF-out 3.5m m 68pF 68pF 37pF 20pF 10pF L: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D C 1,C 2:1000pF,0.022uF in parallel 10uF,50V L 6.5m m 6.5m m 9m m C2 19m m W 6pF 18pF Note:Board m aterial- Teflon substrate Micro strip line width=2.2m m /50O HM,er:2.7,t=0.8m m W :ine width=1.0m m RD07MVS1 MITSUBISHI ELECTRIC 6/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=10Ω Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 175MHz Zout* 520MHz Zin* Zout* Zo=10Ω Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W Zin*=0.76+j0.06 Zout*=1.61-j0.52 Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zin* 520MHz Zout* RD07MVS1 MITSUBISHI ELECTRIC 7/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD07MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W RD07MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.890 0.897 0.899 0.901 0.907 0.913 0.918 0.924 0.928 0.933 0.935 0.937 0.940 0.942 0.944 0.947 0.948 0.949 0.951 0.951 0.952 0.950 0.952 S21 (ang) -174.1 -175.6 -176.0 -176.3 -176.7 -177.0 -177.3 -177.8 -178.0 -178.3 -178.5 -178.8 -179.2 -179.4 -179.8 179.8 179.4 179.0 178.6 178.2 177.9 177.4 176.9 (mag) 5.508 3.613 3.028 2.604 2.019 1.614 1.308 1.102 0.929 0.790 0.753 0.692 0.595 0.529 0.467 0.416 0.374 0.343 0.304 0.284 0.262 0.234 0.226 S12 (ang) 82.1 75.0 72.4 70.1 65.6 60.7 57.1 54.1 50.1 48.6 47.6 45.3 43.6 42.4 40.2 39.4 38.6 37.6 36.5 37.6 35.1 36.0 35.8 (mag) 0.016 0.015 0.015 0.014 0.014 0.012 0.011 0.010 0.009 0.008 0.007 0.007 0.006 0.006 0.005 0.005 0.004 0.005 0.005 0.006 0.007 0.008 0.009 S22 (ang) -3.6 -8.5 -9.6 -10.9 -12.7 -15.3 -15.8 -14.2 -14.8 -9.6 -7.7 -5.6 0.4 17.1 21.8 40.9 52.0 67.1 72.6 85.8 85.1 89.8 93.4 (mag) 0.790 0.801 0.802 0.815 0.844 0.843 0.860 0.879 0.882 0.895 0.901 0.906 0.907 0.916 0.923 0.921 0.930 0.933 0.932 0.937 0.938 0.938 0.940 (ang) -172.8 -174.0 -174.1 -174.0 -174.1 -174.1 -174.4 -175.0 -175.1 -175.5 -175.8 -176.2 -176.6 -177.2 -177.6 -178.0 -178.8 -178.9 -179.3 179.8 179.7 179.3 178.2 RD07MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD07MVS1 S11 (mag) 0.883 0.891 0.894 0.897 0.906 0.914 0.920 0.927 0.932 0.937 0.938 0.940 0.944 0.946 0.948 0.950 0.951 0.953 0.954 0.954 0.954 0.952 0.954 S21 (ang) -172.1 -174.1 -174.6 -175.0 -175.6 -176.0 -176.4 -177.0 -177.4 -177.8 -178.0 -178.3 -178.8 -179.1 -179.5 -179.9 179.6 179.2 178.8 178.4 178.0 177.5 177.0 (mag) 6.013 3.914 3.269 2.798 2.144 1.697 1.361 1.134 0.949 0.800 0.761 0.697 0.594 0.527 0.464 0.412 0.368 0.336 0.297 0.276 0.254 0.226 0.219 S12 (ang) 81.0 72.8 69.8 67.2 62.1 56.9 53.0 49.9 45.8 44.2 43.2 41.1 39.3 38.2 36.1 35.5 34.5 33.6 32.3 33.8 31.1 32.2 32.0 (mag) 0.017 0.016 0.016 0.015 0.014 0.012 0.011 0.010 0.009 0.007 0.007 0.006 0.005 0.004 0.004 0.004 0.004 0.004 0.005 0.006 0.006 0.007 0.008 MITSUBISHI ELECTRIC 8/9 S22 (ang) -5.3 -10.7 -13.1 -14.9 -18.3 -20.4 -21.6 -21.2 -21.8 -16.9 -16.0 -13.3 -7.2 4.5 17.4 28.0 56.9 66.4 78.3 87.4 90.9 94.7 98.0 (mag) 0.748 0.765 0.769 0.786 0.822 0.828 0.848 0.871 0.876 0.892 0.898 0.904 0.906 0.917 0.924 0.922 0.931 0.934 0.933 0.939 0.941 0.940 0.943 (ang) -170.4 -171.4 -171.4 -171.3 -171.4 -171.6 -172.0 -172.9 -173.2 -173.7 -174.1 -174.6 -175.1 -175.9 -176.3 -176.9 -177.8 -178.0 -178.3 -179.4 -179.5 -179.9 178.9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD07MVS1 MITSUBISHI ELECTRIC 9/9 10 Jan 2006