MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 7.0+/-0.5 11.0+/-0.3 2 9.6+/-0.3 •High power and High Gain: Pout>70W, Gp>13dB @Vdd=12.5V,f=30MHz •High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 +0.05 0.1 -0.01 R1.6+/-0.15 3 APPLICATION 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. 6.2+/-0.7 18.5+/-0.3 3.3+/-0.2 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 50 +/-20 150 5 20 175 -40 to +175 1.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25deg.C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=30MHz ,VDD=12.5V Pin=3.5W,Idq=1.0A VDD=15.2V,Po=70W(Pin Control) f=30MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.5 70 55 LIMITS TYP MAX. 10 1 4.5 80 60 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD70HHF1 MITSUBISHI ELECTRIC 1/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE CHANNEL DISSIPATION Pch(W) 200 Vgs-Ids CHARACTERISTICS 10 8 120 6 Ids(A) 160 80 4 2 40 0 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 Vds-Ids CHARACTERISTICS 8 Vgs=6V 6 Vgs=5.7V 3 4 Vgs(V) 5 6 7 4 Vgs=5.4V Ta=+25°C f=1MHz 250 Ciss(pF) 200 150 100 Vgs=5.1V 2 50 Vgs=4.8V Vgs=4.5V Vgs=4.2V 0 0 2 4 6 Vds(V) 8 0 0 10 10 20 30 Vds(V) Vds VS. Coss CHARACTERISTICS Vds VS. Crss CHARACTERISTICS 500 40 Ta=+25°C f=1MHz Ta=+25°C f=1MHz 400 30 Crss(pF) 300 200 20 10 100 0 0 0 10 20 0 30 Vds(V) RD70HHF1 2 300 Ta=+25°C Ids(A) 1 Vds VS. Ciss CHARACTERISTICS 10 Coss(pF) Ta=+25°C Vds=10V 10 20 30 Vds(V) MITSUBISHI ELECTRIC 2/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W TYPICAL CHARACTERISTICS Po 100 100 80 80 Pout(W) , Idd(A) 40 Ta=+25°C f=30MHz Vdd=12.5V Idq=1A ηｄ Gp 30 60 20 40 10 ηd(%) Po(dBm) , Gp(dB) , Idd(A) 50 Pin-Po CHARACTERISTICS Po 100 80 ηd 60 60 Ta=25°C f=30MHz Vdd=12.5V Idq=1A 40 20 20 0 0 Idd 40 ηd(%) Pin-Po CHARACTERISTICS 20 Ｉｄｄ 0 0 10 20 Pin(dBm) Vdd-Po CHARACTERISTICS 25 8 20 60 15 Idd 40 10 20 5 0 Ids(A) Po(W) 80 Po 30 10 Idd(A) 100 4 6 8 10 Vdd(V) 12 2 3 Pin(W) 4 Vds=10V Tc=-25~+75°C 6 4 +75°C -25°C 2 0 0 2 1 Vgs-Ids CHARACTORISTICS 2 +25°C 120 Ta=25°C f=30MHz Pin=3.5W Idq=1A Zg=ZI=50 ohm 0 0 30 0 14 1 2 3 4 Vgs(V) 5 6 7 Vgs-gm CHARACTORISTICS 6 Vds=10V Tc=-25~+75°C 5 gm(S) 4 3 +25°C 2 1 +75°C -25°C 0 0 RD70HHF1 1 2 3 4 Vgs(V) 5 6 MITSUBISHI ELECTRIC 3/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W TEST CIRCUIT(f=30MHz) Vgg Vdd 330uF,50V C1 L2 C1 10K OHM 33uF,50V 220pF 330 OHM C1 C2 200pF C1 33pF 68pF*3 180pF L1 47pF 330pF L3 Pin Pout 1 OHM 1000pF L4 68pF*3 180pF 220pF 330pF 200pF 16 47pF 33pF 4.5 25 16 20 23 26 78 89 93 43 100 58 61 66 92 100 12 8 C1:100pF, 0.022uF, 0.1uF in parallel C2:470uF*2 in parallel 14 L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire Dimensions:mm L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire Note:Board material-teflon substrate L3:5Turns,I.D6mm,D0.7mm copper wire P=0.5mm L4:1Turns,I.D10mm,D1.6mm silver plateted copper wire micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm RD70HHF1 MITSUBISHI ELECTRIC 4/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=10Ω f=30MHz Zout f=30MHz Zin Zin , Zout f Zin Zout (MHz) (ohm) (ohm) Conditions 30 5.28-j20.08 0.77-j0.22 Po=97W, Vdd=12.5V,Pin=3.5W RD70HHF1 MITSUBISHI ELECTRIC 5/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,70W RD70HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 RD70HHF1 S11 (mag) 0.837 0.838 0.842 0.872 0.899 0.917 0.931 0.941 0.950 0.953 0.957 0.960 0.967 0.967 0.971 0.969 0.970 0.969 0.974 0.973 0.971 0.976 (ang) -155.8 -170.6 -173.0 -174.1 -174.9 -175.9 -176.8 -177.7 -178.6 -179.4 179.9 179.1 178.4 177.7 177.3 176.5 175.6 175.1 174.8 174.0 173.1 172.5 S21 (mag) (ang) 39.860 97.0 13.625 82.2 8.074 75.1 3.731 60.3 2.183 47.0 1.408 38.4 1.010 31.6 0.734 25.1 0.570 21.5 0.455 17.2 0.361 13.3 0.302 11.1 0.254 7.3 0.211 7.4 0.185 5.8 0.162 0.5 0.160 2.7 0.132 1.8 0.122 -4.3 0.117 -5.2 0.100 0.0 0.087 -0.5 S12 (mag) 0.013 0.012 0.012 0.010 0.009 0.007 0.006 0.005 0.004 0.003 0.003 0.001 0.004 0.003 0.006 0.005 0.005 0.007 0.007 0.009 0.011 0.011 MITSUBISHI ELECTRIC 6/7 S22 (ang) 2.0 -8.7 -7.4 -24.2 -41.5 -39.3 -23.3 -46.3 -17.5 29.2 -4.5 105.8 65.8 96.5 71.6 96.8 72.1 81.0 73.6 87.1 77.5 73.8 (mag) 0.776 0.770 0.784 0.824 0.864 0.893 0.931 0.931 0.944 0.964 0.952 0.959 0.966 0.962 0.973 0.969 0.965 0.976 0.970 0.970 0.972 0.972 (ang) -159.3 -171.5 -171.7 -171.3 -173.2 -173.6 -175.3 -176.5 -177.5 -178.6 -179.5 179.4 178.4 178.0 177.0 176.0 175.7 174.6 174.4 174.0 172.7 172.6 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD70HHF1 Silicon MOSFET Power Transistor 30MHz,70W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD70HHF1 MITSUBISHI ELECTRIC 7/7 REV.5 2 APRIL. 2004