FGD4536 360 V PDP Trench IGBT Features General Description • • • • • Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances and PDP TV applications where low conduction and switching losses are essential. High Current Capability Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A High Input Impedance Fast Switching RoHS Compliant Applications • PDP TV, Consumer Appliances C G TO-252/D-PAK E Absolute Maximum Ratings Symbol Description Ratings Unit VCES Collector to Emitter Voltage 360 V VGES Gate to Emitter Voltage 30 V Pulsed Collector Current @ TC = 25oC 220 A Maximum Power Dissipation @ TC = 25oC 125 W IC pulse(1)* PD Maximum Power Dissipation @ TC = 100oC 50 W TJ Operating Junction Temperature -55 to +150 oC Tstg Storage Temperature Range -55 to +150 oC TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds 300 oC Thermal Characteristics Symbol Parameter Typ. Max. Unit RJC(IGBT) Thermal Resistance, Junction to Case - 1.0 oC/W RJA Thermal Resistance, Junction to Ambient - 62.5 oC/W Notes: (1) Half Sine Wave, D < 0.01, pluse width < 1sec * Ic_pluse limited by max Tj ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 1 www.fairchildsemi.com FGD4536 — 360 V PDP Trench IGBT September 2013 Device Marking Device Package Reel Size Tape Width Quantity FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm - FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Unit 360 - - V - 0.4 - V/oC Off Characteristics BVCES TJ Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250 A Temperature Coefficient of Breakdown VGE = 0V, IC = 250 A Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 100 A IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ±400 nA IC = 250 A, VCE = VGE BVCES On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage 2.4 3.3 4.0 V IC = 20 A, VGE = 15 V - 1.19 - V IC = 30 A, VGE = 15 V - 1.33 - V IC = 50 A, VGE = 15 V, TC = 25oC - 1.59 1.8 V IC = 50 A, VGE = 15 V, TC = 125oC - 1.66 - V - 1295 - pF - 56 - pF - 43 - pF - 5 - ns - 20 - ns - 41 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE = 30 V, VGE = 0 V, f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time - 182 - ns td(on) Turn-On Delay Time - 5 - ns tr Rise Time - 21 - ns td(off) Turn-Off Delay Time - 43 - ns tf Fall Time - 249 - ns Qg Total Gate Charge - 47 - nC Qge Gate to Emitter Charge - 5.4 - nC Qgc Gate to Collector Charge - 15 - nC ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 VCC = 200 V, IC = 20 A, RG = 5 , VGE = 15 V, Resistive Load, TC = 25oC VCC = 200 V, IC = 20 A, RG = 5 , VGE = 15 V, Resistive Load, TC = 125oC VCE = 200 V, IC = 20 A, VGE = 15 V 2 www.fairchildsemi.com FGD4536 — 360 V PDP Trench IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics Figure 3. Typical Saturation Voltage Characteristics Figure 4. Transfer Characteristics Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 3 www.fairchildsemi.com FGD4536 — 360 V PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. Case Temperature at Variant Current Level Figure 8. Capacitance Characteristics Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics Fgure 11. Turn-on Characteristics vs. Gate Resistance Figure 12. Turn-off Characteristics vs. Gate Resistance ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 4 www.fairchildsemi.com FGD4536 — 360 V PDP Trench IGBT Typical Performance Characteristics Figure 13. Turn-on Characteristics vs. Collector Current Figure 14. Turn-off Characteristics vs. Collector Current Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current Figure 17. Turn off Switching SOA Characteristics ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 5 www.fairchildsemi.com FGD4536 — 360 V PDP Trench IGBT Typical Performance Characteristics FGD4536 — 360 V PDP Trench IGBT Typical Performance Characteristics Figure 18.Transient Thermal Impedance of IGBT PDM t1 ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 6 t2 www.fairchildsemi.com FGD4536 — 360 V PDP Trench IGBT Mechanical Dimensions Figure 19. TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003. Dimensions in Millimeters ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 Fairchild Semiconductor Corporation FGD4536 Rev. C1 8 www.fairchildsemi.com FGD4536 — 360 V PDP Trench IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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