Order this document by 2N5087/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50 Vdc Emitter – Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 50 — Vdc Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CBO 50 — Vdc Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ICBO — 50 nAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO — 50 nAdc Characteristic OFF CHARACTERISTICS 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces 2N5086/D) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 250 250 250 800 — — Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) hFE — Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.3 Vdc Base – Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) — 0.85 Vdc fT 40 — MHz Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb — 4.0 pF Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hfe 250 900 Noise Figure (IC = 20 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) (IC = 100 µAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz) NF — — 2.0 2.0 SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) — dB 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5087 TYPICAL NOISE CHARACTERISTICS (VCE = – 5.0 Vdc, TA = 25°C) ā 10 7.0 IC = 10 µA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 µA 3.0 100 µA 300 µA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 µA 1.0 0.7 0.5 100 µA 30 µA 0.3 0.2 1.0 10 µA 0.1 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 10 k 20 50 Figure 1. Noise Voltage 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k Figure 2. Noise Current NOISE FIGURE CONTOURS (VCE = – 5.0 Vdc, TA = 25°C) 1.0 M 500 k BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 20 k 10 k 0.5 dB 5.0 k 1.0 dB 2.0 k 1.0 k 500 2.0 dB 3.0 dB 200 100 RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) ā 1.0 M 500 k 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 20 k 10 k RS , SOURCE RESISTANCE (OHMS) 0.5 dB 5.0 k 1.0 dB 2.0 k 1.0 k 500 2.0 dB 3.0 dB 200 100 500 700 1.0 k 5.0 dB 10 Figure 3. Narrow Band, 100 Hz 1.0 M 500 k BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1.0 k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200 k 100 k 50 k ƪ Noise Figure is Defined as: 20 k 10 k NF 0.5 dB 5.0 k 2.0 k 1.0 k 500 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 ƫ 2 2 1ń2 S ) In RS + 20 log10 en2 ) 4KTR 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 500 700 1.0 k IC, COLLECTOR CURRENT (µA) Figure 5. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 2N5087 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 – 55°C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 200 µA 150 µA 40 100 µA 50 µA 20 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages 4 40 Figure 8. Collector Characteristics 1.4 0.2 250 µA 60 Figure 7. Collector Saturation Region 0.1 IB = 400 µA 350 µA 50 100 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 25°C to 125°C 0 – 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 qVB for VBE 0.2 – 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 10. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 ts 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 100 70 50 tf 30 td @ VBE(off) = 0.5 V 20 2.0 3.0 50 70 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 10 –1.0 100 – 2.0 – 3.0 – 5.0 – 7.0 –10 – 20 – 30 IC, COLLECTOR CURRENT (mA) ā ā ā ā ā – 50 – 70 –100 ā ā ā Figure 12. Turn–Off Time 500 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V 300 Cib C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 11. Turn–On Time 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current–Gain — Bandwidth Product Figure 14. Capacitance 20 3.0 2.0 1.0 0.7 0.5 0.3 hoe, OUTPUT ADMITTANCE (m mhos) 7.0 5.0 0.2 0.1 10 20 50 200 VCE = –10 Vdc f = 1.0 kHz TA = 25°C 10 hie , INPUT IMPEDANCE (k Ω ) VCC = – 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C ā 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 15. Input Impedance Motorola Small–Signal Transistors, FETs and Diodes Device Data 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 16. Output Admittance 5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5087 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 400 200 The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 100 µs 100 TC = 25°C dc 60 1.0 s TA = 25°C 40 dc 20 TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 10 µs 1.0 ms 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.0 40 Figure 18. Active–Region Safe Operating Area 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 V A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10–1 10–2 – 40 – 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569. Figure 19. Typical Collector Leakage Current 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5087 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 7 2N5087 Motorola reserves the right to make changes without further notice to any products herein. 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