MOTOROLA BC16116

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by BC161–16/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
3
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
– 60
Vdc
Collector – Base Voltage
VCBO
– 60
Vdc
Emitter – Base Voltage
VEBO
– 5.0
Vdc
Collector Current — Continuous
IC
– 1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
0.8
4.6
Watts
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
3.7
20
Watts
mW/°C
TJ, Tstg
– 65 to + 200
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
219
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
2
1
CASE 79–04, STYLE 1
TO–39 (TO–205AD)
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
—
—
– 100
– 100
nAdc
µAdc
OFF CHARACTERISTICS
Collector Cutoff Current
(IE = 0, VCES = – 60 Vdc)
(IE = 0, VCES = – 60 Vdc, TAmb = 150°C)
ICES
Collector – Emitter Breakdown Voltage
(IC = – 100 µAdc, IE = 0)
V(BR)CES
– 60
—
Vdc
Collector – Emitter Breakdown Voltage(1)
(IC = – 10 mAdc, IB = 0)
V(BR)CEO
– 60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = – 100 mAdc, IC = 0)
V(BR)EBO
– 5.0
—
Vdc
1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%.
(Replaces BC160–16/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
BC161-16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Symbol
Min
Max
Unit
hFE
100
250
—
VCE(sat)
—
– 1.0
Vdc
VBE(on)
—
– 1.7
Vdc
fT
50
—
MHz
Cib
—
180
pF
Cobo
—
30
pF
Turn–On Time
(IC = – 100 mAdc, IB1 = – 5.0 µAdc)
ton
—
500
ns
Turn–Off Time
(IC = – 100 mAdc, IB1 = IB2 = – 5.0 µAdc)
toff
—
650
ns
Characteristic
ON CHARACTERISTICS
DC Current Gain(1)
(IC = – 100 mAdc, VCE = – 1.0 Vdc)
Collector – Emitter Saturation Voltage(1)
(IC = – 1.0 Adc, IB = – 0.1 Adc)
Base – Emitter Saturation Voltage(1)
(IC = – 1.0 Adc, VCE = – 1.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Gain Bandwidth Product
(IC = – 50 mAdc, VCE = – 10 Vdc, f = 20 MHz)
Input Capacitance
(VEB = – 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
1. Pulsed: Pulse Duration = 300 ms, Duty Cycle = 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
2 < t1 < 500 µs
2 < t2 < 5.0 ns
2 < t3 > 1.0 µs
DUTY CYCLE = 2.0%
– 30 V
+ 2.0 V
0
RC
59 Ω
+ 8.8 V
SCOPE
RC
RB
PULSE WIDTH = 200 ns
RISE TIME ≤ 2.0 ns
DUTY CYCLE ≤ 2.0%
59 Ω
SCOPE
0
200 Ω
–10.85 V
– 30 V
200 Ω
11.2 V
t1
t3
t2
RB
1N916
+ 3.0 V
Figure 1. Turn–On
2
Figure 2. Turn–Off
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC161-16
TRANSIENT CHARACTERISTICS
25°C
100°C
100
10
7.0
5.0
50
Ceb
QT
3.0
20
10
Ccb
5.0
Q, CHARGE (nC)
CAPACITANCE (pF)
30
VCC = – 30 V
IC/IB = 10
2.0
1.0
0.7
0.5
3.0
0.3
2.0
0.2
1.0
– 0.1 – 0.2 – 0.3 – 0.5 – 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20– 30 – 50
REVERSE VOLTAGE (VOLTS)
0.1
– 10
– 100
QA
– 20 – 30 – 50
– 100
– 200 – 300
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitances
100
70
70
IC/IB = 10
20
10
VBE(off) = 2.0 V
VBE(off) = 0 V
30
20
10
7.0
5.0
– 10
VCC = – 30 V
IC/IB = 10
50
t, TIME (ns)
t, TIME (ns)
30
7.0
– 20 – 30
5.0
– 10
– 50 – 70 – 100
– 200 – 300 – 500 – 700 – 1000
IC, COLLECTOR CURRENT (mA)
– 20 – 30
– 50 – 70 – 100
– 200 – 300 – 500 – 700 – 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Delay Time
300
200
200
IB1 = IB2
IC/IB = 10
VCC = – 30 V
IC/IB = 10
IB1 = IB2
100
VCC = – 30 V
100
70
50
Figure 6. Rise Time
ts′ = ts – 1/3 tf
t f , FALL TIME (ns)
t s, STORAGE TIME (ns)
1000
700
500
– 1000
Figure 4. Charge Data
100
50
– 500
30
70
50
30
20
20
10
– 10
– 20 – 30 – 50 – 70 – 100
– 200 – 300 – 500 – 700 – 1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
– 10
– 20 – 30
– 50 – 70 – 100
– 200 – 300 – 500 – 700 – 1000
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
3
BC161-16
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
IC = –1.0 mA, RS = 100
9.0
–100 µA, RS = 680
–10 µA, RS = 7.0 kΩ
7.0
6.0
5.0
RS = OPTIMUM SOURCE RESISTANCE
4.0
3.0
7.0
5.0
4.0
3.0
2.0
1.0
1.0
0.1 0.2 0.3 0.5
1.0
f, FREQUENCY (kHz)
2.0 3.0 5.0
–100 mA
6.0
2.0
0
0.01 0.02 0.03 0.05
–10 mA
8.0
NF, NOISE FIGURE (dB)
8.0
NF, NOISE FIGURE (dB)
9.0
f = 1.0 kHz
IC = –1.0 mA
0
50
10
100
200 300 500 1.0k 2.0k 3.0k 5.0k 10k
RS, SOURCE RESISTANCE (OHMS)
20k 30k 50k
Figure 10. Source Resistance Effects
Figure 9. Frequency Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
This group of graphs illustrates the relationship of the “h” parameters for this series of transistors. To obtain these
curves, 4 units were selected and identified by number - the same units were used to develop curves on each graph.
hie , INPUT IMPEDANCE (k OHMS)
300
200
h fe , CURRENT GAIN
UNIT 4
3
100
2
70
50
1
30
20
15
– 0.1
– 0.2 – 0.3 – 0.5
– 1.0
– 2.0 – 3.0
IC, COLLECTOR CURRENT (mA)
– 5.0
30
20
3
10
2
7.0
5.0
UNIT 1
4
3.0
2.0
1.0
0.7
0.5
0.3
– 0.1
– 10
– 0.2 – 0.3 – 0.5
– 1.0
– 2.0 – 3.0
IC, COLLECTOR CURRENT (mA)
hoe, OUTPUT ADMITTANCE (m mhos)
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
100
70
50
30
20
4
3.0
2.0
1.0
– 0.1
UNIT 1
– 0.2 – 0.3 – 0.5
– 1.0
– 2.0 – 3.0
IC, COLLECTOR CURRENT (mA)
– 5.0
Figure 13. Voltage Feedback Ratio
4
– 10
– 5.0
– 10
Figure 12. Input Impedance
Figure 11. Current Gain
3
10 2
7.0
5.0
– 5.0
– 10
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
– 0.1
4
3
2
UNIT 1
– 0.2 – 0.3 – 0.5
– 1.0
– 2.0 – 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC161-16
hFE , DC CURRENT GAIN (NORMALIZED)
STATIC CHARACTERISTICS
10
7.0
5.0
VCE = –1.0 V
VCE = –10 V
TJ = 175°C
3.0
2.0
1.0
0.7
0.5
25°C
0.3
0.2
0.1
– 1.0
– 2.0
– 3.0
– 5.0
– 55°C
– 7.0
– 10
– 20
– 30
– 50 – 70
IC, COLLECTOR CURRENT (mA)
– 100
– 200
– 300
– 500
– 700 – 1000
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
– 1.0
TJ = 25°C
– 0.8
– 0.6
IC = – 1.0 mA
– 10 mA
– 100 mA
– 500 mA
– 0.4
– 0.2
0
– 0.005 – 0.007 – 0.01
– 0.02 – 0.03 – 0.05 – 0.07 – 0.1
– 0.2 – 0.3
– 0.5 – 0.7 – 1.0
IB, BASE CURRENT (mA)
– 2.0 – 3.0
– 5.0 – 7.0 – 10
– 20 – 30
– 50
– 1.0
+ 1.0
– 0.8
0
VBE(sat) @ IC/IB = 10
– 0.6
VBE(on) @ VCE = –1.0 V
– 0.4
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
Figure 16. Collector Saturation Region
θVC for VCE(sat)
– 1.0
– 2.0
θVB for VBE
– 3.0
– 0.2
VCE(sat) @ IC/IB = 10
0
– 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20 – 30 – 50 – 100 – 200– 300 – 500 – 1000
IC, COLLECTOR CURRENT (mA)
Figure 17. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
– 4.0
– 1.0 – 2.0 – 3.0 – 5.0 – 10 – 20 – 30 – 50 – 100 – 200 – 300 – 500 – 1000
IC, COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
5
BC161-16
RATINGS AND THERMAL DATA
– 3.0
IC, COLLECTOR CURRENT (AMP)
– 2.0
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 19 is based upon TJ(pk) = 200°C; TC is variable
depending upon conditions. Pulse curves are valid for duty cycles
to 10% provided TJ(pk) ≤ 200°C. At high case temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
– 1.0
– 0.5
– 0.3
– 0.2
– 0.1
– 0.07
– 0.05
– 0.03
– 1.0
TJ = 200°C
SECONDARY BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C (SINGLE PULSE)
CURVES APPLY BELOW
RATED VCEO
0.1 ms
1.0 ms
dc
– 2.0 – 3.0 – 5.0 – 7.0 – 10
– 20 – 30 – 50 – 70 – 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 19. Safe Operating Area
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC161-16
PACKAGE DIMENSIONS
–A–
R
B
C
–T–
E
SEATING
PLANE
L
F
K
P
D 3 PL
0.36 (0.014)
M
T A
M
H
M
2
–H–
1
M
J
3
G
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 079–04
(TO–205AD)
ISSUE N
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION J MEASURED FROM DIMENSION A
MAXIMUM.
4. DIMENSION B SHALL NOT VARY MORE THAN
0.25 (0.010) IN ZONE R. THIS ZONE
CONTROLLED FOR AUTOMATIC HANDLING.
5. DIMENSION F APPLIES BETWEEN DIMENSION
P AND L. DIMENSION D APPLIES BETWEEN
DIMENSION L AND K MINIMUM. LEAD
DIAMETER IS UNCONTROLLED IN DIMENSION
P AND BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
P
R
INCHES
MIN
MAX
0.335
0.370
0.305
0.335
0.240
0.260
0.016
0.021
0.009
0.041
0.016
0.019
0.200 BSC
0.028
0.034
0.029
0.045
0.500
0.750
0.250
–––
45 _BSC
–––
0.050
0.100
–––
MILLIMETERS
MIN
MAX
8.51
9.39
7.75
8.50
6.10
6.60
0.41
0.53
0.23
1.04
0.41
0.48
5.08 BSC
0.72
0.86
0.74
1.14
12.70
19.05
6.35
–––
45 _BSC
–––
1.27
2.54
–––
7
BC161-16
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8
◊
BC161–16/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data