Order this document by MPSA20/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage VCBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit RqJA(1) 200 °C/W RqJC 83.3 °C/W Operating and Storage Junction Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Max Unit Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Emitter – Base Breakdown Voltage (IE = 100 µAdc, IC = 0) V(BR)EBO 4.0 — Vdc ICBO — 100 nAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 MPSA20 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit hFE 40 400 — VCE(sat) — 0.25 Vdc fT 125 — MHz Cobo — 4.0 pF ON CHARACTERISTICS DC Current Gain(2) (IC = 5.0 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% 275 +10.9 V + 3.0 V 10 < t1 < 500 µs DUTY CYCLE = 2% t1 +10.9 V 10 k – 0.5 V <1.0 ns 275 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* *Total shunt capacitance of test jig and connectors Figure 1. Turn–On Time 2 Figure 2. Turn–Off Time Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA20 TYPICAL NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 20 100 BANDWIDTH = 1.0 Hz RS = 0 50 300 µA 10 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) IC = 1.0 mA 100 µA 7.0 5.0 10 µA 3.0 20 300 µA 100 µA 10 5.0 2.0 1.0 30 µA 0.5 30 µA BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 10 µA 0.2 2.0 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 10 k 20 50 Figure 3. Noise Voltage 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k Figure 4. Noise Current NOISE FIGURE CONTOURS (VCE = 5.0 Vdc, TA = 25°C) BANDWIDTH = 1.0 Hz 200 k 100 k 50 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 500 k 20 k 10 k 5k 2.0 dB 2k 1k 500 3.0 dB 4.0 dB 6.0 dB 10 dB 200 100 50 1M 500 k BANDWIDTH = 1.0 Hz 200 k 100 k 50 k 20 k 10 k 1.0 dB 5k 2.0 dB 2k 1k 500 5.0 dB 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k 8.0 dB 10 20 Figure 5. Narrow Band, 100 Hz 500 k RS , SOURCE RESISTANCE (OHMS) 3.0 dB 30 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1k Figure 6. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200 k 100 k 50 k ǒ Noise Figure is defined as: 20 k 10 k 5k NF 1.0 dB 2k 1k 500 3.0 dB 5.0 dB 8.0 dB 10 20 30 50 70 100 200 300 500 700 en2 Ǔ ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 2.0 dB 200 100 50 + 20 log10 1k IC, COLLECTOR CURRENT (µA) Figure 7. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPSA20 TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 – 55°C 100 80 MPSA20 VCE = 1.0 V VCE = 10 V 60 40 0.004 0.006 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 MPSA20 TJ = 25°C 0.8 IC = 1.0 mA 0.6 10 mA 50 mA IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 200 µA 40 100 µA 20 0 5.0 10 0 20 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltages 4 40 Figure 10. Collector Characteristics 1.4 0.1 400 µA 60 Figure 9. Collector Saturation Region 0.8 IB = 500 µA 50 100 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 25°C to 125°C 0 *qVC for VCE(sat) – 55°C to 25°C – 0.8 25°C to 125°C – 1.6 qVB for VBE – 2.4 0.1 0.2 – 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 12. Temperature Coefficients Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA20 TYPICAL DYNAMIC CHARACTERISTICS 1000 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 700 500 ts 300 200 t, TIME (ns) t, TIME (ns) 300 200 tr 30 20 td @ VBE(off) = 0.5 Vdc 10 7.0 5.0 100 70 50 tf 30 VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C 20 3.0 1.0 2.0 20 30 5.0 7.0 10 3.0 IC, COLLECTOR CURRENT (mA) 50 70 10 1.0 100 2.0 3.0 500 70 100 10 TJ = 25°C f = 100 MHz TJ = 25°C f = 1.0 MHz 7.0 300 VCE = 20 V 200 5.0 V 100 Cib 5.0 Cob 3.0 2.0 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Current–Gain — Bandwidth Product Figure 16. Capacitance MPSA20 hfe ≈ 200 @ IC = 1.0 mA 7.0 5.0 VCE = 10 Vdc f = 1.0 kHz TA = 25°C 3.0 2.0 1.0 0.7 0.5 0.3 hoe, OUTPUT ADMITTANCE (m mhos) 10 0.2 0.1 10 20 50 200 20 hie , INPUT IMPEDANCE (k Ω ) 50 Figure 14. Turn–Off Time C, CAPACITANCE (pF) f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz) Figure 13. Turn–On Time 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C MPSA20 hfe ≈ 200 @ IC = 1.0 mA 30 20 10 7.0 5.0 3.0 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 17. Input Impedance Motorola Small–Signal Transistors, FETs and Diodes Device Data 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 Figure 18. Output Admittance 5 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) MPSA20 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19A 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 t2 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–569) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k Figure 19. Thermal Response 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA IC, COLLECTOR CURRENT (nA) VCC = 30 Vdc A train of periodical power pulses can be represented by the model as shown in Figure 19A. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 19 was calculated for various duty cycles. To find Z θJA(t), multiply the value obtained from Figure 19 by the steady state value RθJA. 103 102 ICEO 101 Example: Dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2) Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. ICBO AND ICEX @ VBE(off) = 3.0 Vdc 100 10–1 10–2 –4 0 –2 0 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) The peak rise in junction temperature is therefore ∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN–569. Figure 19A. IC, COLLECTOR CURRENT (mA) 400 1.0 ms 200 100 60 40 TC = 25°C dc dc TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 2.0 The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon T J(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 µs 1.0 s TA = 25°C 20 4.0 100 µs 4.0 6.0 8.0 10 20 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40 Figure 20. 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPSA20 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR 7 MPSA20 Motorola reserves the right to make changes without further notice to any products herein. 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